Stabilizing Reconstruction Induced by O Protrusions of the ZnO (0001) Polar Surface

Yu Li,Bolong Huang,Rui-Qin Zhang,Zijing Lin,Michel A. Van Hove

DOI: https://doi.org/10.1039/c4ra11436a

IF: 4.036

2014-01-01

RSC Advances

Abstract:We demonstrated O extrusion to be a universal reconstruction behavior on the Zn-terminated (0001) surface (with or without terraces) to compensate the well-known instability of such a polar surface.

What problem does this paper attempt to address?

Counterintuitive Reconstruction of the Polar O-Terminated ZnO Surface With Zinc Vacancies and Hydrogen

Ryan Jacobs,Bing Zheng,Brian Puchala,Paul M. Voyles,Andrew B. Yankovich,Dane Morgan

DOI: https://doi.org/10.1021/acs.jpclett.6b02174

2017-02-01

Abstract:Understanding the structure of ZnO surface reconstructions and their resultant properties is crucial to the rational design of ZnO-containing devices ranging from optoelectronics to catalysts. Here, we are motivated by recent experimental work which showed a new surface reconstruction containing Zn vacancies ordered in a Zn(3x3) pattern in the subsurface of (0001)-O terminated ZnO. A reconstruction with Zn vacancies on (0001)-O is surprising and counterintuitive because Zn vacancies enhance the surface dipole rather than reduce it. In this work, we show using Density Functional Theory (DFT) that subsurface Zn vacancies can form on (0001)-O when coupled with adsorption of surface H and are in fact stable under a wide range of common conditions. We also show these vacancies have a significant ordering tendency and that Sb-doping created subsurface inversion domain boundaries (IDBs) enhances the driving force of Zn vacancy alignment into large domains of the Zn(3x3) reconstruction.

Materials Science
A Method to Stabilize the Unreconstructed MgO (111) Polar Surface

Simon Godin,Bruce A. Davidson,Ronny Sutarto,Chong Liu,Fengmiao Li,Ilya S. Elfimov,George A. Sawatzky,Ke Zou

DOI: https://doi.org/10.1063/5.0096334

IF: 4

2022-01-01

Applied Physics Letters

Abstract:The choice and quality of single-crystal substrates for epitaxial thin film growth drastically influence the properties of the synthesized films. Among them, high-quality substrates with a polar surface are particularly difficult to prepare due to their inherent structural instability against electrostatic forces of the polar discontinuity. As a commonly used insulating substrate, the (111) cut of MgO shows alternating planes of Mg2+ and O2− that form a hexagonal unit cell at the surface, which is useful for thin films with similar crystal symmetries. We present a method to prepare such a surface by first introducing (3×3)R30° reconstructed MgO (111) surface via face-to-face annealing in an O2 environment. We then dissolve the top layers in acid to achieve an unreconstructed and also passivated surface. The structure, stoichiometry, and stability of the resulting surfaces are characterized. This work provides an easy and reliable way to prepare a MgO (111) polar surface ready for subsequent epitaxial growth.
Reversible wurtzite-tetragonal reconstruction in ZnO(1010) surfaces.

Mo-Rigen He,Rong Yu,Jing Zhu

DOI: https://doi.org/10.1002/anie.201202598

2012-01-01

Abstract:Bistable surface: The reversible phase transition between wurtzite (WZ) and body-centered-tetragonal (BCT) lattice was activated in ZnO(1010) surfaces and directly imaged at atomic scale by using aberration-corrected electron microscopy. A nucleation-growth mechanism for the surface reconstruction is further proposed based on observations and calculations of the WZ-BCT domain boundary.
Atomic reconstructions and dynamic-evolutionary pathways on a polar surface of a wurtzite ionic crystal: Ga-doped ZnO(0001)

Hua Zhou,Xiao D. Wang,Ming C. Xu,Yi L. Wang,Shu J. Hu,Li H. Bai,Shi S. Yan

DOI: https://doi.org/10.1016/j.apsusc.2023.158993

IF: 6.7

2023-11-27

Applied Surface Science

Abstract:Preparing atomic reconstructions and tracking their evolutionary pathways on polar surfaces of wurtzite ionic crystals remain a big challenge in surface science. Here, we addressed this challenge by introducing Ga surface segregation through Ar + bombardment and subsequent annealing treatment. By employing ZnO(0001) surface as a model system for wurtzite ionic crystals, we generated various atomic reconstructions and observed three distinct evolutionary pathways. These pathways involved complex dynamic processes including atom desorption and movement, and each pathway started with a disordered surface and ended with a (2 × 8) reconstruction. Tracking all the pathways, the overall reconstruction route can be put in order as "disorder → (√3 × √3)R30° → (2 × 2) → (2 × 4) → (2 × 8)", as the surface Ga concentration is increased. These atomic reconstructions are proposed to originate from the alternations in the valence state of cation and the influence of surface segregation on the vacant states of dangling bonds. Our discoveries present a comprehensive framework for generating a multitude of atomic reconstructions and elucidating their evolutionary pathway on intricate polar surfaces of wurtzite ionic crystals.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
In Situ Resolving the Atomic Reconstruction of SnO2 (110) Surface

Guanxing Li,Songda Li,Zhong-Kang Han,Chen Zou,Hanglong Wu,Wentao Yuan,Beien Zhu,Yi Gao,Hangsheng Yang,Ze Zhang,Yong Wang

DOI: https://doi.org/10.1021/acs.nanolett.1c02501

IF: 10.8

2021-01-01

Nano Letters

Abstract:Understanding surface reconstruction of nanocrystals is of great importance to their applications, however it is still challenging due to lack of atomic-level structural information under reconstruction conditions. Herein, through in situ spherical aberration corrected scanning transmission electron microscopy (STEM), the reconstruction of nanocrystalline SnO2 (110) surface was studied. By identifying the precise arrangements of surface/subsurface Sn and O columns through both in situ bright-field and high-angle annular dark-field STEM images, an unexpected added Sn2O model was determined for SnO2 (110)-(1 × 2) surface. The protruded Snδ+ of this surface could act as the active sites for activating O2 molecules according to our density functional theory (DFT) calculations. On the basis of in situ observation of atomic-level reconstruction behaviors and DFT calculations, an energy-driven reconstruction process was also revealed. We anticipate this work would help to clarify the long-standing debate regarding the reconstruction of SnO2 (110) surface and its intrinsic property.
In Situ Resolving the Atomic Reconstruction of SnO 2 (110) Surface

Guanxing Li,Songda Li,Zhong-Kang Han,Chen Zou,Hanglong Wu,Wentao Yuan,Beien Zhu,Yi Gao,Hangsheng Yang,Ze Zhang,Yong Wang

DOI: https://doi.org/10.1021/acs.nanolett.1c02501

IF: 10.8

2021-08-19

Nano Letters

Abstract:Understanding surface reconstruction of nanocrystals is of great importance to their applications, however it is still challenging due to lack of atomic-level structural information under reconstruction conditions. Herein, through in situ spherical aberration corrected scanning transmission electron microscopy (STEM), the reconstruction of nanocrystalline SnO2 (110) surface was studied. By identifying the precise arrangements of surface/subsurface Sn and O columns through both in situ bright-field and high-angle annular dark-field STEM images, an unexpected added Sn2O model was determined for SnO2 (110)-(1 × 2) surface. The protruded Snδ+ of this surface could act as the active sites for activating O2 molecules according to our density functional theory (DFT) calculations. On the basis of in situ observation of atomic-level reconstruction behaviors and DFT calculations, an energy-driven reconstruction process was also revealed. We anticipate this work would help to clarify the long-standing debate regarding the reconstruction of SnO2 (110) surface and its intrinsic property.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02501.Additional details about the sample preparation, sample characterization, DFT calculations, and image simulation, including Figures S1–S8, Tables S1–S2, and the fractional coordinates of the main optimized surface models (Sn2O, Sn2O3, Sn2O4-iv, Sn2O4-ih, Sn2O2-iv, Sn2O2-ih, and the intermediate state) in POSCAR files (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

Rui Zhu,Qing Zhao,Jun Xu,Li Chen,Yamin Leprince-Wang,Dapeng Yu

DOI: https://doi.org/10.1039/c2ce26567b

IF: 3.756

2013-01-01

CrystEngComm

Abstract:The formation mechanism of experimentally observed epitaxial morphologies on ( 000 +/- 1) polar surfaces of ZnO microwire was studied by density functional theory simulation of atomic step models on both polar surfaces. In situ observations by environmental scanning electron microscopy were employed to control and detect the morphology evolutions during the epitaxial growth process. Edge formation energies for representative step models were calculated as a function of Zn chemical potential. The energetically favorable step structures were determined under different conditions, which could be related to certain surface morphologies regarding the aspects of crystallography and growth kinetics. Our experiments can be well explained by theoretical simulations.
Direct Observation of Atomic Step‐Assisted Stabilization of Polar Surface

Zhipeng Wang,Jinho Byun,Zhen Wang,Yaolong Xing,Jinsol Seo,Jaekwang Lee,Sang Ho Oh

DOI: https://doi.org/10.1002/adma.202303051

IF: 29.4

2023-06-27

Advanced Materials

Abstract:Polar surface is intrinsically unstable and thus highly reactive due to the uncompensated surface charges. The charge compensation is accompanied by various surface reconstructions, establishing novel functionality for its applications. Our in‐situ atomic‐scale electron microscopy study directly shows that the atomic step and step‐assisted reconstruction play central roles in the charge compensation of polar oxide surface. The flat (LaO)+‐terminated LaAlO3 (001) polar surface, when annealed at high temperature in vacuum, transits to the (015) vicinal surface via the dynamic motion and interaction of atomic steps. While the (015) vicinal surface possesses zero polarization along the surface normal, the thermodynamic ground state is achieved when the in‐plane polarization is fully compensated via the reconstruction of step edge atoms; the step edge La atoms are displaced from their ordinary atomic sites toward the adjacent Al step edge site, resulting in the formation of negatively charged La vacancy at the corresponding step edges. As confirmed by first‐principles calculations, the observed step reconstruction of (015) vicinal surface can completely cancel both out‐of‐plane and in‐plane electric fields. This hitherto unknown mechanism reveals the central role of step reconstruction in stabilizing polar surfaces, providing valuable insights for understanding the novel charge compensation mechanism accompanied by the step reconstruction. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A First-Principles Study Of Zno Polar Surface Growth: Adsorption Of Znxoy Clusters

Zhunzhun Wang,Nan Pan,Zhenyu Li,Jinlong Yang

DOI: https://doi.org/10.1063/1.4821749

2013-01-01

Abstract:Adsorption of ZnxOy (x + y = 1-6) clusters on ZnO (000 +/- 1) polar surfaces is studied systematically via density function theory (DFT) calculations. Different adsorption behaviors are predicted for these two surfaces. On the (0001)-Zn surface, O atoms adsorb on hollow sites at the initial stage. Then Zn atoms come in, and the stable structure becomes bulk-like for some specific clusters. On the (000 (1) over bar)-O surface, Zn cluster adsorption leads to stable cage structures formed by pulling substrate O out. In clusters with both Zn and O, O atoms avoid directly bonding with the surface, and no energetically favorable bulk-like structure is found. On the basis of the prediction of these surface adsorption behaviors, experimentally observed growth rate and surface roughness differences on these two polar surfaces can be understood. (C) 2013 AIP Publishing LLC.
Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

Wei-dong Dou,Han-jie Zhang

DOI: https://doi.org/10.1088/1674-0068/23/01/18-22

IF: 1.09

2010-01-01

Chinese Journal of Chemical Physics

Abstract:The reconstructed structures of Cu(100) surface induced by O2 dissociative adsorption were investigated by low energy electron diffraction and scanning tunneling microscopy. At lower oxygen coverage, it was found that two reconstructed structures, i.e. c(2×2)-O and (√2×2√2)R45°-O are coexistent. The domain size of the c(2×2)-O structure decreased with the increasing of O2 exposure. The reconstructed structure at very small coverage was also investigated and a “zigzag" structure was observed at this stage. The “zigzag" structure was identified as boundaries of local c(2×2) domains. It was found that the strip region shows much stronger molecule-substrate interaction than that of oxygen covered regions, making it a proper template for patterned organic films. The sequence of the thermal stability was found as zigzag structure>c(2×2)>(√2×2√2)R45°-O.
Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Minhui Hu,Qinghua Zhang,Lin Gu,Qinlin Guo,Yanwei Cao,M. Kareev,J. Chakhalian,Jiandong Guo

DOI: https://doi.org/10.1063/1.5006298

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of atomically sharp interfaces. Here, by taking the LaCoO3/SrTiO3(111) as a prototype, we show that the reconstruction, which effectively compensates the surface polarity, can stabilize the epitaxy of the heterostructure with polar discontinuity. Reconstructed substrate surface is prepared, while the growth is controlled to form reconstruction on the film surface. To suppress the chemical diffusion across the interface, the growth is interrupted between each unit cell layer to allow the lattice relaxation at a lowered temperature. In this way, high quality two-dimensional growth is realized and the heterointerfaces exhibit sharpness at the atomic scale. Our work provides a path to precisely control the growth of complex oxide heterostructures along polar orientations that exhibit emergent quantum phenomena.
Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Peng Gao,Heng-Jui Liu,Yen-Lin Huang,Ying-Hao Chu,Ryo Ishikawa,Bin Feng,Ying Jiang,Naoya Shibata,En-Ge Wang,Yuichi Ikuhara

DOI: https://doi.org/10.1038/ncomms11318

IF: 16.6

2016-01-01

Nature Communications

Abstract:At the ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic configurations. Experimentally revealing the atomic structure of ferroelectric surface, however, is very challenging due to the strong spatial variety between nano-sized domains, and strong interactions between the polarization and other structural parameters. Here, we study surface structures of Pb(Zr0.2Ti0.8)O3 thin film by using the annular bright-field imaging. We find that six atomic layers with suppressed polarization and a charged 180° domain wall are at negatively poled surfaces, no reconstruction exists at positively poled surfaces, and seven atomic layers with suppressed polarization and a charged 90° domain wall exist at nominally neutral surfaces in ferroelastic domains. Our results provide critical insights into engineering ferroelectric thin films, fine grain ceramics and surface chemistry devices. The state-of-the-art methodology demonstrated here can greatly advance our understanding of surface science for oxides.
Controlling the Facet of ZnO During Wet Chemical Etching Its (0001¯) O‐Terminated Surface

Mei Sun,Bocheng Yu,Mengyu Hong,Zhiwei Li,Fengjiao Lyu,Xing Li,Zhihong Li,Xianlong Wei,Zheng Zhang,Yue Zhang,Qing Chen

DOI: https://doi.org/10.1002/smll.201906435

IF: 13.3

2020-01-01

Small

Abstract:Special surface plays a crucial role in nature as well as in industry. Here, the surface morphology evolution of ZnO during wet etching is studied by in situ liquid cell transmission electron microscopy and ex situ wet chemical etching. Many hillocks are observed on the (0001 over bar ) O-terminated surface of ZnO nano/micro belts during in situ etching. Nanoparticles on the apex of the hillocks are observed to be essential for the formation of the hillocks, providing direct experimental evidence of the micromasking mechanism. The surfaces of the hillocks are identified to be {011 over bar 3 over bar } crystal facets, which is different from the known fact that {011 over bar 1 over bar } crystal facets appear on the (0001 over bar ) O-terminated surface of ZnO after wet chemical etching. O-2 plasma treatment is found to be the key factor for the appearance of {011 over bar 3 over bar } instead of {011 over bar 1 over bar } crystal facets after etching for both ZnO nano/micro belts and bulk materials. The synergistic effect of acidic etching and O-rich surface caused by O-2 plasma treatment is proposed to be the cause of the appearance of {011 over bar 3 over bar } crystal facets. This method can be extended to control the surface morphology of other materials during wet chemical etching.
First-principles study of the polar O-terminated ZnO surface in thermodynamic equilibrium with oxygen and hydrogen

B. Meyer

DOI: https://doi.org/10.1103/PhysRevB.69.045416

2003-02-27

Abstract:Using density-functional theory in combination with a thermodynamic formalism we calculate the relative stability of various structural models of the polar O-terminated (000-1)-O surface of ZnO. Model surfaces with different concentrations of oxygen vacancies and hydrogen adatoms are considered. Assuming that the surfaces are in thermodynamic equilibrium with an O2 and H2 gas phase we determine a phase diagram of the lowest-energy surface structures. For a wide range of temperatures and pressures we find that hydrogen will be adsorbed at the surface, preferentially with a coverage of 1/2 monolayer. At high temperatures and low pressures the hydrogen can be removed and a structure with 1/4 of the surface oxygen atoms missing becomes the most stable one. The clean, defect-free surface can only exist in an oxygen-rich environment with a very low hydrogen partial pressure. However, since we find that the dissociative adsorption of molecular hydrogen and water (if also the Zn-terminated surface is present) is energetically very preferable, it is very unlikely that a clean, defect-free (000-1)-O surface can be observed in experiment.

Materials Science
Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Yuan Hong-Tao,Liu Yu-Zi,Wang Xi-Na,Li Han-Dong,Yong Wang -,Zeng Zhao-Quan,Mei Zeng-Xia,Du Xiao-Long,Jia Jin-Feng,Xue Qi-Kun,Ze Zhang

DOI: https://doi.org/10.1088/0256-307X/24/8/069

2007-01-01

Chinese Physics Letters

Abstract:The controlled growth of Zn-polar ZnO films on Al-terminated alpha-Al2O3 (0001) substrates is investigated by the radio-frequency plasma-assisted molecular beam epitaxy method. Prior to growth, alpha-Al2O3 (0001) surface is modified by an ultrathin MgO layer, which serves as a uniform template for epitaxy of Zn-polar ZnO folms. The microstructures of ZnO/MgO/Al2O3 interface are investigated by in-situ reflection high-energy electron diffraction observations and ex-situ high-resolution transmission electron microscopy charecterization. It is found that under Mg-rich condition, the achievement of the wurtzite MgO ultrathin layers plays a key role in the subsequent growth of Zn-polar ZnO. An interfacial atomic model is proposed to explain the mechanism of polarity selection of both Mgo and ZnO films.
Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

Ran Gu,Kun Tang,Shulin Gu,Jiandong Ye,Shimin Huang,Zhengrong Yao,Shunming Zhu,Youdou Zheng

DOI: https://doi.org/10.1016/j.apsusc.2015.11.131

IF: 6.7

2015-01-01

Applied Surface Science

Abstract:We have grown ZnO films on Zn-polar and O-polar ZnO substrates pretreated at different temperature by metal-organic chemical vapor deposition. Generally, the Zn-polar samples have better structural and optical properties than the O-polar samples. We also found that the Zn-polar samples have a great performance on the suppression of the unintentionally doped carbon impurities. The sample grown on the 1000 degrees C-pretreated ZnO substrate has clearly showed a step-flow growth mode with the surface roughness as low as 2.654 nm, which could be regarded as the best growth condition. (C) 2015 Elsevier B.V. All rights reserved.
Chemical Intermixing at Oxide Heterointerfaces with Polar Discontinuity

Yan Liang,Yade Wang,Lixia Liu,Qinlin Guo,Weihua Wang,Hao Yang,Jiandong Guo

DOI: https://doi.org/10.1063/1.5027796

IF: 4

2018-01-01

Applied Physics Letters

Abstract:The stability of the (4 × 4) reconstruction is studied on SrTiO3(111) and LaTiO3(111) surfaces by scanning tunneling microscopy. While the reconstruction may effectively compensate the surface polarity, the associated large lattice distortion on SrTiO3 with relatively strong polarity has to be relaxed by extra adsorbates. Alternatively, substituting Sr by La can reduce the polarity and stabilize the clean reconstructed surface. This provides the driving force for La segregating towards the surface during the heteroepitaxy of SrTiO3 on LaTiO3-covered SrTiO3(111), and thus, the interface sharpness will be deteriorated. To improve the quality of heterointerfaces where the surface polarity of substrates tends to be increased by the epitaxial films, the growth kinetics must be optimized to play the major role.
In situ study of the electronic structure of polar-to-polar SrTiO3/(000 1 ̅ )ZnO heterointerface

Hua Zhou,Hui-Qiong Wang,Jin-Cheng Zheng,Xiao-Dan Wang,Yufeng Zhang,Junyong Kang,Lihua Zhang,Kim Kisslinger,Rui Wu,Jia-Ou Wang,Hai-Jie Qian,Kurash Ibrahim

DOI: https://doi.org/10.1016/j.rinp.2021.104827

IF: 4.565

2021-11-01

Results in Physics

Abstract:The SrTiO3(STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic devices, is a classical system combining functional perovskite oxides and wurtzite-structure semiconductor materials. The electronic structure of the heterointerface often plays a significant role in controlling the functions of novel devices. In this study, the electronic structure was explored using in situ photoemission spectroscopy and X-ray absorption spectroscopy. X-ray diffraction results showed the coexistence of (111)STO and (011)STO orientations for the STO film deposited on the ZnO-(000 1 - ) substrate via pulsed laser deposition. High-resolution transmission electron microscopic results revealed two types of polar interfaces: [11 2 - ][10 1 - ](111)STO//[1 2 - 10][10 1 - 0](000 1 - )ZnO and [111][2 1 - 1 - ](011)STO//[10 2 - 1 ][10 1 - 0](000 1 - )ZnO. In situ photoemission spectroscopic results revealed downward band bending and the transformation of the valence states of Ti from 4+ to 3+, with extra electrons transferring to the hybridization states between O 2p and Ti t2g orbitals at the polar-to-polar STO/ZnO interface. We propose that the polar discontinuity drives the electron transfer to the STO/ZnO interface during the growth process. This study provides insight into the electronic structure of the STO/(000 1 - )ZnO heterointerface.

physics, multidisciplinary,materials science
Stabilization of Semiconductor Surfaces Through Bulk Dopants

Nikolaj Moll,Yong Xu,Oliver T. Hofmann,Patrick Rinke

DOI: https://doi.org/10.1088/1367-2630/15/8/083009

2013-01-01

New Journal of Physics

Abstract:We show by employing density-functional theory calculations (including a hybrid functional) that ZnO surfaces can be stabilized by bulk dopants. As an example, we study the bulk-terminated ZnO (000 (1) over bar) surface covered with half a monolayer of hydrogen. We demonstrate that deviations from this half-monolayer coverage can be stabilized by electrons or holes from bulk dopants. The electron chemical potential therefore becomes a crucial parameter that cannot be neglected in semiconductor surface studies. As one result, we find that to form the defect-free surface with a half-monolayer coverage of hydrogen for n-type ZnO, ambient hydrogen background pressures are more conducive than high vacuum pressures.
Structural and spin state transition in the polar NiO(111) surface

Wandong Xing,Yang Zhang,Jing Zhu,Rong Yu

DOI: https://doi.org/10.1016/j.apsusc.2020.147427

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:Geometric and electronic structure of surfaces is of fundamental importance for the understanding of the physical and chemical phenomena of transition metal oxides. Here we report a structural and spin state transition in the NiO(111) surface. Combining aberration-corrected transmission electron microscopy and first-principles calculations, we show that the surface can be stabilized in a bulk-truncated structure and a subsurface tetrahedral reconstructed one, both with a (1 x 1) periodicity and the hydroxylation ruled out. The transition from the bulk-truncation to the tetrahedral reconstruction is accomplished by the shift of the subsurface Ni atoms from octahedral to tetrahedral position, accompanied by a spin transition from a low-spin state to a high-spin state.

Stabilizing Reconstruction Induced by O Protrusions of the ZnO (0001) Polar Surface

Counterintuitive Reconstruction of the Polar O-Terminated ZnO Surface With Zinc Vacancies and Hydrogen

A Method to Stabilize the Unreconstructed MgO (111) Polar Surface

Reversible wurtzite-tetragonal reconstruction in ZnO(1010) surfaces.

Atomic reconstructions and dynamic-evolutionary pathways on a polar surface of a wurtzite ionic crystal: Ga-doped ZnO(0001)

In Situ Resolving the Atomic Reconstruction of SnO2 (110) Surface

In Situ Resolving the Atomic Reconstruction of SnO 2 (110) Surface

Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

Direct Observation of Atomic Step‐Assisted Stabilization of Polar Surface

A First-Principles Study Of Zno Polar Surface Growth: Adsorption Of Znxoy Clusters

Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Controlling the Facet of ZnO During Wet Chemical Etching Its (0001¯) O‐Terminated Surface

First-principles study of the polar O-terminated ZnO surface in thermodynamic equilibrium with oxygen and hydrogen

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

Chemical Intermixing at Oxide Heterointerfaces with Polar Discontinuity

In situ study of the electronic structure of polar-to-polar SrTiO3/(000 1 ̅ )ZnO heterointerface

Stabilization of Semiconductor Surfaces Through Bulk Dopants

Structural and spin state transition in the polar NiO(111) surface