Abstract:Electrostatic doping in materials can lead to various exciting electronic properties, such as metal–insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magneto-resistance but limited carrier transport tunability. Here we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a ∼50-nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov–de Haas oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principle calculations. The present results offer new insights toward nanoelectronic and optoelectronic applications of Dirac semimetals in general and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized. The tunable quantum transport capabilities of cadmium arsenide thin films may unlock new applications for graphene-like semiconductors. Cadmium arsenide has similar electronic properties to graphene, but is easier to work with thanks to its three-dimensional crystal structure. Faxian Xiu of Fudan University in Shanghai and co-workers have now mapped out this material's band structure in confined 50-nanometre-thin film structures. By using a source-drain layout with an unconventional gate electrode — a droplet of ionic electrolyte that electrostatically dopes cadmium arsenide and changes its Fermi level — they saw remarkable conductivity switching behaviour, which is useful for ambipolar field effect transistors. Applying magnetic fields during device operation also revealed the possibility of generating quantum spin Hall effects — the team observed intriguing quantum oscillation conductivity when the Fermi level was pushed into the high-mobility conduction band. Cd3As2, which is known as a topological Dirac semimetal, has been grown on mica substrates by molecular beam epitaxy with high mobility. The temperature-dependent resistance of as-grown Cd3As2 thin films showed semiconducting behavior, indicating the band gap opening as opposed to the bulk counterpart. By solid electrolyte gating, the ambipolar effect and gate-tunable quantum oscillations were clearly demonstrated. These features make the Cd3As2 thin film system a promising platform to observe various exotic phenomena and realize new electronic applications.

Electrical transport and optical properties of Cd3As2 thin films

Thickness-dependent quantum oscillations in Cd3As2 thin films

High Mobility 3D Dirac Semimetal (cd3as2) for Ultrafast Photoactive Terahertz Photonics

High Mobility 3D Dirac Semimetal (Cd 3 As 2 ) for Ultrafast Photoactive Terahertz Photonics

Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$

Magnetotransport Properties of Cd3As2 Nanostructures

Gate-tunable Quantum Oscillations in Ambipolar Cd3As2 Thin Films

Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermions in the Three-Dimensional Dirac Semimetalcd3as2

Controllable Synthesis and Magnetotransport Properties of Cd3as2 Dirac Semimetal Nanostructures

and magnetotransport properties of Cd 3 As 2 Dirac semimetal nanostructures †

Temperature-dependent Terahertz Properties of Carriers and Phonons in the Topological Dirac Semimetal Cd3As2

Semiconductorlike Photocarrier Dynamics in Dirac-semimetal Cd3As2 Films Probed with Transient Terahertz Spectroscopy

Thickness-Controlled Three-Dimensional Dirac Semimetal for Scalable High-Performance Terahertz Optoelectronics

A High-Performance Mid-infrared Optical Switch Enabled by Bulk Dirac Fermions in Cd3As2

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

Direct Observation of Landau Level Resonance and Mass Generation in Dirac Semimetal Cd3As2 Thin Films

Third harmonic generation in Dirac semimetal Cd 3 As 2

Synthesis and Photovoltaic Properties of Cd3As2 Faceted Nanoplates and Nano-Octahedrons

Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal Cd3as2

Terahertz Probe of Photoexcited Carrier Dynamics in Dirac Semimetal Cd3As2