Abstract:Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature, $T_\mathrm{c}$. All compounds, except Ti$_2$CoSi possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest and next-nearest neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3$d$-ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and $T_\mathrm{c}$ of the SGSs. We find that the $T_\mathrm{c}$ of all compounds is much above the room temperature. The calculated magnetization curve for Mn$_2$CoAl as well as the Curie temperature are in very good agreement with available experimental data. The present study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices.

First-principles Calculated Spin-Gapless Semiconducting Behavior in Quaternary VCoHfGa and CrFeHfGa Heusler Compounds

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

First-principles Investigation on the Transport Properties of Quaternary CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) Heusler Compounds.

Distinct transport behaviors and electronic structures in Heusler alloys CoFeCrGa and CoFeCrAl

Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

Structural, Electronic, Half-Metallic and Thermoelectric Properties of Quaternary Heusler Alloys AgCoFeZ (Z = Al, Ga, Si, Ge, and Sn), NiFeCrZ(Z = Al, Si, Ge, In) and NdCoMnGa: a First Principles Study

Physical Properties of CoX'ZrGa (X' = V, Cr) Quaternary-Heuslers: A First-Principles Investigation

Peculiarities of Electronic Transport and Magnetic State in Half-Metallic Ferromagnetic and Spin Gapless Semiconducting Heusler Alloys

First principle studies on half-metallicity and pressure-induced half-metallic band gap in 3-d transition metal-based quaternary Heusler ScVCoZ (Z = Si, Ge, Sn, P, As, and Sb) alloys

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

First-principles investigations of the half-metallic ferromagnetic LaCoTiIn equiatomic quaternary Heusler alloy for spintronics

Atomic Configuration, Unusual Lattice Constant Change, and Tunable Ferromagnetism in All-D-metal Heusler Alloys Fe2CrV-FeCr2V

Electronic Structures, Magnetic Properties and Half-Metallicity in Heusler Alloys Zr2CoZ (z=al, Ga, In, Sn)

The Half-Metallicity Of Limgpdsn-Type Quaternary Heusler Alloys Femnscz (Z=Al, Ga, In): A First-Principle Study

Electronic and magnetic properties of Co2Fe(Ga1−xSix) and Co2Fe(Al1−ySiy) Heusler alloys with high Curie temperature

DFT and Monte Carlo simulations of the equiatomic quaternary Heusler Alloy CoFeCrP

Tailoring compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn-Ru-V-Ga Heusler compounds

Understanding magnetic behaviors of FeCoNiSi0.2M0.2 (M=Cr, Mn) high entropy alloys via first-principle calculation

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

First Principles Electronic Structure and Magnetic Properties of Inverse Heusler Alloys X2YZ(X=Cr; Y=Co, Ni; Z=Al, Ga, In, Si, Ge, Sn, Sb)

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys