Ultrafast Mid-IR Carrier Dynamics in Three-Dimensional Dirac Semimetal Cd3AS2

Chunhui Zhu,Xiang Yuan,Yongbing Xu,Faxian Xiu,Fengqiu Wang

DOI: https://doi.org/10.1109/cleopr.2015.7375972

2015-01-01

Abstract:We investigated ultrafast carrier dynamics in Cd3As2 at 2.6 μm. Single-exponential decay and saturable absorption features are observed. The ultrafast optical nonlinearity suggests that Cd3As2 is useful for mode-locking lasers in the mid-IR range.

What problem does this paper attempt to address?

Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermions in the Three-Dimensional Dirac Semimetalcd3as2

Wei Lu,Shaofeng Ge,Xuefeng Liu,Hong Lu,Caizhen Li,Jiawei Lai,Chuan Zhao,Zhimin Liao,Shuang Jia,Dong Sun

DOI: https://doi.org/10.1103/physrevb.95.024303

2017-01-01

Abstract:Three-dimensional (3D) Dirac semimetals that can be seen as 3D analogues of graphene have attracted enormous interest in research recently. In order to apply these ultra-high-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this paper, we report ultrafast transient reflection measurements of the photoexcited carrier dynamics in cadmium arsenide (Cd3As2), which is one of the most stable Dirac semimetals that have been confirmed experimentally. By using the low-energy probe photon of 0.3 eV, we probed the dynamics of the photoexcited carriers that are Dirac-Fermi-like approaching the Dirac point. We systematically studied the transient reflection on bulk and nanoplate samples that have different doping intensities by tuning the probe wavelength, pump power, and lattice temperature and find that the dynamical evolution of carrier distributions can be retrieved qualitatively by using a two-temperature model. This result is very similar to that of graphene, but the carrier cooling through the optical phonon couplings is slower and lasts over larger electron temperature range because the optical phonon energies in Cd3As2 are much lower than those in graphene.
Ultrafast Photocarrier Dynamics in a 3D Dirac Semimetal Cd3As2 Film Studied with Terahertz Spectroscopy

Wenjie Zhang,Yunkun Yang,Peng Suo,Wanying Zhao,Jiajia Guo,Qi Lu,Xian Lin,Zuanming Jin,Lin Wang,Gang Chen,Faxian Xiu,Weimin Liu,Chao Zhang,Guohong Ma

DOI: https://doi.org/10.1063/1.5086085

IF: 4

2019-01-01

Applied Physics Letters

Abstract:By employing optical pump Terahertz (THz) probe spectroscopy, a three dimensional (3D) Dirac semimetal, Cd3As2 film, was investigated systematically at room temperature. After photoexcitation at 400/800nm, the rise time of photoenhanced THz photoconductivity (PC) is about approximate to 1.0 ps, increasing slightly with the pump fluence, in which time scale, photoexcited electrons and holes establish separate Fermi distribution with electrons in the conduction band and holes in the valence band via fast carrier-carrier scattering and carrier-phonon coupling. The subsequent THz PC relaxation shows single exponential decay with a time constant of approximate to 6.0 ps that is independent of pump fluence. The relaxation process is dominated by the electron-hole recombination via a radiative and nonradiative way, which is mediated by the phonon-phonon scattering. The optically induced THz complex PC can be well fitted with the Drude-Smith model. Our experimental results shed light on understanding the photocarrier dynamics of the 3D Dirac semimetal materials at THz frequency.
Broadband Hot-Carrier Dynamics In Three-Dimensional Dirac Semimetal Cd3as2

Chunhui Zhu,Xiang Yuan,Faxian Xiu,Chao Zhang,Yongbing Xu,Rong Zhang,Yi Shi,Fengqiu Wang

DOI: https://doi.org/10.1063/1.4985688

IF: 4

2017-01-01

Applied Physics Letters

Abstract:The hot-carrier relaxation dynamics of Cd3As2 thin films has been investigated by using femtosecond pump-probe spectroscopy in a transmission geometry. A comparative study of degenerate and non-degenerate experiments reveals that hot-carrier distribution in Cd3As2 is established with a time constant of similar to 400 fs. Significantly, the broadband measurements allow the extraction of the time evolution of electron temperature and the carrier-phonon coupling factor g = 5.3 x 10(15) W m(-3) K-1 is deduced by a semiclassical two-temperature model. These results provide fundamental insights into the hot-carrier dynamics of Cd3As2. Published by AIP Publishing.
Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

Wei Lu,Shaofeng Ge,Xuefeng Liu,Hong Lu,Caizhen Li,Jiawei Lai,Chuan Zhao,Zhimin Liao,Shuang Jia,Dong Sun

DOI: https://doi.org/10.1364/isuptw.2016.it2a.21

2016-01-01

Abstract:Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of the photoexcited carrier dynamics in cadmium arsenide (Cd3As2), which is one of the most stable Dirac semimetals that have been confirmed experimentally. By using low energy probe photon of 0.3 eV, we probed the dynamics of the photoexcited carriers that are Dirac-Fermi-like approaching the Dirac point. We systematically studied the transient reflection on bulk and nanoplate samples that have different doping intensities by tuning the probe wavelength, pump power and lattice temperature, and find that the dynamical evolution of carrier distributions can be retrieved qualitatively by using a two-temperature model. This result is very similar to that of graphene, but the carrier cooling through the optical phonon couplings is slower and lasts over larger electron temperature range because the optical phonon energies in Cd3As2 are much lower than those in graphene.
Terahertz Probe of Photoexcited Carrier Dynamics in the Dirac Semimetal Cd3As2

Wei Lu,Jiwei Ling,Faxian Xiu,Dong Sun

DOI: https://doi.org/10.1103/physrevb.98.104310

2018-01-01

Abstract:The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals is vital towards their application in high-performance electronic and optoelectronic devices. In this work, the relaxation dynamics of photoexcited carriers of 3D Dirac semimetal ${\mathrm{Cd}}_{3}{\mathrm{As}}_{2}$ is investigated by transient terahertz spectroscopy. The visible pump-THz probe spectroscopy measurement shows clear biexponential decays with two characteristic time constants. According to the pump-power and temperature dependence, these two characteristic time constants are attributed to the electron-phonon coupling (1--4 ps) and anharmonic decay of hot coupled phonons to electronic uncoupled phonons (2--9 ps), respectively. An anomalous electron-optical phonon coupling reduction and a bottleneck slowing of hot optical phonon relaxation are observed with higher excitation intensities similar to that in graphene. On the other hand, the electron-optical phonon coupling can be enhanced due to the phonon frequency broadening and softening at elevated lattice temperature. Furthermore, the transient THz spectrum response is strongly modified by the phonon assisted intraband absorption of hot carriers from a pure electronic Drude model, which is evidenced by a characteristic THz absorption dip in the transient THz absorption spectrum. This absorption dip is pinned by the mixing of discrete optical phonon energies that assist the intraband transition enabled by photoexcitation of hot carriers.
Terahertz Probe of Photoexcited Carrier Dynamics in Dirac Semimetal Cd3As2

Wei Lu,Jiwei Ling,Faxian Xiu,Dong Sun

DOI: https://doi.org/10.1103/PhysRevB.98.104310

2018-07-09

Abstract:The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals are vital towards their application in high performance electronic and optoelectronic devices. In this work, the relaxation dynamics of photoexcited carriers of 3D Dirac semimetal Cd3As2 are investigated by transient terahertz spectroscopy. The visible pump-THz probe spectroscopy measurement shows clear biexponential decays with two characteristic time constants. According to the pump-power and temperature dependence, these two characteristic time constants are attributed to the electron phonon coupling (1-4 ps) and anharmonic decay of hot coupled phonons to electronic uncoupled phonons (2-9 ps), respectively. An anomalous electron-optical phonon coupling reduction and a bottleneck slowing of hot optical phonons relaxation are observed with higher excitation intensities similar to that in graphene. On the other hand, the electron-optical phonon coupling can be enhanced due to the phonon frequency broadening and softening at elevated lattice temperature. Furthermore, the transient THz spectrum response is strongly modified by the phonon assisted intraband absorption of hot carriers from a pure electronic Drude model, which is evidenced by a characteristic THz absorption dip in the transient THz absorption spectrum. This absorption dip is pinned by the discrete optical phonon energy that assists the intraband transition enabled by photoexcitation of hot carriers.

Optics
Dynamic Terahertz Response in the Dirac Semimetal Cd 3 AS 2 Induced by Ultrafast Optical Excitation

Wei Lu,Jiwei Ling,Faxian Xiu,Dong Sun

DOI: https://doi.org/10.1364/cleo_at.2018.jw2a.133

2018-01-01

Abstract:Hot electron relaxation and coupling in Cd 3 As 2 is studied by employing ultrafast time-domain THz spectroscopy. The excited carriers enhance the absorption of THz and relax in ps-time scales, the cooling rules consistent with mid-IR spectroscopy.
High Mobility 3D Dirac Semimetal (cd3as2) for Ultrafast Photoactive Terahertz Photonics

Zijie Dai,Manukumara Manjappa,Yunkun Yang,Thomas Cai Wei Tan,Bo Qiang,Song Han,Liang Jie Wong,Faxian Xiu,Weiwei Liu,Ranjan Singh

DOI: https://doi.org/10.1002/adfm.202011011

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:The Dirac semimetal cadmium arsenide (Cd3As2), a 3D electronic analog of graphene, has sparked renewed research interests for its novel topological phases and excellent optoelectronic properties. The gapless nature of its 3D electronic band facilitates strong optical nonlinearity and supports Dirac plasmons that are of particular interest to realize high‐performance electronic and photonic devices at terahertz (1 THz = 4.1 meV) frequencies, where the performance of most dynamic materials are limited by the tradeoff between power‐efficiency and switching speed. Here, all‐optical, low‐power, ultrafast broadband modulation of terahertz waves using an ultrathin film (100 nm, λ/3000) of Cd3As2 are experimentally demonstrated through active tailoring of the photoconductivity. The measurements reveal the photosensitive metallic behavior of Cd3As2 with high terahertz electron mobility of 7200 cm2 (Vs)−1. In addition, optical fluence dependent ultrafast charge carrier relaxation (15.5 ps), terahertz mobility, and long momentum scattering time (157 fs) comparable to superconductors that invoke kinetic inductance at terahertz frequencies are demonstrated. These remarkable properties of 3D Dirac topological semimetal envision a new class of power‐efficient, high speed, compact, tunable electronic, and photonic devices.
A High-Performance Mid-infrared Optical Switch Enabled by Bulk Dirac Fermions in Cd3As2

Chunhui Zhu,Fengqiu Wang,Yafei Meng,Xiang Yuan,Faxian Xiu,Hongyu Luo,Yazhou Wang,Jianfeng Li,Xinjie Lv,Liang He,Yongbing Xu,Yi Shi,Rong Zhang,Shining Zhu

DOI: https://doi.org/10.1038/ncomms14111

2016-02-29

Abstract:Pulsed lasers operating in the 2-5 {\mu}m band are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain media, the lack of a capable pulse generation mechanism, i.e. a passive optical switch, remains a significant technological challenge. Here we show that mid-infrared optical response of Dirac states in crystalline Cd3As2, a three-dimensional topological Dirac semimetal (TDS), constitutes an ideal ultrafast optical switching mechanism for the 2-5 {\mu}m range. Significantly, fundamental aspects of the photocarrier processes, such as relaxation time scales, are found to be flexibly controlled through element doping, a feature crucial for the development of convenient mid-infrared ultrafast sources. Although various exotic physical phenomena have been uncovered in three-dimensional TDS systems, our findings show for the first time that this emerging class of quantum materials can be harnessed to fill a long known gap in the field of photonics.

Materials Science,Optics
Impurity-modulated Ultrafast Carrier Dynamics in 3D Dirac Semimetal Cd3As2

Wenjie Zhang,Yunkun Yang,Peng Suo,Xian Lin,Faxian Xiu,Guohong Ma

DOI: https://doi.org/10.1109/irmmw-thz50926.2021.9567640

2021-01-01

Abstract:In this work, we use optical pump-terahertz (THz) probe spectroscopy to investigated the impurity-induced topological phase transition and the photo-induced carrier behavior in cadmium arsenide (Cd3As2), a three-dimensional Dirac semimetal. By comparing the dynamics of different temperature and pump fluence, we discuss the carrier dynamics and physical mechanism caused by impurity.
Semiconductorlike Photocarrier Dynamics in Dirac-semimetal Cd3As2 Films Probed with Transient Terahertz Spectroscopy

Wenjie Zhang,Yunkun Yang,Peng Suo,Kaiwen Sun,Jun Peng,Xian Lin,Faxian Xiu,Guohong Ma

DOI: https://doi.org/10.1103/physrevb.106.155137

2022-01-01

Abstract:The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past decades, one intriguing debate is the underlined mechanism that governing the nonequilibrium carrier dynamics following photoexcitation. In this study, the temperature dependent photocarrier dynamics in Cd3As2 film has been investigated with time-resolved terahertz spectroscopy. The experimental results demonstrate that photoexcitation results in abrupt increase in THz photoconductivity, and the subsequent relaxation shows a single exponential relaxation for various temperatures and pump fluences. The relaxation time increase from 4.7 ps at 5 K to 7.5 ps at 220 K, while the lifetime remains almost constant of ~7.5 ps with temperature above 220 K. A Rothwarf-Taylor model was employed to fit the temperature dependent relaxation time, and a narrow energy gap of ~35 meV is obtained, which occurs around the Dirac node. Our THz spectroscopy results demonstrate that the photocarrier relaxation in Cd3As2 shows a semiconductor-like behavior, rather than hot carrier scatterings in graphene and most of metals.
High Mobility 3D Dirac Semimetal (Cd 3 As 2 ) for Ultrafast Photoactive Terahertz Photonics

Zijie Dai,Manukumara Manjappa,Yunkun Yang,Thomas Cai Wei Tan,Bo Qiang,Song Han,Liang Jie Wong,Faxian Xiu,Weiwei Liu,Ranjan Singh

DOI: https://doi.org/10.1002/adfm.202011011

IF: 19

2021-02-23

Advanced Functional Materials

Abstract:Abstract The Dirac semimetal cadmium arsenide (Cd 3 As 2 ), a 3D electronic analog of graphene, has sparked renewed research interests for its novel topological phases and excellent optoelectronic properties. The gapless nature of its 3D electronic band facilitates strong optical nonlinearity and supports Dirac plasmons that are of particular interest to realize high‐performance electronic and photonic devices at terahertz (1 THz = 4.1 meV) frequencies, where the performance of most dynamic materials are limited by the tradeoff between power‐efficiency and switching speed. Here, all‐optical, low‐power, ultrafast broadband modulation of terahertz waves using an ultrathin film (100 nm, λ/3000) of Cd 3 As 2 are experimentally demonstrated through active tailoring of the photoconductivity. The measurements reveal the photosensitive metallic behavior of Cd 3 As 2 with high terahertz electron mobility of 7200 cm 2 (Vs) −1 . In addition, optical fluence dependent ultrafast charge carrier relaxation (15.5 ps), terahertz mobility, and long momentum scattering time (157 fs) comparable to superconductors that invoke kinetic inductance at terahertz frequencies are demonstrated. These remarkable properties of 3D Dirac topological semimetal envision a new class of power‐efficient, high speed, compact, tunable electronic, and photonic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Slowing Down Photocarrier Relaxation in Dirac Semimetal Cd3As2 Via Mn Doping.

Yue Sun,Yafei Meng,Ruihong Dai,Yunkun Yang,Yongbing Xu,Shining Ziu,Yi Shi,Faxian Xiu,Fengqiu Wang

DOI: https://doi.org/10.1364/ol.44.004103

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we successfully introduce a long-lived non-radiative photocarrier decay component in a Dirac semimetal Cd3As2 thin film via Mn doping. The long-lived decay component is found to vary between 200 ps and 2.8 ns with different Mn concentrations and probing wavelengths. Most remarkably, the elongated transients persist over the important mid-infrared wavelengths (observed up to 4 mu m). Saturable absorption measurement reveals stronger modulation effects for long-width pulses (similar to 80 ps) from the Mn-doped samples. Our results provide new insights into the effect of transition-metal doping on the ultrafast optical properties of Dirac semimetal Cd3As2 and establish Cd3As2 as a highly amendable material for mid-infrared photonic applications. (C) 2019 Optical Society of America
Three-dimensional Dirac Semimetal Thin-Film Absorber for Broadband Pulse Generation in the Near-Infrared

Yafei Meng,Chunhui Zhu,Yao Li,Xiang Yuan,Faxian Xiu,Yi Shi,Yongbing Xu,Fengqiu Wang

DOI: https://doi.org/10.1364/ol.43.001503

2018-01-01

Abstract:In this Letter, the transient nonlinear absorption of three-dimensional (3D) topological Dirac semimetal Cd3As2 thin film was characterized in the near-infrared band. By performing broadband pump-probe measurements, we experimentally proved that molecular beam epitaxy (MBE) grown Cd3As2 exhibits strong and tunable saturable absorption effects across 1-2 μm. By further inserting the Cd3As2 film into the cavities of Tm- and Er-doped fiber lasers, we obtained stable mode-locked operations at 1.96 and 1.56 μm. Our results experimentally establish that Cd3As2 is a promising broadband saturable absorber (SA) for pulsed lasers in the infrared range.
Three-dimensional Dirac Semimetal Cd3As2 As High-Performance 2-5 Μm Saturable Absorbers

Chunhui Zhu,Yafei Meng,Xiang Yuan,Faxian Xiu,Yongbing Xu,Fengqiu Wang

DOI: https://doi.org/10.1364/cleo_si.2016.stu4r.4

2016-01-01

Abstract:2-5 mu m saturable absorbers are highly desirable for constructing convenient mid-infrared ultrafast sources. We reveal that three-dimensional Dirac semimetal Cd3As2 constitutes an ideal mid-infrared saturable absorber, with broadband operation and flexible parameter control.
Photoexcited Electron Dynamics in Cd3As2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

Zhaohang Xue,Xin Liao,Yaolong Li,Aiqin Hu,Junyan Chen,Jinglin Tang,Hong Yang,Zhi-Min Liao,Guowei Lu,Qihuang Gong

DOI: https://doi.org/10.1021/acs.jpcc.1c10132

2022-01-01

Abstract:Cd3As2, as a three-dimensional Dirac semimetal, has attracted considerable research interest because of its distinct optoelectronic and topological properties. However, simultaneous studies on the carrier dynamics in Cd3As2 in spatial, temporal, and energy dimensions are still lacking. Here, we apply photoemission electron microscopy combined with the femtosecond pump-probe technique to reveal the dynamics of the Cd3As2 nanoplate. The photoexcited electrons on the Cd3As2 surface decay fast with an average decay time of 0.68 ps. The electron dynamics are independent of the spatial location by analyzing the decay curves at different positions on the Cd3As2 nanoplate. The effect of boundary states on the relaxation process is negligible. The photoexcited electrons can relax in picoseconds, regardless of the pump or probe power. In the energy-resolved mode, the decay time of nonequilibrium electrons decreases from 7 to 0.25 ps as the energy of hot electrons increases. These results contribute to understanding the photoexcited electron behavior of Cd3As2.
Electrical transport and optical properties of Cd3As2 thin films

Yun-Kun Yang,Fa-Xian Xiu,Feng-Qiu Wang,Jun Wang,Yi Shi

DOI: https://doi.org/10.1088/1674-1056/ab3a91

2019-01-01

Chinese Physics B

Abstract:Cd3As2, as a three-dimensional (3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.
Third harmonic generation in Dirac semimetal Cd 3 As 2

Kaleem Ullah,Yafei Meng,Yue Sun,Yunkun Yang,Xiangjing Wang,Anran Wang,Xinran Wang,Faxian Xiu,Yi Shi,Fengqiu Wang

DOI: https://doi.org/10.1063/5.0010707

IF: 4

2020-07-06

Applied Physics Letters

Abstract:Cadmium arsenide (Cd3As2), an emerging three-dimensional Dirac semimetal, has recently generated significant interest in the area of ultrafast optics and optoelectronics. However, its nonlinear susceptibility has not been experimentally studied; thus, it is not yet possible to evaluate its potential in nonlinear optics. In this work, we investigate third harmonic generation (THG) in a 100 nm thick Cd3As2 film using broadband infrared femtosecond lasers (across 1500–2350 nm). The χ3 of Cd3As2 (2.30 × 10−19 m2 V−2) is obtained by comparing the THG spectra with a glass substrate, graphene, and monolayer MoS2. We further demonstrate a simple approach to enhance the THG signal by introducing an underlying planar micro-cavity. An enhancement of about 420 times in the THG signal was recorded at ≃1560 nm. Our results indicate that Cd3As2 thin films can provide a similar platform for nonlinear optics with respect to graphene and may offer unique potential in the mid-infrared due to its broadband light–matter interaction and excellent tunability.

physics, applied
Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal Cd$_3$As$_2$ thin film

Natsuki Kanda,Yuta Murotani,Takuya Matsuda,Manik Goyal,Salva Salmani-Rezaie,Jun Yoshinobu,Susanne Stemmer,Ryusuke Matsunaga

DOI: https://doi.org/10.48550/arXiv.2110.09689

2021-10-19

Materials Science

Abstract:The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal Cd$_3$As$_2$ by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 $\mu$m), which covers the crossover between the inter and intraband response. We resolve dynamics of the photoexcited nonthermal electrons which merge with originally existing carriers to form a single thermalized electron gas and how it is facilitated by high-density excitation. We also demonstrate that a large reduction of the refractive index by 80% dominates the nonequilibrium infrared response, which can be utilized for designing ultrafast switches in active optoelectronics.
A Robust and Tuneable Mid-Infrared Optical Switch Enabled by Bulk Dirac Fermions

Chunhui Zhu,Fengqiu Wang,Yafei Meng,Xiang Yuan,Faxian Xiu,Hongyu Luo,Yazhou Wang,Jianfeng Li,Xinjie Lv,Liang He,Yongbing Xu,Junfeng Liu,Chao Zhang,Yi Shi,Rong Zhang,Shining Zhu

DOI: https://doi.org/10.1038/ncomms14111

IF: 16.6

2017-01-01

Nature Communications

Abstract:Pulsed lasers operating in the mid-infrared (3–20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd 3 As 2 , a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd 3 As 2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

Ultrafast Mid-IR Carrier Dynamics in Three-Dimensional Dirac Semimetal Cd3AS2

Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermions in the Three-Dimensional Dirac Semimetalcd3as2

Ultrafast Photocarrier Dynamics in a 3D Dirac Semimetal Cd3As2 Film Studied with Terahertz Spectroscopy

Broadband Hot-Carrier Dynamics In Three-Dimensional Dirac Semimetal Cd3as2

Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

Terahertz Probe of Photoexcited Carrier Dynamics in the Dirac Semimetal Cd3As2

Terahertz Probe of Photoexcited Carrier Dynamics in Dirac Semimetal Cd3As2

Dynamic Terahertz Response in the Dirac Semimetal Cd 3 AS 2 Induced by Ultrafast Optical Excitation

High Mobility 3D Dirac Semimetal (cd3as2) for Ultrafast Photoactive Terahertz Photonics

A High-Performance Mid-infrared Optical Switch Enabled by Bulk Dirac Fermions in Cd3As2

Impurity-modulated Ultrafast Carrier Dynamics in 3D Dirac Semimetal Cd3As2

Semiconductorlike Photocarrier Dynamics in Dirac-semimetal Cd3As2 Films Probed with Transient Terahertz Spectroscopy

High Mobility 3D Dirac Semimetal (Cd 3 As 2 ) for Ultrafast Photoactive Terahertz Photonics

Slowing Down Photocarrier Relaxation in Dirac Semimetal Cd3As2 Via Mn Doping.

Three-dimensional Dirac Semimetal Thin-Film Absorber for Broadband Pulse Generation in the Near-Infrared

Three-dimensional Dirac Semimetal Cd3As2 As High-Performance 2-5 Μm Saturable Absorbers

Photoexcited Electron Dynamics in Cd3As2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

Electrical transport and optical properties of Cd3As2 thin films

Third harmonic generation in Dirac semimetal Cd 3 As 2

Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal Cd$_3$As$_2$ thin film

A Robust and Tuneable Mid-Infrared Optical Switch Enabled by Bulk Dirac Fermions