Abstract:The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.

Ultrafast Relaxation of Excited Dirac Fermions in Epitaxial Graphene

Interlayer Thermal Coupling of Hot Dirac Fermions in Epitaxial Graphene

Hot Dirac Fermions in Epitaxial Graphene

Ultrafast Dynamics and Interlayer Thermal Coupling of Hot Carriers in Epitaxial Graphene

Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene

Competition Pathways of Energy Relaxation of Hot Electrons Through Coupling with Optical, Surface, and Acoustic Phonons

Broadband Electromagnetic Response and Ultrafast Dynamics of Few-Layer Epitaxial Graphene

Ultrafast terahertz studies of dirac fermion dynamics in graphene

THz Carrier Dynamics in Epitaxial Graphene

Ultrafast THz Response of Few-Layer Epitaxial Graphene

Ultrafast terahertz dynamics and broadband optical conductivity of few-layer epitaxial graphene

Ultrafast Spectroscopy of Multilayer Epitaxial Graphene

Ultrafast dynamics of spin relaxation in monolayer WSe2 and WSe2/graphene heterojunction

Ultrafast Electron-Optical Phonon Scattering and Quasiparticle Lifetime in Cvd-Grown Graphene

Snapshots of non-equilibrium Dirac carrier distributions in graphene

Ultrafast Hot-Carrier cooling in Quasi Freestanding Bilayer Graphene with Hydrogen Intercalated Atoms

Observation of Ultrafast Interfacial Exciton Formation and Relaxation in Graphene/MoS 2 Heterostructure

Femtosecond UV-pump/visible-probe Measurements of Carrier Dynamics in Stacked Graphene Films

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

Current Relaxation Due to Hot Carrier Scattering in Graphene