Electronic Properties of Polycrystalline Graphene under Large Local Strain
Xin He,Li Gao,Ning Tang,Junxi Duan,Fuhong Mei,Hu Meng,Fangchao Lu,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen
DOI: https://doi.org/10.1063/1.4883866
IF: 4
2014-01-01
Applied Physics Letters
Abstract:To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.