Epitaxial Growth Of Bi2s3 Nanowires On Bivo4 Nanostructures For Enhancing Photoelectrochemical Performance

Canjun Liu,Jie Li,Yaomin Li,Wenzhang Li,Yahui Yang,Qiyuan Chen
DOI: https://doi.org/10.1039/c5ra13171e
IF: 4.036
2015-01-01
RSC Advances
Abstract:In this paper, a novel Bi2S3/BiVO4 heterojunction film was prepared by a facile drop-casting and hydrothermal method for the first time. The as-prepared films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and ultraviolet visible spectrometry (UV-Vis). Interestingly, the heterojunction film was formed by epitaxial growth of Bi2S3 nanowires on BiVO4 nanostructures and exhibited a good visible light absorption performance. Photoelectrochemical (PEC) hydrogen generation was demonstrated using the prepared films as photoanodes. The heterojunction photoelectrode showed an excellent PEC activity and generated a photocurrent density of 7.81 mA cm(-2) at 0.9761 V vs. RHE (0.1 V vs. Ag/AgCl) in the electrolyte solution containing 0.35 M Na2SO3 and 0.25 M Na2S. The present study provides new insight into the design of highly efficient heterojunction photoelectrodes for hydrogen generation.
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