Few-layer MoS_2 Grown by Chemical Vapor Deposition As a Passive Q-switcher for Tunable Erbium-Doped Fiber Lasers

Handing Xia,Heping Li,Changyong Lan,Chun Li,Jinbo Du,Shangjian Zhang,Yong Liu
DOI: https://doi.org/10.1364/prj.3.000a92
IF: 7.6
2015-01-01
Photonics Research
Abstract:We report an erbium-doped fiber laser passively Q-switched by a few-layer molybdenum disulfide(MoS 2 ) saturable absorber(SA).The few-layer MoS 2 is grown by the chemical vapor deposition method and transferred onto the end-face of a fiber connector to form a fiber-compatible MoS 2 SA.The laser cavity is constructed by using a three-port optical circulator and a fiber Bragg grating(FBG) as the two end-mirrors.Stable Q-switched pulses are obtained with a pulse duration of 1.92 μs at 1560.5 nm.By increasing the pump power from 42 to 204 mW,the pulse repetition rate can be widely changed from 28.6 to 114.8 kHz.Passive Q-switching operations with discrete lasing wavelengths ranging from 1529.8 to 1570.1 nm are also investigated by using FBGs with different central wavelengths.This work demonstrates that few-layer MoS 2 can serve as a promising SA for wideband-tunable Q-switching laser operation.
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