Preparation and Luminescent Properties of Upright Zn2GeO4/ZnO Nanorod Arrays

李婷,方芳,周政,赵海峰,方铉,李金华,楚学影,魏志鹏,房丹
DOI: https://doi.org/10.3788/fgxb20143510.1188
2014-01-01
Chinese Journal of Luminescence
Abstract:Upright Zn2GeO4/ZnO nanorod arrays were prepared on silicon wafer with two kinds of seed layers (metal Au and ZnO seed) by the chemical vapor deposition(CVD) method. Scanning electron microscopy (SEM), X-ray diffractometer (XRD) and photoluminescence (PL) measurements were used to characterize the samples and reaseach its luminescence properties. The results show that the radius of Zn2GeO4/ZnO nanorod is 350-400 nm and the length is 10-11 m. The photoluminescence spectrum (PL) of Zn2GeO4 nanorods exhibites three fluorescence emission peaks centered at 415,445,488 nm. Moreover, a detailed description of the probable growth mechanism of the upright Zn2GeO4/ZnO nanorod arrays was discussed. Its vertical orientation is desirable for use in optoelectronic field.
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