Abstract:Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71dB in high-gain mode and 108 electrons for 79dB in low-gain mode.

Extended-wavelength 640 × 1 Linear InGaAs Detector Arrays Using N-on-P Configuration for Back Illumination

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Development of a High Performance 1280×1024 InGaAs SWIR FPA Detector at Room Temperature

320×256 Extended Wavelength In x Ga 1-x As/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise

Ultra-Broadband Ultraviolet–Visible Light–Short Wavelength Infrared InGaAs Focal Plane Arrays via n-InP Contact Layer Removal

Investigation of GaAlAs Photocathode with Nanostructures Sensitive to Narrow Band 532 Nm Wavelength

Back-illuminated 64×1 Solar-blind Linear FPA of Alx Ga1-x N Photodetector

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Linear array of charge sensitive infrared phototransistors for long wavelength infrared detection

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

A low-noise 15-μm pixel-pitch 640×512 hybrid InGaAs image sensor for night vision

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

InGaAs PIN Photodetectors Integrated on Silicon-on-insulator Waveguides