ChemInform Abstract: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors.

Gang Ou,Dongke Li,Wei Pan,Qinghua Zhang,Ben Xu,Lin Gu,Cewen Nan,Hui Wu

DOI: https://doi.org/10.1002/chin.201531007

2015-01-01

ChemInform

Abstract:AbstractThe band gaps of oxide semiconductors including Cu2O, ZnO, Y2O3, ZrO2, Nb2O5, In2O3, SnO2, GeO2, and WO3 are reduced significantly after rapid arc‐melting followed by cooling to room temperature within a few seconds.

What problem does this paper attempt to address?

Arc-Melting To Narrow The Bandgap Of Oxide Semiconductors

Gang Ou,Dongke Li,Wei Pan,Qinghua Zhang,Ben Xu,Lin Gu,Cewen Nan,Hui Wu

DOI: https://doi.org/10.1002/adma.201405763

IF: 29.4

2015-01-01

Advanced Materials

Abstract:The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.
Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (adv. Mater. 16/2015)

Gang Ou,Dongke Li,Wei Pan,Qinghua Zhang,Ben Xu,Lin Gu,Ce‐Wen Nan,Hui Wu

DOI: https://doi.org/10.1002/adma.201570110

IF: 29.4

2015-01-01

Advanced Materials

Abstract:W. Pan, H. Wu, and co-workers highlight engineering the bandgap of oxides through rapid arc-melting on page 2589. Rich defects are implanted by a fast melting and cooling process, resulting in narrowed bandgap and enhanced optical absorption in a series of oxides including ZnO, Y2O3, ZrO2, Nb2O5, In2O3, SnO2, CeO2, Cu2O, and WO3.
Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Jianguo Lv,Zhitao Zhou,Feng Wang,Changlong Liu,Wanbing Gong,Jie-Lin Dai,Xiaoshuang Chen,Gang He,Shiwei Shi,Xiaoguo Song,Zhaoqi Sun,Li Feng

DOI: https://doi.org/10.1016/j.spmi.2013.06.010

IF: 3.22

2013-01-01

Superlattices and Microstructures

Abstract:CuxZn1−xO thin films were prepared by the sol–gel process. Microstructure, surface topography and optical properties were studied by X-ray diffractometry, atom force microscopy, UV–Vis spectrophotometer and fluorescence spectrometer. The monoclinic CuO phase has been observed in CuxZn1−xO (x = 0.05, 0.10, and 0.15) thin films annealed at 800 °C. Preferential c-axis orientation of the CuxZn1−xO thin films annealed at 800 °C increases with the increase of x value. The annealing temperature and CuO component have great effect on the absorption coefficient of CuxZn1−xO thin films in the visible region. The decrease of optical band gap may be attributed to the reduction of the fraction of the amorphous phase and stoichiometry deficiency of ZnO due to CuO doping. The deep level emission in ZnO thin film originates from oxygen vacancy and oxygen interstitial defects. The violet emission peaked at about 400 nm has been assigned to the electron transition from zinc interstitial level and the valence band.
Band-gap reduction of oxides via partial hydrolysis-enhanced carbothermic reaction

Hongkun Li,Jing Zhong,Xinxue Tang,Zebiao Li,Weihui Ou,Binbin Zhou,Chong Wang,Jie Pan,Yingxian Chen,Haikun Wu,Jian Lu,Yang Yang Li

DOI: https://doi.org/10.1016/j.apmt.2023.101864

IF: 8.663

2023-06-29

Applied Materials Today

Abstract:In the realm of metal oxide semiconductors, reducing the bandgap often necessitates the cumbersome process of high-temperature annealing in a controlled atmosphere, such as through the carbothermal reaction. However, we unveil a graceful approach to crafting narrow-gap metal oxides by delicately governing the hydrolysis reaction of metal alkoxides. Through carefully modulated hydrolysis, carbon-based residues nestled within intermolecular confines transform into graphite, nestled beside the metal oxide. This metamorphosis enables the carbothermic reaction to transpire even in the open air at temperate conditions. Diving deeper, theoretical explorations illuminate that oxygen vacancies, introduced by partial hydrolysis, are the driving force behind the color transformation of the oxides and the enhancement of photothermal conversion efficiency. The method presented here, rooted in partial hydrolysis, paves a fresh path for the creation of black metal oxide with tailored charge transition behavior, holding great promise for solar photothermal applications.

materials science, multidisciplinary
Spatial bandgap engineering along single alloy nanowires.

Fuxing Gu,Zongyin Yang,Huakang Yu,Jinyou Xu,Pan Wang,Limin Tong,Anlian Pan

DOI: https://doi.org/10.1021/ja110092a

IF: 15

2011-01-01

Journal of the American Chemical Society

Abstract:Bandgap engineering of semiconductor nano-wires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS1-xSex alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.
ChemInform Abstract: Alloyed Semiconductor Nanocrystals with Broad Tunable Band Gaps.

Daocheng Pan,Ding Weng,Xiaolei Wang,Qiangfeng Xiao,Wei Chen,Chuanlai Xu,Zhengzhong Yang,Yunfeng Lu

DOI: https://doi.org/10.1002/chin.200940023

2009-01-01

ChemInform

Abstract:Nearly monodisperse alloyed (CuInS2)x(ZnS)1−xnanocrystals with cubic and hexagonal phases were successfully synthesized for the first time, and the band gaps of these alloyed nanocrystals can be tuned in the broad range of 1.5 to 3.7 eV by changing the ratio of CuInS2 to ZnS.
Progression of group-III sesquioxides: epitaxy, solubility and desorption

Anna Hassa,Marius Grundmann,Holger von Wenckstern

DOI: https://doi.org/10.1088/1361-6463/abd4a4

2021-03-09

Abstract:Abstract In recent years, ultra-wide bandgap semiconductors have increasingly moved into scientific focus due to their outstanding material properties, making them promising candidates for future applications within high-power electronics or solar-blind photo detectors. The group-III-sesquioxides can appear in various polymorphs, which influences, for instance, the energy of the optical bandgap. In gallium oxide, the optical bandgap ranges between 4.6 and 5.3 eV depending on the polymorph. For each polymorph it can be increased or decreased by alloying with aluminum oxide (8.8 eV) or indium oxide (2.7–3.75 eV), respectively, enabling bandgap engineering and thus leading to an extended application field. For this purpose, an overview of miscibility limits, the variation of bandgap and lattice constants as a function of the alloy composition are reviewed for the rhombohedral, monoclinic, orthorhombic and cubic polymorph. Further, the effect of formation and desorption of volatile suboxides on growth rates is described with respect to chemical trends of the discussed ternary materials.
Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films

Guanguang Zhang,Kuankuan Lu,Xiaochen Zhang,Weijian Yuan,Muyang Shi,Honglong Ning,Ruiqiang Tao,Xianzhe Liu,Rihui Yao,Junbiao Peng

DOI: https://doi.org/10.3390/mi9080377

IF: 3.4

2018-07-30

Micromachines

Abstract:Tungsten trioxide (WO3) is a wide band gap semiconductor material that is used as an important electrochromic layer in electrochromic devices. In this work, the effects of the annealing temperature on the optical band gap of sol-gel WO3 films were investigated. X-ray Diffraction (XRD) showed that WO3 films were amorphous after being annealed at 100 °C, 200 °C and 300 °C, respectively, but became crystallized at 400 °C and 500 °C. An atomic force microscope (AFM) showed that the crystalline WO3 films were rougher than the amorphous WO3 films (annealed at 200 °C and 300 °C). An ultraviolet spectrophotometer showed that the optical band gap of the WO3 films decreased from 3.62 eV to 3.30 eV with the increase in the annealing temperature. When the Li+ was injected into WO3 film in the electrochromic reaction, the optical band gap of the WO3 films decreased. The correlation between the optical band gap and the electrical properties of the WO3 films was found in the electrochromic test by analyzing the change in the response time and the current density. The decrease in the optical band gap demonstrates that the conductivity increases with the corresponding increase in the annealing temperature.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Wide band gap tunability in complex transition metal oxides by site-specific substitution

Woo Seok Choi,Matthew F. Chisholm,David J. Singh,Taekjib Choi,Gerald E. Jellison Jr,Ho Nyung Lee

DOI: https://doi.org/10.1038/ncomms1690

2012-02-22

Abstract:Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications.

Materials Science,Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Factors determining the band gap of a nanocrystalline multicomponent equimolar transition metal based high entropy oxide (Co,Cu,Mg,Ni,Zn)O

Nandhini J. Usharani,P. Arivazhagan,Tiju Thomas,S.S. Bhattacharya

DOI: https://doi.org/10.1016/j.mseb.2022.115847

2022-09-01

Abstract:A recently developed transition metal based high entropy oxide (Co,Cu,Mg,Ni,Zn)O (TM-HEO) with phase-pure rocksalt structure has been shown to have potential for a wide range of applications. In this investigation, the optical band gap of the TM-HEO was studied to understand the influence of each cation by synthesising lower combination compounds by systematically eliminating Co, Cu and Zn. Compared to the other cations, Cu played a more significant role in determining the band gap. The obtained band gaps lay in the range of 1.47 to 3.38 eV, making some of the systems relevant for visible light harvesting. Further, to study the variation of the band gap with defect states and crystallite size, the TM-HEO was synthesised using three bottom-up processes. These studies revealed that the band gaps of the TM-HEOs depended on the variation of the covalent nature and oxidation states of the cations.
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Zeyu Chi,Jacob J. Asher,Michael R. Jennings,Ekaterine Chikoidze,Amador Pérez-Tomás

DOI: https://doi.org/10.3390/ma15031164

IF: 3.4

2022-02-02

Materials

Abstract:Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Who Make Transparent ZnO Colorful? – Ion Implantation and Thermal Annealing Effects

Y. N. Chen,C. C. Zheng,J. Q. Ning,R. X. Wang,C. C. Ling,S. J. Xu

DOI: https://doi.org/10.1016/j.spmi.2016.02.022

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:ZnO has re-attracted considerable interest as a wide band gap semiconductor and energy material in recent years. When most of the near-band-edge exciton sharp lines in the ultraviolet spectral region have been firmly identified, defect origins of broad color emissions are still open to debate. By implanting Cu+ and Zn+ ions into high quality ZnO single crystal, respectively, and investigating their photoluminescence spectra at different temperatures, we firmly show that the structured green emission band is indeed associated with copper impurity. Incorporation of excess Zn ions into ZnO results in a structureless red emission band with a nearly perfect Gaussian lineshape. The pure electronic level locations of these two color emission bands were inclusively determined by using generalized multiple Brownian oscillator model when the simultaneous multiphonon emission was taken into account. The nature of the two colorful luminescent centers, including their charge states, was discussed with the aid of the latest theoretical results on different point defects and their optical transitions in ZnO.
Narrow Band Gap Observed in a Molecular Ferroelastic: Ferrocenium Tetrachloroferrate

Han-Yue Zhang,Chun-Li Hu,Zhao-Bo Hu,Jiang-Gao Mao,You Song,Ren-Gen Xiong

DOI: https://doi.org/10.1021/jacs.9b13446

IF: 15

2020-01-01

Journal of the American Chemical Society

Abstract:Due to the intriguing chemical variability and structure-property flexibility, molecular materials with striking multifunctional characteristics, including tunable physical, chemical, optical, and electronic properties, have aroused wide attention. Recently, great advances have also been made in designing molecular ferroelastics with optoelectronic properties. However, the band gaps of the most typical ferroelastics are far in excess of 2.0 eV, which severely hinder their further applications. And this corresponds to the inherent incompatibility of ferroelastics. Herein we report an organometallic compound, ferrocenium tetrachloroferrate (1), undergoing a ferroelastic phase transition at 407.7 K with a large spontaneous strain of 0.1088. To the best of our knowledge, this is the first molecular ferroelastic with such a high Curie temperature (T-c) and narrow band gap of 1.61 eV. UV-vis absorption spectra and density-functional theory (DFT) calculation confirm this band gap. The band gap of 1 is determined by both the ferrocenium and the tetrachloroferrate components. The ideal semiconducting characteristic makes a breakthrough in the inherent incompatibility with ferroelastics. This will inspire an intriguing and further research in molecular ferroelastics with ideal semiconductor characteristics and hold great potential for the utilization in optoelectronic devices, especially the photovoltaic applications.
Progress of Research on Tuneable Wide-Band-gap Semiconductor MgxZn1-xO Thin Films

LI Chun,FANG Guo-jia,ZHAO Xing-zhong

DOI: https://doi.org/10.3321/j.issn:1001-9731.2005.02.005

2005-01-01

Journal of Functional Biomaterials

Abstract:As a novel ternary compound semiconductor, Mg_xZn_(1-x)O thin films have a unique characteristic of tunable band gap energy which can be continuously adjusted from 3.3eV to 7.8eV with increasing x. Such a wide flexibility induced a variety of applications such as heterojunctions, multiquantum wells, ultraviolet photodetectors, window materials for solar cells, et al. The fabrication techniques, structural and optoelectronic properties and potential applications of Mg_xZn_(1-x)O thin films are summarized in this paper. The development prospects were also discussed.
Reversible Thermochromism to Tune Bandgap of Organic-Inorganic Hybrid Materials

Min Wan,Hao-Ran Chen,Yan-Ning Wang,Ke Shi,Jing-Yuan Liu,Zi-Mu Li,Si-Yu Ye,Jun-Yi Li,Lizhuang Chen

DOI: https://doi.org/10.1039/d2qm00696k

IF: 8.6834

2022-09-06

Materials Chemistry Frontiers

Abstract:Organic-inorganic hybrid halide materials have been gaining tremendous interest due to unique optical, electrical and magnetic properties. However, large bandgap limits their applications. Here, we report a series of organic-inorganic hybrid halide semiconductors, with an exotic and fully reversible thermochromatism, narrow bandgap and near-infrared luminescence. Through precise molecular modification, we successfully adjusted bandgap from 1.910 to 2.120 eV. And then effective temperature-derived bandgap modulation, from 2.120 to 1.590 eV. Changing temperature results in the reversible color between yellow and purple black. The intrinsic bandgap is negligible after repeated heating/cooling cycles, indicating better thermal and environmental stability. Thermochromic behavior of hybrid structures is usually caused by lattice distortion, lattice expansion or ion rearrangement. This work demonstrates that an efficient thermochromism leading to bandgap modulation, and it has great potential in the application of intelligent windows and temperature sensors. In addition, thermochromism induced bandgap narrowing provide new insights for the further of organic-inorganic hybrid halide materials.

materials science, multidisciplinary,chemistry
Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures

M. Zubkins,J. Gabrusenoks,G. Chikvaidze,I. Aulika,J. Butikova,R. Kalendarev,L. Bikse

DOI: https://doi.org/10.1063/5.0028901

2022-11-28

Abstract:Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temperature of approximately -100 oC. New vibration bands at 201, 372, and 473 cm-1 as well as O-H stretch and bend absorption bands in the a-ZnOx films were detected by FTIR spectroscopy. Raman spectra showed characteristic ZnO2 peaks at 386 and 858 cm-1 attributed to the peroxide ion O22- stretching and libration modes, respectively. In addition, the films contain neutral and ionized O2 and O2- species. The a-ZnOx films are highly transparent in the visible light range (approx. 87%) and exhibit a refractive index of 1.68 at 2.25 eV (550 nm). An optical band gaps is 4.65 eV with an additional band edge absorption feature at 3.50 eV. It has been shown that the deposition on actively cooled substrates can be a suitable technique to obtain low temperature phases that cannot be deposited at room temperature.

Materials Science
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

K. M. Yu,W. Walukiewicz,J. Wu,W. Shan,J. W. Beeman,M. A. Scarpulla,O. D. Dubon,P. Becla

DOI: https://doi.org/10.1103/PhysRevLett.91.246403

2003-09-20

Abstract:We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms is replaced with oxygen in a Zn0.88Mn0.12Te crystal (with band gap of 2.32 eV) the resulting band structure consists of two direct band gaps with interband transitions at ~1.77 eV and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model in which the interactions between the oxygen-derived band and the conduction band are considered. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Materials Science
Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (adv. Electron. Mater. 2/2018)

Xu Ji,Liang Chen,Mengxuan Xu,Mei Dong,Kun Yan,Shuang Cheng,Xueqian Kong,Tongyao Wang,Jiandang Liu,Bingchuan Gu,Huanhua Wang,Zhiyong Liu,Shuao Wang,Feng Huang,Xiaoping Ouyang

DOI: https://doi.org/10.1002/aelm.201870010

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:Controllable and repeatable crystal-imperfection-modulation engineering (CIME) is important for the development of semiconductor science and technology. A universal and feasible CIME for ZnO based on creative electrochemical doping and strong oxidizing thermodynamic annealing processes is described by Feng Huang, Xiaoping Ouyang, and co-workers in article number 1700307. Their method could be of major benefit for new wide-band-gap semiconductor devices.
Alloyed Semiconductor Nanocrystals with Broad Tunable Band Gaps

Daocheng Pan,Ding Weng,Xiaolei Wang,Qiangfeng Xiao,Wei Chen,Chuanlai Xu,Zhengzhong Yang,Yunfeng Lu

DOI: https://doi.org/10.1039/b905151a

IF: 4.9

2009-01-01

Chemical Communications

Abstract:Nearly monodisperse alloyed (CuInS2)(x)(ZnS)(1-x) nanocrystals with cubic and hexagonal phases were successfully synthesized for the first time, and the band gaps of these alloyed nanocrystals can be tuned in the broad range of 1.5 to 3.7 eV by changing the ratio of CuInS2 to ZnS.
Structural Properties And Enhanced Bandgap Tunability Of Quaternary Cdznos Epitaxial Films Grown By Pulsed Laser Deposition

Lilan Zheng,Yinyin Lin,Lei Li,Guojin Liang,Mingkai Li,Pai Li,Yunbin He

DOI: https://doi.org/10.1016/j.jallcom.2015.08.049

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Bandgap engineering of ZnO was attempted with isovalent cation and anion co-substitution of Cd for Zn and S for O, respectively. Growth of quaternary CdxZn1-xO1-ySy (CdZnOS) films was realized by pulsed laser deposition using a self-made Cd0.2Zn0.8O0.11S0.89 ceramic target with various O-2 pressures. Single-phase CdxZn1-xO1-ySy alloy films having a wurtzite structure were epitaxially grown on c-plane sapphire substrates with different S contents (0 <= y(s) <= 0.26) and a nearly constant Cd concentration of 5%. Upon decreasing O-2 pressure from 6 to 1.5 Pa, i.e., increasing S content from 0 to 0.26, the optical bandgap of CdxZn1-xO1-ySy films was tuned downward from 3.26 to 2.58 eV. With simultaneous incorporation of certain amount of Cd, the quaternary CdZnOS films exhibit significantly narrower bandgaps than the ternary ZnOS films with the same S content. The synergetic co-substitution of Cd and S leads to considerably extended solid solubility in addition to cumulative bandgap adjustment, eventually resulting in an enhanced bandgap tunability of quaternary CdZnOS. (C) 2015 Elsevier B.V. All rights reserved.

ChemInform Abstract: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors.

Arc-Melting To Narrow The Bandgap Of Oxide Semiconductors

Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (adv. Mater. 16/2015)

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Band-gap reduction of oxides via partial hydrolysis-enhanced carbothermic reaction

Spatial bandgap engineering along single alloy nanowires.

ChemInform Abstract: Alloyed Semiconductor Nanocrystals with Broad Tunable Band Gaps.

Progression of group-III sesquioxides: epitaxy, solubility and desorption

Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films

Wide band gap tunability in complex transition metal oxides by site-specific substitution

Factors determining the band gap of a nanocrystalline multicomponent equimolar transition metal based high entropy oxide (Co,Cu,Mg,Ni,Zn)O

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Who Make Transparent ZnO Colorful? – Ion Implantation and Thermal Annealing Effects

Narrow Band Gap Observed in a Molecular Ferroelastic: Ferrocenium Tetrachloroferrate

Progress of Research on Tuneable Wide-Band-gap Semiconductor MgxZn1-xO Thin Films

Reversible Thermochromism to Tune Bandgap of Organic-Inorganic Hybrid Materials

Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (adv. Electron. Mater. 2/2018)

Alloyed Semiconductor Nanocrystals with Broad Tunable Band Gaps

Structural Properties And Enhanced Bandgap Tunability Of Quaternary Cdznos Epitaxial Films Grown By Pulsed Laser Deposition