Nanoribbon Devices: P‐type Beta‐Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties (adv. Funct. Mater. 41/2013)

Mei Feng,Lin‐Bao Luo,Biao Nie,Shu‐Hong Yu
DOI: https://doi.org/10.1002/adfm.201370209
IF: 19
2013-01-01
Advanced Functional Materials
Abstract:Two basic building blocks including nano-fieldeffect transistors (nano-FETs) and nano-Schottky barrier diodes (nano-SBDs) are constructed by S.-H. Yu and co-workers, indicating the great potential of β-AgVO3 nanoribbons for application in nanoelectronic devices. On page 5116, the diameter of the bridging nanoribbons and their numbers are tailored, and the surfaces are modified through light-irradiating the backbones of the nanoribbons.
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