Abstract:Recently, Heusler alloys-based spin gapless semiconductors (SGSs) with high Curie temperature (TC) and sizeable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive investigation of the temperature dependent ANE and intrinsic longitudinal spin Seebeck effect (LSSE) in CoFeCrGa thin films grown on MgO substrates. Our findings show the anomalous Nernst coefficient for the MgO/CoFeCrGa (95 nm) film is $\cong 1.86$ micro V/K at room temperature which is nearly two orders of magnitude higher than that of the bulk polycrystalline sample of CoFeCrGa (= 0.018 micro V/K) but comparable to that of the magnetic Weyl semimetal Co2MnGa thin film (2-3 micro V/K). Furthermore, the LSSE coefficient for our MgO/CoFeCrGa(95nm)/Pt(5nm) heterostructure is $\cong 20.5$ $\mu$V/K/$\Omega$ at room temperature which is twice larger than that of the half-metallic ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films ($\cong$ 20.5 $\mu$V/K/$\Omega$). We show that both ANE and LSSE coefficients follow identical temperature dependences and exhibit a maximum at $\cong$ 225 K which is understood as the combined effects of inelastic magnon scatterings and reduced magnon population at low temperatures. Our analyses not only indicate that the extrinsic skew scattering is the dominating mechanism for ANE in these films but also provide critical insights into the functional form of the observed temperature dependent LSSE at low temperatures. Furthermore, by employing radio frequency transverse susceptibility and broadband ferromagnetic resonance in combination with the LSSE measurements, we establish a correlation among the observed LSSE signal, magnetic anisotropy and Gilbert damping of the CoFeCrGa thin films, which will be beneficial for fabricating tunable and highly efficient Heusler alloys based spincaloritronic nanodevices.

Search for spin gapless semiconductors: The case of inverse Heusler compounds

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study

Multiple Dimensions of Spin-Gapless Semiconducting States in Tetragonal Sr2CuF6

Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first principles

Distinct transport behaviors and electronic structures in Heusler alloys CoFeCrGa and CoFeCrAl

Designing Organic Spin-Gapless Semiconductors via Molecular Adsorption on C4N3 Monolayer

Direct Visualization of Sign-Reversal S(+/-) Superconducting Gaps in FeTe0.55Se0.45

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

Recent progress in topological semimetal and its realization in heusler compounds

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Investigation of nodal line spin-gapless semiconductors using first-principles calculations

Spin Gapless van der Waals Heterostructure for Spin Gating Through Magnetic Injection Device

Complete spin gapless semiconductivity in equiatomic quarternary Heusler material TiZrMnAl

First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation

Large thermo-spin effects in Heusler alloy based spin-gapless semiconductor thin films

Peculiarities of Electronic Transport and Magnetic State in Half-Metallic Ferromagnetic and Spin Gapless Semiconducting Heusler Alloys