Flexible Quantum Dot Light Emitting Diodes Based on ZnO Nanoparticles

Jiangyong Pan,Jing Chen,Qianqian Huang,Qasim Khan,Xiang Liu,Zhi Tao,Wei Lei,Feng Xu,Zichen Zhang

DOI: https://doi.org/10.1039/c5ra10656g

IF: 4.036

2015-01-01

RSC Advances

Abstract:High performance, mechanically flexible quantum dot light emitting diodes (QLEDs) based on ZnO nanoparticles used as an electron transfer layer (ETL) are reported.

What problem does this paper attempt to address?

Waterproof Flexible InP@ZnSeS Quantum Dot Light‐Emitting Diode

Dong-Wook Shin,Yo-Han Suh,Sanghyo Lee,Bo Hou,Soo Deok Han,Yuljae Cho,Xiang-Bing Fan,Sang Yun Bang,Shijie Zhan,Jiajie Yang,Hyung Woo Choi,Sungmin Jung,Felix C. Mocanu,Hanleem Lee,Luigi Occhipinti,Young Tea Chun,Gehan Amaratunga,Jong Min Kim

DOI: https://doi.org/10.1002/adom.201901362

IF: 9

2020-01-01

Advanced Optical Materials

Abstract:The development of flexible displays for wearable electronics applications has created demand for high‐performance quantum dot (QD) light‐emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)‐based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost‐effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP‐based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS‐based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution‐based amorphous fluoropolymer, is demonstrated. The CYTOP‐encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd m−2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ≈20 min. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications.
Colloidal Nanocrystal-Based Light-Emitting Diodes Fabricated on Plastic - Towards Flexible Quantum Dot Optoelectronics

Zhanao Tan,Jian Xu,Chunfeng Zhang,Ting Zhu,Fan Zhang,Brittany Hedrick,Shawn Pickering,Jian Wu,Huaipeng Su,Shuai Gao,Andrew Y. Wang,Brian Kimball,Jerzy Ruzyllo,Nicholas S. Dellas,Suzanne E. Mohney

DOI: https://doi.org/10.1063/1.3074335

2009-01-01

Abstract:We report the first demonstration of mechanically flexible quantum dot light-emitting-diodes (QD-LEDs) of all three RGB primary colors. The efficiencies of the flexible devices are high, suggesting the intrinsic flexibility of the QD-based optoelectronic devices.
Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Desui Chen,Luying Ma,Yunhua Chen,Xiaoqi Zhou,Shiyu Xing,Yunzhou Deng,Yanlei Hao,Chaodan Pu,Xueqian Kong,Yizheng Jin

DOI: https://doi.org/10.1021/acs.nanolett.2c04670

IF: 10.8

2023-01-01

Nano Letters

Abstract:Thin films of ZnO nanocrystals are actively pursued as electron-transporting layers (ETLs) in quantum-dot light-emitting diodes (QLEDs). However, the developments of ZnO-based ETLs are highly engineering oriented and the design of ZnO-based ETLs remains empirical. Here, we identified a previously overlooked efficiency-loss channel associated with the ZnO-based ETLs: i.e., interfacial exciton quenching induced by surface-bound ethanol. Accordingly, we developed a general surface-treatment procedure to replace the redox-active surface-bound ethanol with electrochemically inert alkali carboxylates. Characterization results show that the surface treatment procedure does not change other key properties of the ETLs, such as the conductance and work function. Our single-variable experimental design unambiguously demonstrates that improving the electrochemical stabilities of the ZnO ETLs leads to QLEDs with a higher efficiency and longer operational lifetime. Our work provides a crucial guideline to design ZnO-based ETLs for optoelectronic devices.
Highly flexible light emitting diodes based on a quantum dots-polymer composite emitting layer

Lu Xue,Yang Liu,Fushan Li,Kai Sun,Wei Chen,Kaiyu Yang,Hailong Hu,Jintang Lin,Huipeng Chen,Zunxian Yang,Tailiang Guo

DOI: https://doi.org/10.1016/j.vacuum.2019.02.033

IF: 4

2019-01-01

Vacuum

Abstract:In this work, we report highly flexible QLEDs based on a quantum dots-polymer composite emitting layer. Conventional quantum dot films exhibit cracks after rough bending. Herein, polymethyl methacrylate (PMMA) was doped into quantum dot solution, acting as binder for neighboring quantum dots. In addition, PMMA can be serving as an electron blocking layer due to its insulating property, and then balancing the charge recombination and improving device performance. The flexible QLEDs have excellent mechanical properties with an ultimate bend radius of 1.5 mm, and they show no significant performance degradation after 500 times bending with radius of 4 mm. The flexible QLEDs exhibit high performance with maximum luminance of 14880 cd/m2 and maximum current efficiency of 21.3 cd/A.
Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Liu Bo-Zhi,Li Rui-Feng,Song Ling-Yun,Hu Lian,Zhang Bing-Po,Chen Yong-Yue,Wu Jian-Zhong,Bi Gang,Wang Miao,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.62.158504

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:We have investigated the light-emitting diodes based on colloidal CdSe quantum dots (QD-LEDs), in which inorganic ZnSnO thin films and organic TPD thin films were used as the electron-transporting layer (ETL) and hole-transporting layer (HTL), respectively. The quantum dots were embedded between the inorganic ETL and organic HTL to form a sandwich structure. ZnSnO ETL was made by magnetron sputtering, while the TPD and QD films were made by spin-coating method. The QD-LEDs display sharp interface and smooth morphology. Optical and electrical characterizations show that QD-LEDs have low turn-on voltage, good monochromaticity, bright electroluminescence and good stability in atmosphere ambient. These characteristics are attributed to the utility of high electron mobility and low carrier concentration of the ZnSnO films used as the ETL. To investigate the device's operation mechanism, the conductivity of ZnSnO was varied during deposition to realize equal injection rate for both electrons and holes, which allows the device to operate optimally.
Flexible Quantum Dot Light Emitting Diodes based on Copper Nanowires/Poly(P-Phenylene Benzobisoxazole) Composite Electrode

Min Yang,Qin Zhang,Wenjing Zhang,Fumeng Ren,Jinlei Feng,Dongfei Gong,Zhongqi Hao,Xia Hai,Fangfang Li,Yubao Zhang

DOI: https://doi.org/10.1088/1742-6596/1637/1/012066

2020-09-01

Journal of Physics: Conference Series

Abstract:Abstract Flexible quantum dot light emitting diodes have attracted widespread attention due to their many advantages such as low cost, color tunability, and high luminance effciency. Among flexible electrodes, copper nanowires have attracted much attention due to their high electrical conductivity, simple fabrication process, and low cost. However, the oxidation and poor film quality of copper nanowires films are the barrier that restrict their practical application. In this paper, polyethylene terephthalate/copper nanowires/poly(p-phenylene benzobisoxazole) composite flexible electrode can solve the problems of oxidation and high surface roughness of copper nanowires, which improves the performance of flexible quantum dot light emitting diodes.
Large-Area Quantum-Dot Light Emitting Diode Arrays with Zno Nanoparticles As Electron Transport/Injection Layer

Khan Qasim,Jing Chen,Feng Xu,Jun Wu,Zhi Li,Wei Lei,Yiping Cui,Jun Xia

DOI: https://doi.org/10.1166/sam.2014.2013

2014-01-01

Science of Advanced Materials

Abstract:This paper reports the large area quantum dots light emitting diodes (QLEDs) that are composed of CdSe/ZnS core/shell quantum dots (QDs) as the light emitting layer (EML), ZnO nanoparticles (NPs) as the electron transport/injection layer (ETL) and organic polymers as the hole transport layer (HTL). By varying the thickness of ETL and EML, the performance of these QLEDs can be tailored/optimized accordingly, which is due to the different injection rate of the holes and electrons caused by the different thicknesses of ZnO and QDs layers. By adjusting the thicknesses of the constituent layers, large area QLED devices (10 cmx10 cm active area, 32x32 pixels) are uniformly developed with decreased leakage current, improved electroluminance efficiency (1 similar to 1.8 cd/A), low turn-on voltages (2 similar to 3.2 V) and saturated emission with the Commission Internationale de l'Enclairage (CIE) coordinates of (0.5134, 0.4868). This is attributed to the better electro-optical device design with well balanced carrier conduction, reduced quenching of QDs emission, and enhanced recombination.
Ultrastable, highly luminescent quantum dot composites based on advanced surface manipulation strategy for flexible lighting-emitting

Lingqing Kong,Lin Zhang,Zhaohui Meng,Chuan Xu,Naibo Lin,Xiang-Yang Liu

DOI: https://doi.org/10.1088/1361-6528/aac39c

IF: 3.5

2018-06-01

Nanotechnology

Abstract:Although quantum dots (QDs) have remarkable potential application in flexible light emitting diodes (LED), the loss of solvent-protected QDs leads to low quantum yield (QY) and poor stability, severely restricting the development. Flexible QD LEDs (Q-LEDs) with three primary colors were fabricated by mixing CdS/ZnS, CdSe@ZnS/ZnS, and CdSe/CdS QDs with polydimethylsiloxane (PDMS) by in situ hydrosilylation based surface manipulation strategy, which endows the device with highly ultrastable and luminescent performance. The surface manipulation strategy mainly includes the control of solvent dosage, purification times of QDs, concentration of QDs in PDMS, and oxidation on the preparation process of the QDs and PDMS composites. The highest QY of CdSe@ZnS/ZnS-PDMS composite is 82.03%, higher than the QY (80%) of the QD solution. After UV bleaching, organic solvents (acetone, ethanol and water), and heating treatment, the QYs of the QDs and PDMS maintain a high value, manifesting their good stability. Q-LED hybrid light-emitting devices were further fabricated by a molding technique demonstrating satisfied current and thermal stability. Flexible Q-LEDs can be expended to other shapes, such as fibers and blocks, indicating the huge potential of QD-polymer composites for light sources and displays etc.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Efficient Flexible Quantum-Dot Light-Emitting Diodes with Unipolar Charge Injection.

Rujing Wang,Ting Wang,Zhihui Kang,Han Zhang,Rongmei Yu,Wenyu Ji

DOI: https://doi.org/10.1364/oe.456449

IF: 3.8

2022-01-01

Optics Express

Abstract:The exfoliation between the electrode film and the adjacent functional layer is still a big challenge for the flexible light emitting diodes, especially for the devices dependent on the direct charge injection from the electrodes. To address this issue, we design a flexible quantum-dot light-emitting diodes (QLEDs) with a charge-generation layer (CGL) on the bottom electrode as the electron supplier. The CGL consisting of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/ZnO can provide sufficient electron injection into the QDs, enabling a balanced charge injection. As a result, the CGL-based QLED exhibits a peak external quantum efficiency 18.6%, over 25% enhancement in comparison with the device with ZnO as the electron transport layer. Moreover, the residual electrons in the ZnO can be pulled back to the PEDOT:PSS/ZnO interface by the storage holes in the CGL, which are released and accelerates the electron injection during the next driving voltage pulse, hence improving the electroluminescence response speed of the QLEDs.
Flexible Quantum Dot Light‐Emitting Device for Emerging Multifunctional and Smart Applications

Qinghong Lin,Yangbin Zhu,Yue Wang,Deli Li,Yi Zhao,Yang Liu,Fushan Li,Wei Huang

DOI: https://doi.org/10.1002/adma.202210385

IF: 29.4

2023-03-09

Advanced Materials

Abstract:Quantum dot light‐emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region, and solution‐processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, we review the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies, and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure‐sensing EL devices, and neural smart EL devices. We also summarize the remaining challenges and make an outlook on the future development of flexible QLEDs. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

Benchang Liu,Luhua Lan,Yaoyao Liu,Hong Tao,Hongmeng Li,Hua Xu,Jianhua Zou,Miao Xu,Lei Wang,Junbiao Peng,Yong Cao

DOI: https://doi.org/10.1016/j.orgel.2019.06.035

IF: 3.868

2019-01-01

Organic Electronics

Abstract:ZnO nanoparticles (NPs) are widely employed as the electron transport layer (ETL) material in quantum dot light-emitting diodes (QLEDs) due to their excellent electron transport properties and inherent stability. However, the unbalanced carrier injection caused by the redundant electron injection is a common phenomenon existing in QLEDs with ZnO ETL. Here, based on the lower electron mobility and shallower lowest unoccupied molecular orbit (LUMO) of most organic electron transport .materials than ZnO NPs, we report a strategy to modulate the electron transporting properties of ZnO NPs by doping organic small molecular electron transport materials. Several kinds of small molecular dopants including LiQ (lithium 8-quinolate), TPBi (1,3,5-tris(N-phenylbenzimidazol-2,yl) benzene), and BPhen (4,7-diphenyl-1,10-phenanthroline) are separately introduced to modify ZnO. The resulting device with LiQ-doped ZnO ETL at a doping ratio of 7 wt% exhibits the optimal performance at peak current efficiency (CE) and external quantum efficiency (EQE) up to 8.07 cd/A and 7.74%, which are about 1.93- and 1.94-fold higher than 4.19 cd/A and 3.98% of the device with pristine ZnO ETL, respectively. The improvement of performances can be mainly attributed to the inhibition of electron injection and interfacial exciton quenching by the use of LiQ-doped ZnO ETLs. This work may offer a promising method for fabricating high performance QLEDs and promote their application development in the display fields.
High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Zhenxing Zhang,Yuxun Ye,Chaodan Pu,Yunzhou Deng,Xingliang Dai,Xiaopeng Chen,Dong Chen,Xuerong Zheng,Yuan Gao,Wei Fang,Xiaogang Peng,Yizheng Jin

DOI: https://doi.org/10.1002/adma.201801387

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.
ZnO/silica Quasi Core/shell Nanoparticles As Electron Transport Materials for High-Performance Quantum-Dot Light-Emitting Diodes

Xudong Jin,Zhengkuan Yun,Guangmei Zhai,Wei Jia,Yanqin Miao,Chunyan Yu,Yongzhen Yang,Hua Wang,Xuguang Liu,Bingshe Xu

DOI: https://doi.org/10.1016/j.ceramint.2023.04.060

IF: 5.532

2023-01-01

Ceramics International

Abstract:Quantum dot light-emitting diodes (QLEDs) are considered as the ideal candidate for next-generation displays, solid-state lighting, and optical communication applications. Although the efficiency of QLEDs has been significantly improved to the level comparable to that of organic light-emitting diodes in recent years, simultaneously achieving high efficiency and high brightness still remains challenging for QLEDs. In this work, we report a facile and effective electron-transport-layer interface control strategy of incorporating 3-aminopropyl triethoxysilane (APTES) into a ZnO nanocrystal-solution to enhance charge injection balance and suppress interfacial exciton quenching via in-situ formation of ZnO/organic silica (hereinafter referred to as ZnO/SiO2) quasi core/shell nanoparticles in the solution, enabling red QLEDs to exhibit a maximum luminance intensity of 261,700 cd m- 2, a peak external quantum efficiency (EQE) of 19.0%, and low efficiency roll-off at high luminance (an EQE up to 16.8% remained at a brightness of 200, 000 cd m-2). Our results demonstrate that substituting quasi core/shell-structured ZnO/SiO2 nanoparticles for traditional ZnO nanocrystals as electron transport materials is a simple and effective means of fabricating QLEDs with both high efficiency and high luminance, which is expected to facilitate the development of QLED technology toward practical applications in lighting, displays and optical communication.
Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO2 as electron transport layers

Jinxing Zhao,Zhongwei Man,Shuaibing Wang,Chaoqi Hao,Zhenzhen Yu,Xu Li,Aiwei Tang

DOI: https://doi.org/10.1364/OL.521324

2024-04-15

Abstract:Next-generation display and lighting based on quantum dot light-emitting diodes (QLEDs) require a balanced electron injection of electron transport layers (ETLs). However, classical ZnO nanoparticles (NPs) as ETLs face inherent defects such as excessive electron injection and positive aging effects, urgently requiring the development of new types of ETL materials. Here, we show that high stability SnO2 NPs as ETL can significantly improve the QLED performance to 100567 cd·m-2 luminance, 14.3% maximum external quantum efficiency, and 13.1 cd·A-1 maximum current efficiency using traditional device structures after optimizing the film thickness and annealing the temperature. Furthermore, experimental tests reveal that by doping Zr4+ ions, the size of SnO2 NPs will reduce, dispersion will improve, and energy level will shift up. As expected, when using Zr-SnO2 NPs as the ETL, the maximum external quantum efficiency can reach 16.6%, which is close to the state-of-the-art QLEDs based on ZnO ETL. This work opens the door for developing novel, to the best of our knowledge, type ETLs for QLEDs.
Mg-Diffusion of ZnO-Based Electron-Transport Layers for Highly Conductive Quantum-Dot Light-Emitting Diodes

Xiaoqi Tang,Siyu He,Yunzhou Deng,Xiuyuan Lu,Xitong Zhu,Wangxiao Jin,Yizheng Jin

DOI: https://doi.org/10.1021/acs.jpclett.3c01465

2023-06-21

Abstract:Quantum-dot light-emitting diodes (QLEDs) show great potential in next-generation display and lighting technologies. Further reducing the resistances of the high-efficiency QLEDs is critical to improving their luminous efficiencies and lowering their power consumption. However, wet-chemistry methods to improve the conductivities of ZnO-based electron-transport layers (ETLs) often lead to trade-offs in the external quantum efficiencies (EQEs) of QLEDs. Here, we report a facile approach toward...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Developing flexible QLEDs using metal oxide and polymer combination

Ali Hassanpour Lima,Davoud Raeyani,Sepideh Alipour Sudmand,Hamid Naghshara,Asghar Asgari

DOI: https://doi.org/10.1016/j.optmat.2024.115041

IF: 3.754

2024-02-08

Optical Materials

Abstract:Quantum dot light-emitting diodes (QLEDs) offer advantages including a wide color gamut, high color purity, high brightness, low turn-on voltage, and thin form for next-generation displays. This article used a unique metal oxide and polymer combination to develop a flexible QLED. CdSe/ZnS quantum dots are synthesized using the hot-injection method, which yielded successful results. To construct the QLED, PEDOT: PSS polymer is used as a hole transport layer, enabling holes to move more efficiently due to its chain structure. The electron transfer layer utilized ZnO, which has high conductivity. Incorporating PDINO as an interlayer between ZnO and QDs in the QLED design resulted in the balanced movement of electrons and holes, reducing the turn-on voltage and increasing the turn-on speed and efficiency. By using this combination, in addition to increasing the turn-on speed of the QLED, its turn-on voltage was reduced from 6 V to 2 V and the output current increased by 0.2 mA. The device is modeled using the finite element method and Scaps-1D software to study the interlayer effect of PDINO. The use of PDINO resulted in a decrease in non-radiative recombinations near the QDs and ETL interface, while slightly enhancing radiative recombination.

materials science, multidisciplinary,optics
High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Yizhe Sun,Weigao Wang,Heng Zhang,Qiang Su,Jiangliu Wei,Pai Liu,Shuming Chen,Shengdong Zhang

DOI: https://doi.org/10.1021/acsami.8b04754

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:ZnO nanoparticles (NPs) are widely used as the electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs) owing to their suitable electrical properties. However, because of the well-aligned conduction band levels, electrons in QDs can be spontaneously transferred to adjacent ZnO NPs, leading to severe exciton dissociation, which reduces the proportion of radiative recombination and deteriorates the device efficiency. In this work, Al-doped ZnO NPs are thoroughly investigated as a replacement of ZnO for QLEDs. The energy band structures of Al-doped ZnO are modified by adjusting the concentration of Al dopants. With the increasing Al content, the work function and the conduction band edge of ZnO are gradually raised, and thus the charge transfer at the interface of QDs/ETL is effectively suppressed. Consequently, the green QLEDs with 10% Al-doped ZnO NPs exhibit maximum current efficiency and external quantum efficiency of 59.7 cd/A and 14.1%, which are about 1.8-fold higher than 33.3 cd/A and 7.9% of the devices with undoped ZnO NPs. Our work suggests that Al-doped ZnO NPs can serve as a good electron transport/injection material in QLEDs and other optoelectronic devices.
Flexible Substrate–Compatible and Efficiency–Improved Quantum–Dot Light–Emitting Diodes with Reduced Annealing Temperature of NiOx Hole–Injecting Layer

Shuai-Hao Xu,Jin-Zhe Xu,Ying-Bo Tang,Shu-Guang Meng,Wei-Zhi Liu,Dong-Ying Zhou,Liang-Sheng Liao

DOI: https://doi.org/10.3390/molecules29122828

IF: 4.6

2024-06-14

Molecules

Abstract:The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum–dot light–emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low–temperature processable charge–injection/–transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole–injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self–assembled dipole modifier called 4–(trifluoromethyl)benzoic acid (4–CF3–BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx–based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule–modified NiOx nanoparticles in flexible optoelectronic devices.

chemistry, multidisciplinary,biochemistry & molecular biology
P‐117: Inverted Quantum Dot Light‐Emitting Diodes with MgZnO Modified Electron Transport Layer

Yizhe Sun,Huiren Peng,Shuming Chen,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.11991

2017-01-01

Abstract:Inverted quantum‐dot light‐emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated. Consequently, maximum current efficiency of 11.5 cd/A is achieved and a 36% improvement of external quantum efficiency (EQE) is also obtained in comparison with conventional devices without MgZnO modification layer.
Quantum dot light-emitting diodes with an Al-doped ZnO anode.

Xiaohong Jiang,Guo Liu,Liping Tang,Anzhen Wang,Yu Tian,Aqiang Wang,Zuliang Du

DOI: https://doi.org/10.1088/1361-6528/ab7ceb

IF: 3.5

2020-01-01

Nanotechnology

Abstract:A study of hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. A Kelvin probe force microscopy measurement showed that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by hole-only devices. AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes' injection, and result in an improved charge balance. The maximum current efficiency, luminance, and external quantum efficiency of the optimized QLED devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd A(-1), 102 500 cd m(-2), and 12.94%, respectively.

Flexible Quantum Dot Light Emitting Diodes Based on ZnO Nanoparticles

Waterproof Flexible InP@ZnSeS Quantum Dot Light‐Emitting Diode

Colloidal Nanocrystal-Based Light-Emitting Diodes Fabricated on Plastic - Towards Flexible Quantum Dot Optoelectronics

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Highly flexible light emitting diodes based on a quantum dots-polymer composite emitting layer

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Flexible Quantum Dot Light Emitting Diodes based on Copper Nanowires/Poly(P-Phenylene Benzobisoxazole) Composite Electrode

Large-Area Quantum-Dot Light Emitting Diode Arrays with Zno Nanoparticles As Electron Transport/Injection Layer

Ultrastable, highly luminescent quantum dot composites based on advanced surface manipulation strategy for flexible lighting-emitting

Efficient Flexible Quantum-Dot Light-Emitting Diodes with Unipolar Charge Injection.

Flexible Quantum Dot Light‐Emitting Device for Emerging Multifunctional and Smart Applications

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

ZnO/silica Quasi Core/shell Nanoparticles As Electron Transport Materials for High-Performance Quantum-Dot Light-Emitting Diodes

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO2 as electron transport layers

Mg-Diffusion of ZnO-Based Electron-Transport Layers for Highly Conductive Quantum-Dot Light-Emitting Diodes

Developing flexible QLEDs using metal oxide and polymer combination

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Flexible Substrate–Compatible and Efficiency–Improved Quantum–Dot Light–Emitting Diodes with Reduced Annealing Temperature of NiOx Hole–Injecting Layer

P‐117: Inverted Quantum Dot Light‐Emitting Diodes with MgZnO Modified Electron Transport Layer

Quantum dot light-emitting diodes with an Al-doped ZnO anode.