Atomic arrangement matters: band-gap variation in composition-tunable (Ga1–xZnx)(N1–xOx) nanowires
Kai Zhang,Tao Chen,Yasir Abbas,Saad Ullah Jan,Zhaohui Zhou,Shengqi Chu,Guancai Xie,Sana Ullah,Muhammad Zain Akram,Jing Zhang,Yimin Xuan,Jian Ru Gong
DOI: https://doi.org/10.1016/j.matt.2020.12.024
IF: 18.9
2021-03-01
Matter
Abstract:We synthesized single-crystal (Ga <sub>1–x</sub>Zn <sub>x</sub>)(N <sub>1–x</sub>O <sub>x</sub>) nanowires with fully tunable compositions (0 < x < 1) using a customized chemical vapor deposition strategy. Despite the uniform distributions of component elements at the nanometer scale, X-ray absorption fine structure analysis in combination with <em>ab initio</em> multiple-scattering calculation verified the existence of a strong clustering tendency, i.e., the energetic preference of the valence-matched Ga-N and Zn-O pairs, in the synthesized nanowires. The strong clustering tendency plays a dominant role in determining the electronic band structures of the nanowires, causing a continuous band-gap reduction with increasing ZnO content, which is interpreted via a type II band alignment among the intracrystalline heterojunctions formed between the incorporated clusters and the host material. This, ultimately, makes the sample with the highest ZnO content show the highest water-splitting activity. Atomic arrangement engineering will provide an additional tool for band-gap engineering of semiconductor alloys, greatly benefiting the development of new functional materials for energy conversion applications.
materials science, multidisciplinary