Abstract:Mechanisms of defect formation near surface ledges of a diamond cubic crystal subjected to compressive strain parallel to the surface are investigated as precursory processes to dislocation nucleation in Si1-xGex/Si(100) heteroepitaxial thin films under surface diffusion conditions. This study is motivated by our preliminary calculations of dislocation formation at surface ledges in a model crystal characterized by the 6–12 Lennard-Jones interatomic potential, and by our controlled annealing experiments on evolution of a Si1-xGex/Si(100) film from an atomically flat, defect-free, surface morphology to an undulating surface morphology with cusp-like surface features and dislocation formation at the cusp valley. When subjecting such films to high temperature anneals, we observed nucleation and growth of three types of dislocations: the 60° glide dislocations, the 90° Lomer-Cottrell dislocations with stair rod Shockley partials and twinned wedge disclinations with twofold ∑9 coincidence boundaries between the wedge and matrix. The objective of this paper is to examine the sequence of atomistic processes which lead to the formation of each of these three types of defects, and in doing so we hope to foster a link between the continuum picture of dislocation nucleation in thin films and the quantum mechanical picture of the unstable collapse of surface ledges due to compressive strain. While we do not actually perform quantum mechanical calculations in this paper, attempts will be made to identify the critical problems that need to be addressed at the quantum mechanics level. Although the present study should be of general interest in the study of dislocation formation near crystal surface ledges, we will confine our discussion to the problem of dislocation formation during stress driven mass transport via surface diffusion in heteroepitaxial thin films which are morphologically unstable under cycloid-like variations in surface shape. The following process is envisioned as undulations form in the film surface. As the curvature at the root of a surface ‘valley’ increases, the local elastic strain magnitude rises as a result of the local geometrical magnification of stress. The strain continues to increase in magnitude as the root sharpens, until atomic ledges collapse to form dislocations. Due to the resulting stress relief, subsequent mass transport reverses its direction of flow and causes such dislocations to be trapped as bulk defects as the film surface moves away from the nucleation sites. Through this mechanism, dislocations can be nucleated without glide by surface trapping in films with even a modest level of nominal compressive mismatch strain.

Dislocation Nucleation from A Surface Cusp

Atomistic models of dislocation formation at crystal surface ledges in Si<sub>1-x</sub>Ge<sub>x</sub>/Si(100) heteroepitaxial thin films

SURFACE ROUGHENING OF HETEROEPITAXIAL THIN FILMS

Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure

Dislocation Nucleation Facilitated by Atomic Segregation

Surface dislocation nucleation from frictional sliding contacts

Surface Roughening During Low-Temperature Si Epitaxial Growth on Singular Vs Vicinal Si(001) Substrates.

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Surface Dislocation Nucleation by Wedge Indenter Contacts

New Mechanisms of Helical Dislocation Formation Via the Pinch-off Process Near a Nano-Inhomogeneity

Stress singularities along a cycloid rough surface

A Fusion-Crystalization Mechanism for Nucleation of Misfit Dislocations in Fcc Epitaxial Films

Stress-driven Surface Evolution in Heteroepitaxial Thin Films: Anisotropy of the Two-Dimensional Roughening Mode

Cusp-like Flaws along a Rough Surface

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

A Molecular Dynamics Study of Nucleation of Dislocation in Growth of Silicon from Melt

Structure and formation of misfit dislocations in an epitaxial fcc film

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(001) heteroepitaxy

Misfit dislocations in an annular strained film grown on core-shell nanowires surface with surface/interface effects

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

A Screw Dislocation Nucleated from A Triple Junction