A Solution-Processed High-Efficiency P-Nio/n-zno Heterojunction Photodetector

Ratan Debnath,Ting Xie,Baomei Wen,Wei Li,Jong Y. Ha,Nichole F. Sullivan,Nhan V. Nguyen,Abhishek Motayed

DOI: https://doi.org/10.1039/c4ra14567d

IF: 4.036

2015-01-01

RSC Advances

Abstract:Solution-processed high-efficiency p–n heterojunction photodetectors have been developed using transition metal oxides.

What problem does this paper attempt to address?

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

Morteza Ahmadi,Masoud Abrari,Majid Ghanaatshoar

DOI: https://doi.org/10.1038/s41598-021-98273-5

IF: 4.6

2021-09-21

Scientific Reports

Abstract:Abstract We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO 2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p–n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of ~ 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 × 10 12 Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.

multidisciplinary sciences
Engineering of Interfacial Electron Transfer from Donor-Acceptor Type Organic Semiconductor to Zno Nanorod for Visible-Light Detection

Hongtao Lin,Yishi Wu,Xinqiang Cao,Hongbing Fu

DOI: https://doi.org/10.1021/jp3039847

2012-01-01

The Journal of Physical Chemistry C

Abstract:Interfacial electron transfer (IET) plays a key role in photoactive organic/inorganic hybrid nanomaterials and remains elusive with regard to interfacial energy level alignment. In this study, we prepared hybrid ZnO nanorods by grafting n-type perylene bisimide (PBI) derivatives bearing carboxylic acid groups at nitrogen positions. No evidence in terms of direct electron transfer from PBI to ZnO can be observed in PBI/ZnO hybrids. In sharp contrast, incorporation of electron-rich oligothiophene (nT, n = 1, 2) moieties into PBI core at bay positions resulted in a highly efficient cascade IET in nT-PBI/ZnO (n = 1, 2) hybrid nanorods, which was initiated by photoinduced electron transfer (PET) from nT (n = 1, 2) to PBI and then followed by charge shifting from PBI anion to ZnO across the interface. High performance UV vis photodetectors based on nT-PBI/ZnO (n = 1, 2) hybrids have been fabricated and show responsivity of 21.2 and 12.4 A/W and an on/off ratio as high as 537 and 403, whereas that based on PBI/ZnO shows little visible-light response. Our results suggest that donor acceptor type compounds can be used nanomaterials, in which efficient cascade LET modifies interfacial electronic structure and range. for constructing photoactive hybrid helps extend the spectral response
High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films.

Wenlei Yin,Jiayan Yang,Keyang Zhao,Anyang Cui,Jiaoyan Zhou,Wei Tian,Wenwu Li,Zhigao Hu,Junhao Chu

DOI: https://doi.org/10.1021/acsami.9b18663

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1-xNixO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10-7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.
Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Yang Wang,Fang Zhong,Hailu Wang,Hao Huang,Qing Li,Jiafu Ye,Meng Peng,Ting He,Yunfeng Chen,Yueming Wang,Lili Zhang,He Zhu,Xianying Wang

DOI: https://doi.org/10.1088/1361-6528/ab8e75

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, as a direct wide band gap semiconductor, zinc oxide (ZnO) nanomaterial has attracted a lot of attention. However, the widely investigated ZnO materials are strongly limited in fast-response and broadband photodetectors due to their inherent weaknesses, so an effective structure or mechanism of ZnO nanostructure photodetector is greatly needed. In this work, a photogating-controlled photodetector based on a ZnO nanosheet-HfO2-lightly doped Si architecture is demonstrated. Its performance was significantly improved by the photogating-controlled local field at the Si and HfO2 interfaces compared to the findings in other published works on ZnO. Consequently, the photodetector not only effectively balances the responsivity (as high as 5.6 A W-1) and response time (400 µs), but also broadens the wavelength response of the ZnO-based photodetectors from visible to near-infrared light range (~1200 nm). Additionally, the photogating-controlled ZnO photodetector enables high-resolution imaging both in the visible and near-infrared bands. Our photogating-controlled ZnO photodetectors not only exemplify the controllability of the gate electrode in high mobility materials but also provide a basis for the development of fast speed and high responsivity detection of high mobility materials.
High Performance Charge-Transfer Induced Homojunction Photodetector Based on Ultrathin ZnO Nanosheet

Yang Wang,Peng Wang,Yuankun Zhu,Jinrao Gao,Fan Gong,Qing Li,Runzhang Xie,Feng Wu,Ding Wang,Junhe Yang,Zhiyong Fan,Xianying Wang,Weida Hu

DOI: https://doi.org/10.1063/1.5063611

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Nanostructured zinc oxide (ZnO) semiconductors have emerged as promising materials for high-performance photodetectors due to their natural direct bandgap and extraordinary physicochemical properties. However, the oxygen vacancy defects of nano-ZnO can easily trap oxygen molecules in air and generate charge transfer at the interface, which induced continuous photoconductance that limited the development and application of ZnO in photodetection. Here, we demonstrate a homojunction ultrathin ZnO nanosheet photodetector with high performance and propose a better dominant photoresponse mechanism of the ZnO nanosheet driven by the charge transfer induced local field. The strong localized electric field significantly accelerates the separation of photo-generated carriers and effectively suppresses the dark current. Thus, the photodetector of the charge transfer induced homojunction exhibits ultralow dark current (10−12 A), ultra-high specific detectivity (up to ∼1014 Jones), and fast rising (300 ms) and decaying times (310 ms), taking advantages of high-performance and fast response speed and subverting the limitation of traditional ZnO photodetectors in the field of application. An easy-fabrication, fast response, and high-performance photodetector proposed here provides a good paradigm for the next-generation photodetectors based on two-dimensional nanostructures.
Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

Zhihao Huo,Yufei Zhang,Xun Han,Wenqiang Wu,Wenkai Yang,Xiandi Wang,Mengmeng Zhou,Caofeng Pan

DOI: https://doi.org/10.1016/j.nanoen.2021.106090

IF: 17.6

2021-08-01

Nano Energy

Abstract:ZnO, as a potential candidate, has attracted extensive attention in optoelectronics, energy systems and other fields. However, the wide bandgap of ZnO severely limits its application in a wide range of photoresponse, and preparing p-type ZnO is another stumbling block that hinders the development of ZnO-based devices. Here, a high-performance photodetector with a wider spectral detection range from UV–vis to NIR builds on the structure of p-ZnO/Al2O3/n-Si is fabricated. The PD exhibits a marked sensitivity (75,000%), excellent responsivity (13.80 A W−1, 365 nm), high specific detectivity (> 1012 Jones), fast response (< 100 μs), which indicates that inserting an insulated Al2O3 layer between an n-type semiconductor and a p-type semiconductor is a fruitful method to enhance carriers separation and collection efficiency. The carrier transport mechanism at the interface of PDs with different Al2O3 thickness is based on the quantum mechanical of Fowler-Nordheim tunneling or direct tunneling. Additionally, the overall signal levels of the photodetector could be further optimized using the piezo-phototronic effect. This study demonstrates an alternative route to implement high-efficiency photodetectors with a broader response range and provides an in-depth understanding of regulating carrier tunneling of the p-ZnO/Al2O3/n-Si heterojunction using the piezo-phototronic effect.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Facile Assembly of N-Sno(2) Nanobelts-P-nio Heterojunctions with Enhanced Ultraviolet Photoresponse.

Siya Huang,Hui Wu,Kohei Matsubara,Jing Cheng,Wei Pan

DOI: https://doi.org/10.1039/c3cc47860b

IF: 4.9

2013-01-01

Chemical Communications

Abstract:We present a highly transparent heterojunction photodiode by precisely aligning n-type SnO2 nanobelts on top of a p-type NiO thin film. This p-n junction diode demonstrates stable rectifying characteristics as well as greatly enhanced ultraviolet photoresponse, which exhibits an ultrahigh photosensitivity of up to 10(5) with accelerated response speed under reverse bias.
Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell

N.P. Klochko,V.R. Kopach,I.I. Tyukhov,D.O. Zhadan,K.S. Klepikova,G.S. Khrypunov,S.I. Petrushenko,V.M. Lyubov,M.V. Kirichenko,S.V. Dukarov,A.L. Khrypunova

DOI: https://doi.org/10.1016/j.solener.2018.01.054

IF: 7.188

2018-04-01

Solar Energy

Abstract:Wide bandgap inorganic metal oxide heterojunctions p-NiO/n-ZnO have been prepared by two low temperature solution growth techniques. Namely, one-dimensional ZnO nanostructure arrays electrodeposited in a pulsed mode, and nanocrystalline NiO films synthesized via Successive Ionic Layer Adsorption and Reaction (SILAR). The crystal structure, morphology, and optical properties of NiO films and NiO/ZnO heterostructures were investigated both before and after annealing in air. The analysis of the dark current vs. voltage characteristics and temporal response curves of the NiO films and corresponding NiO/ZnO heterostructures have shown the promise of their use in the effective UV-photodetectors. Poor photovoltaic characteristics of the test samples on the base of obtained NiO/ZnO heterostructures probably associated with their not quite optimal design, and with too large series resistances and diode ideality factors of the manufactured p-NiO/n-ZnO heterojunctions, that will be corrected by scrutinizing the defects in the metal oxides and through the improvement of the NiO/ZnO heterostructure design. Solving these problems will provide the effective application of the wide bandgap metal oxide NiO/ZnO heterostructures prepared by low temperature solution growth in the UV-active semi-transparent solar cells.

energy & fuels
p-(001)NiO/n-(0001)ZnO Heterostructures based Ultraviolet Photodetectors

Amandeep Kaur,Bhabani Prasad Sahoo,Ajoy Biswas,Subhabrata Dhar

2024-09-24

Abstract:We investigate the potential of epitaxial (001)p-NiO/(0001)n-ZnO heterostructures grown on (0001)sapphire substrates by pulsed laser deposition technique for ultraviolet photodetector application. Our study reveals that in the self-powered mode, these devices can serve as effective photodetectors for the UV-A band (320-400 nm) with response time as short as 400 microseconds. Peak responsivity as high as 5mA/W at zero bias condition have been achieved. These devices also show a very high level of stability under repeated on/off illumination cycles over a long period of time. Furthermore, we find that the response time of these detectors can be controlled from several microseconds to thousands of seconds by applying bias both in the forward and the reverse directions. This persistent photoconductivity effect has been explained in terms of the field induced change in the capture barrier height associated with certain traps located at the junction.

Applied Physics
Fast and High-Performance Self-Powered Photodetector Based on the ZnO/Metal-Organic Framework Heterojunction

Yingyi Wang,Lin Liu,Yixiang Shi,Shengzhao Li,Fuqin Sun,Qifeng Lu,Yaochun Shen,Simin Feng,Sujie Qin

DOI: https://doi.org/10.1021/acsami.3c01740

IF: 9.5

2023-04-02

ACS Applied Materials & Interfaces

Abstract:Electrical conductive metal-organic frameworks (EC-MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Here, we in situ grew nickel hexahydroxytriphenylene (Ni-CAT) on the surface of ZnO nanorods (NRs). The self-powered photodetectors (PDs) were fabricated with heterojunctions formed at the interface of ZnO NRs and Ni-CAT. With this, the built-in electric field (BEF) can effectively separate the...

materials science, multidisciplinary,nanoscience & nanotechnology
Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications

Sergio González,Giovanni Vescio,Juan Luis Frieiro,Alina Hauser,Flavio Linardi,Julian López‐Vidrier,Marek Oszajca,Sergi Hernández,Albert Cirera,Blas Garrido

DOI: https://doi.org/10.1002/admi.202300035

IF: 5.4

2023-04-20

Advanced Materials Interfaces

Abstract:First results of a NiO/ZnO heterojunction thin film photodetector fabricated in ambient conditions through inkjet printing technology. High‐quality individual layers of NiO and ZnO with high transparency (70‐90%) in the visible range allow the complete device fabrication with a marked wide band photoresponse when exposed to AM1.5 Global solar simulator light, realized as an exceptional four order of magnitude ratio in current at inverse polarization. Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transport layers. Solution‐processed metal oxide inks have already been demonstrated, although there is still a need for high‐quality inkjet‐printable metal oxide inks with a thermal post‐process below 200 °C. The set of inks in this work are adapted from low‐boiling point colloidal suspensions of metal oxide nanoparticles synthesized via flame spray pyrolysis. High quality, pinhole‐ and wrinkle‐free inkjet‐printed layers are obtained at low temperatures through vacuum oven post process, as proven by scanning electron microscopy. The crystallinity of the layers is confirmed by X‐ray diffraction, showing the expected hexagonal and cubic structures respectively for ZnO and NiO. The thin film layers reach over 70% (ZnO) and 90% (NiO) transparency in the visible spectrum. Their implementation in the inkjet‐printed p–n diode shows excellent I–V rectifying behavior with an ON/OFF ratio of two orders of magnitude at ±3 V and a forward threshold voltage of 2 V. Furthermore, the device exhibits an increase in photocurrent around four orders of magnitude when illuminated under a 1‐sun solar simulator.

materials science, multidisciplinary,chemistry
Highly stable and sensitive photoelectrochemical photodetectors based on a ZnO nanorod/monolayer MoS 2 nanosheets heterostructure

Jingyao Ma,Yanqing Ge,Pengpeng Dai,Chunhui Lu,Xinlong Xu

DOI: https://doi.org/10.1016/j.jallcom.2023.173315

IF: 6.2

2024-01-02

Journal of Alloys and Compounds

Abstract:Construction of type-II heterostructures between metal oxide nanorod arrays and narrow band gap semiconductors is a proven strategy for enlarging the surface area, shortening the diffusion length, broadening the light harvesting ability, and facilitating carrier transport, which are of great significance for photoelectrochemical (PEC) photodetectors. A ZnO/MoS 2 heterostructure was designed and fabricated via a facile hydrothermal process accompanied by chemical vapor deposition method. The ZnO nanorod/monolayer MoS 2 nanosheet heterostructure was revealed with scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. These heterojunction-based PEC photodetectors showed higher photoresponsivity (4.2 mA/W) than those of ZnO (∼0.9 mA/W) and MoS 2 photodetectors (∼0.007 mA/W) due to its fast interfacial charge transfer and efficient light capture. Furthermore, the ZnO/MoS 2 heterostructural photodetectors exhibited a maximum photoresponsivity of approximately 5.0 mA/W at 420 nm and long-term stability even over 6 h. Our work paves the way to rationally designed heterostructures for high-performance and stable photodetectors and beyond.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Fully Solution-Processed ZnO Nanorod Array/PEDOT:PSS Heterojunction Photodetector for Ultraviolet Light

Chandan Kumar,Ajinkya Palwe,Sweta Rani,Sumit Saxena,Shobha Shukla

DOI: https://doi.org/10.1109/led.2021.3135694

IF: 4.8157

2022-02-01

IEEE Electron Device Letters

Abstract:This letter reports an inorganic/organic heterojunction photodetector using n-type zinc oxide nanorod array (NRA) and p-type poly3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS). ZnO NRA is grown hydrothermally on the ZnO quantum dots (QDs) seed layer deposited on indium tin oxide (ITO) substrate. Further, ZnO NRA is treated with ZnO QDs to get rid of pinholes and PEDOT:PSS is spin-coated over ZnO NRA for the formation of heterojunction. The fully solution-processed ZnO NRA/PEDOT:PSS heterojunction photodetector has a top electrode of printable carbon paste. The ultraviolet (UV) photodetector has shown a maximum responsivity of 9.2 A/W and detectivity of $7.3 imes 10^{{12}}$ cmHz$^{ ext {1/2}} ext{W}^{-{1}}$ under the UV light illumination of $oldsymbol {sim }364$ nm wavelength with a power density of $102.3~ oldsymbol {mu }$ Wcm−2. Additionally, UV photodetector is highly spectrum selective with promising SNR and faster response.

engineering, electrical & electronic
Construction of g-C3N4/SnSe2/H-TiO2 Ternary Heterojunction for High-Performance Photodetectors

Xianfeng Zhao,Xiaoxu Yan,Xinxin Shao,Kangpeng Li,Minghong Sun,Xinpeng Ji,Huidan Lu,Yongping Liu

DOI: https://doi.org/10.1149/2162-8777/ad57f0

IF: 2.2

2024-06-14

ECS Journal of Solid State Science and Technology

Abstract:Two-dimensional layered materials have been widely used in the field of photodetectors because of their unique photoelectric properties. Among them, the multi-heterojunction based on two-dimensional materials with high carrier separation efficiency is expected to be designed as a high-performance photodetector (PD). This work focuses on the fabrication of g-C3N4/SnSe2/H-TiO2 ternary heterojunctions for photodetectors, obtained by depositing SnSe2 and g-C3N4 nanosheets onto TiO2 nanotube arrays using chemical vapor deposition and impregnation methods, respectively. The formation of the g-C3N4/SnSe2/H-TiO2 ternary heterojunction enhances and broadens absorption in the ultraviolet-visible range. Photoelectrochemical measurements have confirmed that the fabricated g-C3N4/SnSe2/H-TiO2 ternary heterojunction photodetector exhibits remarkable light detection capabilities at 370, 450, and 520 nm, meaning broadband photodetection behavior. Notably, under light illumination of 370 nm wavelength, it demonstrates a high responsivity of 2.742 A/W, an impressive detectivity of 5.84×1010 Jones, an external quantum efficiency of 9.21×102 %, and excellent stability. This high performance can be attributed to the effective separation and transfer of photogenerated carriers within the ternary heterojunction, significantly enhancing the photoresponse. The construction of the novel broadband-responsive ternary g-C3N4/SnSe2/TiO2 heterojunction holds promise for driving the future development of wideband, high-performance, and highly integrated photodetectors.

materials science, multidisciplinary,physics, applied
Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors

Muhammad Sulaman,Shengyi Yang,Ali Imran,Zhenheng Zhang,Arfan Bukhtiar,Zhenhua Ge,Yong Song,Feiyang Sun,Yurong Jiang,Libin Tang,Bingsuo Zou

DOI: https://doi.org/10.1021/acsami.3c01749

2023-05-31

Abstract:Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality semiconducting nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, p-n bulk-heterojunctions (BHJs) based photodetectors have shown high detectivity because of the suppressed dark current and high photocurrent, which are due to the larger built-in electric potential within the depletion region and can significantly improve the quantum efficiency by reducing the carriers' recombination. In this work, PbSe quantum dots (QDs) blended with ZnO nanocrystals (NCs) were used as the n-type layer, while CsPbBr3 NCs doped with P3HT were used as the p-type layer; as a result, a p-n BHJ was formed with a strong built-in electric field. Consequently, such a kind of p-n BHJ photodetector ITO/ZnO/PbSe:ZnO/CsPbBr3:P3HT/P3HT/Au showed a high ON/OFF current ratio of 105 with a photoresponsivity of 1.4 A/W and specific detectivity of 6.59 × 1014 Jones under 0.1 mW/cm2 532 nm illumination in self-driven mode. Moreover, the simulation performed by TCAD also agrees well with our experimental results, and the underlying physical mechanism for enhanced performance is discussed in detail for this type of p-n BHJ photodetector.
Solution-processed Nanoporous NiO-dye-ZnO Photocathodes: Toward Efficient and Stable Solid-State P-Type Dye-Sensitized Solar Cells and Dye-Sensitized Photoelectrosynthesis Cells

Bo Xu,Lei Tian,Ahmed S. Etman,Junliang Sun,Haining Tian

DOI: https://doi.org/10.1016/j.nanoen.2018.10.054

IF: 17.6

2018-01-01

Nano Energy

Abstract:A solution-processed NiO-dye-ZnO photocathode was developed for applications in both solid-state p-type dye-sensitized solar cells (p-ssDSCs) and p-type dye-sensitized photoelectrosynthesis cells (p-DSPECs). In p-ssDSCs, the solar cell using ZnO as electron transport material showed a short circuit current, up to 680 mu A cm(-2), which is 60-fold larger than that previously reported device using TiO2 as electron transport material with similar architecture. In the p-DSPECs, a remarkable photocurrent of 100 mu A cm(-2) was achieved in a pH = 5.0 acetate buffer solution under a bias potential at 0.05 V vs RHE with platinum as the proton reduction catalyst. A Faradaic efficiency approaching 100% for the H-2 evolution reaction was obtained after photoelectrolysis for 9 h. Importantly, the solution-processed NiO-dye-ZnO photocathode exhibited excellent long-term stability in both p-ssDSCs and p-DSPECs. To the best of our knowledge, this is the first study where a solution-processable, nanoporous NiO-dye-ZnO photocathode is used for both p-ssDSCs and p-DSPECs having both excellent device performance and stability.
Three-dimensional Nano-Heterojunction Networks: a Highly Performing Structure for Fast Visible-Blind UV Photodetectors.

Noushin Nasiri,Renheng Bo,Lan Fu,Antonio Tricoli

DOI: https://doi.org/10.1039/c6nr08425g

IF: 6.7

2017-01-01

Nanoscale

Abstract:Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10-11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.
Self-powered and High Responsivity Photodetector Based on a N-Si/p-gate Heterojunction.

Yali Liu,Xiaoxiang Wu,Wenxuan Guo,Mengge Li,Xinyue Niu,Jiadong Yao,Ying Yu,Boran Xing,Xiaoyuan Yan,Shucheng Zhang,Jian Sha,Yewu Wang

DOI: https://doi.org/10.1088/1361-6528/abea39

IF: 3.5

2021-01-01

Nanotechnology

Abstract:Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W-1and a fast response time of 20μs at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 1012Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.
Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range

Ratneshwar Kumar Ratnesh,Mrityunjay Kumar Singh,Jay Singh

DOI: https://doi.org/10.1007/s10854-024-12516-5

2024-04-13

Journal of Materials Science Materials in Electronics

Abstract:This study outlines strategies for the development of an ultra-high responsivity wide band ZnO/Si-based heterojunction photodetector (PD). The incorporation of a UV-enhanced Si-Photodiode introduces a novel approach to enhance PD performance and functionality, offering potential building blocks for innovative optoelectronic devices. The ZnO/Si heterojunction proves effective in modulating the generation, separation, and recombination of photo-generated electron–hole pairs throughout the optoelectronic process. Notably, the ZnO/Si PD operates across a wide spectral range, from ultraviolet to infrared, demonstrating enhanced quantum efficiency, responsivity, and detectivity, coupled with a reduction in dark current. Additionally, system parameters such as thickness, wavelength of activity, and bias voltage have been simulated to elucidate the electrical and optical characteristics of the heterojunction PD.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Investigation of n-ZnO/p-porous GaAs/p++-GaAs heterostructure for photodetection applications

Amira Lebib,Lotfi Beji,Nejeh Hamdaoui

DOI: https://doi.org/10.1007/s11082-023-06256-9

IF: 3

2024-02-14

Optical and Quantum Electronics

Abstract:In this work, we have investigated n-ZnO/p-porous GaAs/p ++ -GaAs heterostructure for low-cost photodetector applications. Solution-based deposition process was used to synthesize ZnO thin film on porous GaAs layer formed by anodic etching. Energy dispersive x-ray spectroscopy (EDX) was used for chemical characterization and revealed that the deposited ZnO film was oxygen rich. Scanning electron microscopy (SEM) analysis demonstrated a porous surface morphology of the ZnO film and the infiltration of a part of the deposited film inside the porous GaAs matrix. The transport mechanisms of the n-ZnO/p-porous_GaAs/p ++ -GaAs heterostructure were investigated via current–voltage ( I–V ) measurements in the dark at room temperature. I – V characteristic showed rectification behavior, and the maximum value of the rectification ratio is 53 at ± 1.78 V. A series resistance R s = 15 Ω and an ideality factor, n = 8, were obtained by using the Cheung function. The Forward I–V curve in Log–Log scales follows a power law dependence characteristic of trap-assisted space charge limited conduction. In the reverse bias voltages, we found that the thermionic emission theory in the presence of an interface layer reproduces the current–voltage characteristic. A potential barrier height of = 580 meV and an ideality factor n = 1.06 were obtained. For more investigations, we carried out impedance spectroscopy measurements. From the Cole–Cole impedance curves of the reverse-biased device, we demonstrated the formation of two depletion regions operating in opposite directions to the applied voltage. Conductance-frequency ( G-f ) experimental results agree with Jonsher's law, proving that charge transport processes across device interfaces occur by jumping between localized states. The analysis of I–V characteristic under illumination demonstrates that the n-ZnO/p-porous GaAs/p ++ -GaAs device can be used for photodetection applications. The measured photocurrent reaches a value of 39 mA for an applied voltage of 1.48 V. The photocurrent spectrum showed a signal without applied voltage and confirmed the presence of an internal electric field that self-polarizes the device.

engineering, electrical & electronic,optics,quantum science & technology

A Solution-Processed High-Efficiency P-Nio/n-zno Heterojunction Photodetector

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

Engineering of Interfacial Electron Transfer from Donor-Acceptor Type Organic Semiconductor to Zno Nanorod for Visible-Light Detection

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films.

Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

High Performance Charge-Transfer Induced Homojunction Photodetector Based on Ultrathin ZnO Nanosheet

Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

Facile Assembly of N-Sno(2) Nanobelts-P-nio Heterojunctions with Enhanced Ultraviolet Photoresponse.

Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell

p-(001)NiO/n-(0001)ZnO Heterostructures based Ultraviolet Photodetectors

Fast and High-Performance Self-Powered Photodetector Based on the ZnO/Metal-Organic Framework Heterojunction

Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications

Highly stable and sensitive photoelectrochemical photodetectors based on a ZnO nanorod/monolayer MoS 2 nanosheets heterostructure

Fully Solution-Processed ZnO Nanorod Array/PEDOT:PSS Heterojunction Photodetector for Ultraviolet Light

Construction of g-C3N4/SnSe2/H-TiO2 Ternary Heterojunction for High-Performance Photodetectors

Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors

Solution-processed Nanoporous NiO-dye-ZnO Photocathodes: Toward Efficient and Stable Solid-State P-Type Dye-Sensitized Solar Cells and Dye-Sensitized Photoelectrosynthesis Cells

Three-dimensional Nano-Heterojunction Networks: a Highly Performing Structure for Fast Visible-Blind UV Photodetectors.

Self-powered and High Responsivity Photodetector Based on a N-Si/p-gate Heterojunction.

Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range

Investigation of n-ZnO/p-porous GaAs/p++-GaAs heterostructure for photodetection applications