Magnetic Properties of Amorphous TbFeCo Films

Y Zhou,CS Yang,D Zhou,XL Zhao
DOI: https://doi.org/10.1117/12.408296
2000-01-01
Abstract:The effects of sputtering conditions on magnetic properties of amorphous TbFeCo films were investigated. By fixing the current set, the sputtering power reduces with the increase of sputtering Ar pressure, and the coercivity increases with the decrease of sputtering power, in contrast to the magnetization decreases. Film deposited at an Ar pressure of 0.42Pa and a sputtering power of 7W develops very goad magnetization loops and high perpendicular anisotropy at room and low temperature. Magnetization measurements show that the in-plane magnetization loop at 10K becomes larger with the increase of saturation magnetic field. This may be caused by the disorder of Tb atoms. At fixed Ar pressure, the coercivity decreases with the increasing sputtering power and the magnetization loop becomes narrow at high sputtering power. The effect of film thickness on magnetization loops is also studied.
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