Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Effect of Single Atom Substitution in Benzochalcogendiazole Acceptors on the Performance of Ternary Memory Devices

Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance

Negative effect on molecular planarity to achieve organic ternary memory: triphenylamine as the spacer

Switching of Resistive Memory Behavior from Binary to Ternary Logic Via Alteration of Substituent Positioning on the Subphthalocyanine Core.

Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Modified Donor End Caps for Binary‐to‐Ternary WORM Memory Conversion in N‐Heteroaromatic Systems

Organic Memory Device and Synaptic Simulation Based on Indacenodithienothiophene (IDTT) Copolymers with Improved Planarity

Donor–acceptor Optoelectronic Molecules Based on Hexa-Peri-hexabenzocoronene and Benzothiadiazole Units: Effect of Different Combinations

Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group

Synthesis, Electrochromic and Non-Volatile Memory Performance of Poly( Triarylamine) Containing Functional Quaternary Ammonium Salt

Rational Design of Quinoline-based D-A System to Accomplish a Switching from Binary to Ternary Memory Devices

Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S 6 2- Relaxation

Exploring the Transformation of Static Random Access Memory to Write-Once-Read-Many-Times Memory Behavior in Imidazole–Triphenylamine-Based Devices

Switching the memory behaviour from binary to ternary by triggering S62− relaxation in polysulfide-bearing zinc–organic complex molecular memories

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance

Conjugated Donor-Acceptor-acceptor (D-A-A) Molecule for Organic Nonvolatile Resistor Memory.

The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices

Exploring the Potential of Malononitrile Functionalized Donor-Acceptor Systems for Non-Volatile Memory Device Applications

Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites

Improved Resistive Switching Performance through Donor-Acceptor Structure Construction in Memristors Based on Covalent Organic Framework Films

Nonvolatile Memory Devices Based on Polyimides Bearing Noncoplanar Twisted Biphenyl Units Containing Carbazole and Triphenylamine Side-Chain Groups