Abstract:The Heusler alloys CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) have similar chemical compositions, but exhibit remarkably distinct electronic structures, magnetism and transport properties. These structures cover an extensive range of spin gapless semiconductors, half-metals, semiconductors and metals with either ferromagnetic, ferrimagnetic, antiferromagnetic, or nonmagnetic states. The Heusler alloys have three types of structures, namely, type-I, type-II, and type-III. By means of first-principles calculation combined with the Boltzmann equation within the consideration of spin-freedom, we explore the transport feature of the most stable structure (type-I). In addition, we provide evidence that all the considered materials are mechanically and dynamically stable, possessing high strength and toughness to resist compression and tensile strain. Moreover, the distinct electronic (metallic, insulating, and half-metallic) properties and magnetic behaviors originate mainly from a cooperative electron transfer and electronic structures have been verified by our calculation. Finally, we found that the tunable electronic structure with varied atomic numbers has significant influence on the spin-Seebeck effect. Correspondingly, the calculated spin-Seebeck coefficient of CoFeCrGa is -60.29 μV K-1 at 300 K, which is larger than that of other quaternary Heusler compounds. Our results provide a band-engineering platform to design Heusler structures with different electronic behaviors in isomorphic compounds, which provide the way for accelerating the pre-screening of materials to advance and for using the quaternary Heusler compounds for potential applications in spin caloritronic devices.

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Complete spin gapless semiconductivity in equiatomic quarternary Heusler material TiZrMnAl

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Distinct transport behaviors and electronic structures in Heusler alloys CoFeCrGa and CoFeCrAl

High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

New Quaternary Half-Metallic Materials of the Z T − 28 Rule in LiMgPdSn-Type Heusler Alloys

First-principles Investigation on the Transport Properties of Quaternary CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) Heusler Compounds.

Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

The Half-Metallicity Of Limgpdsn-Type Quaternary Heusler Alloys Femnscz (Z=Al, Ga, In): A First-Principle Study

Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films

Search for spin gapless semiconductors: The case of inverse Heusler compounds

Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

Structural, Electronic, Half-Metallic and Thermoelectric Properties of Quaternary Heusler Alloys AgCoFeZ (Z = Al, Ga, Si, Ge, and Sn), NiFeCrZ(Z = Al, Si, Ge, In) and NdCoMnGa: a First Principles Study

Multiple Dimensions of Spin-Gapless Semiconducting States in Tetragonal Sr2CuF6

Effect of antisite disorder on the magnetic and transport properties of a quaternary Heusler alloy

Spin Hall Conductivity and Anomalous Hall Conductivity in Full Heusler Compounds

Systematic understanding of half-metallicity of ternary compounds in Heusler and Inverse Heusler structures with 3$d$ and 4$d$ elements

Covalent bonding and the nature of band gaps in some half-Heusler compounds

Peculiarities of Electronic Transport and Magnetic State in Half-Metallic Ferromagnetic and Spin Gapless Semiconducting Heusler Alloys