Multiformity and Fluctuation of Cu Ordering in Cu2Se Thermoelectric Materials

Ping Lu,Huili Liu,Xun Yuan,Fangfang Xu,Xun Shi,Kunpeng Zhao,Wujie Qiu,Wenqing Zhang,Lidong Chen

DOI: https://doi.org/10.1039/c4ta07100j

IF: 11.9

2015-01-01

Journal of Materials Chemistry A

Abstract:Ultra-low thermal conductivity resulting from multiformity and fluctuation of Cu ordering in Cu2Se thermoelectric materials.

What problem does this paper attempt to address?

The Order-Disorder Transition in Cu2Se and Medium-Range Ordering in the High-Temperature Phase.

Ping Lu,Wujie Qiu,Yuyu Wei,Chenxi Zhu,Xun Shi,Lidong Chen,Fangfang Xu

DOI: https://doi.org/10.1107/s2052520620002164

2020-01-01

Acta Crystallographica Section B Structural Science Crystal Engineering and Materials

Abstract:The high thermoelectric performance of cuprous selenide (Cu2Se) arises from its specific structures consisting of two independent sublattices, i.e. the rigid face-centered cubic (f.c.c.) Se sublattice and the flexible Cu sublattice showing a variety of ordered configurations at numerous interstitial sites. Upon increasing the temperature, the Cu sublattice undergoes an order-to-disorder transition but the details of the structural evolution have not been fully elucidated. Here, in situ transmission electron microscopy (TEM) is used to investigate the thermally induced structural changes of Cu2Se in both real and reciprocal spaces. Order-disorder transition was found to proceed in nanoblocks accompanied by the structural fluctuations between low-temperature and high-temperature phases. Electron diffraction revealed the emergence of medium-range ordering of Cu atoms in the high-temperature f.c.c. phase. By referring to the Coulomb interaction evaluations, the superstructures for the medium-range ordering were constructed. Such medium-range atomic ordering was sustained over a wide temperature range (from the phase transition temperature to over 800 K in the TEM) but gradually changed to short-range ordering as indicated by the appearance of diffuse scattering rings.
A Self‐Independent Binary‐Sublattice Construction in Cu2Se Thermoelectric Materials

Huijuan Zhao,Haihua Hu,Jing‐Wei Li,Jing‐Feng Li,Jing Zhu

DOI: https://doi.org/10.1002/adfm.202304663

IF: 19

2023-07-09

Advanced Functional Materials

Abstract:The high thermoelectric performance in low‐temperature α‐Cu2Se is speculated to arise from the complex and specific structure, including the fluctuating Cu sublattice and rigid Se sublattice, which can provide pathway for electrons in a long‐range crystalline framework and maintains good electrical transport propertities, while phonons may be frequently scattered by the boundaries and low lattice thermal conductivity is achieved. The atomic‐scale structure of cuprous selenide room temperature phase (α‐Cu2Se), which plays an important role in understanding the mechanism of its high thermoelectric performance, is still not fully determined. Here, direct observation with atomic‐scale resolution is realized to reveal the fine structure of α‐Cu2Se via spherical‐aberration‐corrected scanning transmission electron microscopy. It is observed to be an interesting self‐independent binary‐sublattice construction for Cu and Se in α‐Cu2Se, respectively, which shows a variety of ordered copper fluctuation structures are embedded in a rigid pseudo‐cubic Se sublattice. Ordering of Cu uses a variety of configurations with little energy difference, forming considerable amounts of "boundaries," which may lead to ultrastrong phonon scattering. Furthermore, density functional theory calculations indicate that the electronic structures are mainly determined by the rigid Se face‐centered cubic sublattice and not sensitive to the various copper fluctuations, which may guarantee the electron transfers with large carrier mobility. The self‐independent binary‐sublattice construction is speculated to enhance phonon scattering while still maintaining good electrical transport property. This study provides new critical information for further understanding the possible correlation between the specific structure and thermoelectric performance of α‐Cu2Se, as well as designing new thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

Qingyu Yang,Chen Ming,Pengfei Qiu,Zhengyang Zhou,Xianxiu Qiu,Zhiqiang Gao,Tingting Deng,Lidong Chen,Xun Shi

DOI: https://doi.org/10.1002/smll.202300699

IF: 13.3

2023-02-26

Small

Abstract:AgCuSe-based materials have attracted great attentions recently in thermoelectric (TE) field due to their extremely high electron mobility, ultralow lattice thermal conductivity, and abnormal "brittle-ductile" transition at room temperature. However, although the investigation on the crystal structure of AgCuSe low-temperature phase (named as β-AgCuSe) was started more than half a century before, it is still in controversy yet, which greatly limits the understanding of its intriguing electrical, thermal, and mechanical performance. In this work, via adopting the advanced three-dimensional electron diffraction technique, this study finds that the AgCuSe-based materials crystalize in an incommensurately modulated structure with an orthorhombic Pmmn(0β1/2)s00 superspace group. The local lattice distortion in the incommensurately modulated structure has weak effects on the conduction band minimum due to the delocalized and isotropic feature of Ag 5s states, leading to high carrier mobility. Likewise, the inhomogeneous, weak, and anisotropic Ag-Se bonds result in the high degree of anharmonicity and ultralow lattice thermal conductivity. Furthermore, alloying S in AgCuSe reinforces the interaction between the adjacent Ag-Se layers, yielding the "brittle-ductile" transition at room temperature. This work well interprets the structure-performance relationship of AgCuSe-based materials and sheds light on the future investigation of this class of promising TE materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
An Instant Change of Elastic Lattice Strain during Cu 2 Se Phase Transition: Origin of Abnormal Thermoelectric Properties

Hui Bai,Xianli Su,Dongwang Yang,Qingjie Zhang,Gangjian Tan,Ctirad Uher,Xinfeng Tang,Jinsong Wu

DOI: https://doi.org/10.1002/adfm.202100431

IF: 19

2021-03-08

Advanced Functional Materials

Abstract:The superionic conductor Cu2Se is a promising thermoelectric material due to its low thermal conductivity. An abnormal but clear change in the thermoelectric parameters has been observed during the phase transformation from the ordered and non‐cubic α‐Cu2Se to the disordered and cubic β‐Cu2Se. However, the microstructural origin of the abnormal change and its implications for thermoelectric applications remain largely unknown. Herein, by mimicking the real working conditions of thermoelectrics, the phase transition from α‐ to β‐Cu2Se induced by the rising temperature has been carefully investigated by in situ transmission electron microscopy. It is observed that an abrupt and anisotropic volume‐change in the Se‐sublattice occurs when the temperature is raised to the phase transition point. The abnormal change in the crystalline volume versus temperature, which is caused by the local migration of Cu‐ions, induces an instant and uncommon strain‐field, which reduces the carrier's mobility and increases the electrical resistance. Local migration of Cu‐ions is responsible for a quite low thermal conductivity. Such effects exist only at the instance of the phase transition. Observing the thermoelectric response of the structure during the phase transition may provide insights into the development of high performance thermoelectric materials, which fall beyond the traditional approaches.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Entropy-driven structural transition from tetragonal to cubic phase: High thermoelectric performance of CuCdInSe 3 compound

Tingting Luo,Yihao Hu,Shi Liu,Fanjie Xia,Junhao Qiu,Haoyang Peng,Keke Liu,Quansheng Guo,XingZhong Li,Dongwang Yang,Xianli Su,Jinsong Wu,Xinfeng Tang

DOI: https://doi.org/10.1016/j.mtphys.2023.101211

IF: 11.021

2023-08-24

Materials Today Physics

Abstract:Cu based chalcopyrite is an important class of thermoelectric materials with excellent electronic properties, however, the thermal conductivity is relatively high due to the simple tetragonal structure with highly ordered configuration on cation sites, limiting the thermoelectric performance . Herein, we realize that the modulation of entropy via alloying CdSe achieves the structural transition from tetragonal structure with ordered configuration on cations sites in CuInSe2 compound to cubic CuCdInSe3. CuCdInSe 3 crystallizes in a zinc blende (ZnS) structure where Cu, Cd and In cations randomly occupy the Zn site with the occupancy fraction 1/3. This entropy driven order-disorder transition on the cation site, in conjunction with the intensified point defect phonon scattering via alloying CdSe in CuInSe 2 , dramatically suppress the thermal conductivity. An ultra-low thermal conductivity of 0.76 Wm −1 K −1 at 780 K is achieved for CuCdInSe 3 compound, which is only about 2/3 in comparison with that of CuInSe 2 . CuCdInSe 3 is an indirect semiconductor, with the minimum of conduction band (CBM) located at Γ point and the maximum of valence band (VBM) between Γ and A. The density of states in VBM of CuCdInSe 3 are mainly contributed by the hybridization between Se-4p and Cu-3d orbitals, while that of CBM is dominant by Se-4p and In-5s orbitals. Minute adjustment of Cd content in CuCd (1+x) InSe 3 effectively modulates the carrier concentration and an optimized power factor of 0.58 Wm −1 K −2 is attained at 578 K for CuCd 1.01 InSe 3 , which is 9.6 times as high as the pristine CuCdInSe 3 . The improved electronic properties integrated with the intrinsically low thermal conductivity result in an enhanced thermoelectric figure-of-merit ZT value of 0.45 at 780 K for CuCd 1.005 InSe 3 , which is seven times higher than that of the pristine CuCdInSe 3 .

materials science, multidisciplinary,physics, applied
Structure Family and Polymorphous Phase Transition in the Compounds with Soft Sublattice: Cu2Se As an Example.

Wujie Qiu,Ping Lu,Xun Yuan,Fangfang Xu,Lihua Wu,Xuezhi Ke,Huili Liu,Jiong Yang,Xun Shi,Lidong Chen,Jihui Yang,Wenqing Zhang

DOI: https://doi.org/10.1063/1.4948609

IF: 4.304

2016-01-01

The Journal of Chemical Physics

Abstract:Quite a few interesting but controversial phenomena, such as simple chemical composition but complex structures, well-defined high-temperature cubic structure but intriguing phase transition, coexist in Cu2Se, originating from the relatively rigid Se framework and "soft" Cu sublattice. However, the electrical transport properties are almost uninfluenced by such complex substructures, which make Cu2Se a promising high-performance thermoelectric compound with extremely low thermal conductivity and good power factor. Our work reveals that the crystal structure of Cu2Se at the temperature below the phase-transition point (∼400 K) should have a group of candidate structures that all contain a Se-dominated face-centered-cubic-like layered framework but nearly random site occupancy of atoms from the "soft" Cu sublattice. The energy differences among those structures are very low, implying the coexistence of various structures and thus an intrinsic structure complexity with a Se-based framework. Detailed analyses indicate that observed structures should be a random stacking of those representative structure units. The transition energy barriers between each two of those structures are estimated to be zero, leading to a polymorphous phase transition of Cu2Se at increasing temperature. Those are all consistent with experimental observations.
A Self-Independent Binary-Sublattice Construction in Cu2Se Thermoelectric Materials

Huijuan Zhao,Haihua Hu,Jing-Wei Li,Jing-Feng Li,Jing Zhu

DOI: https://doi.org/10.1002/adfm.202304663

IF: 19

2023-01-01

Advanced Functional Materials

Abstract:The atomic-scale structure of cuprous selenide room temperature phase (& alpha;-Cu2Se), which plays an important role in understanding the mechanism of its high thermoelectric performance, is still not fully determined. Here, direct observation with atomic-scale resolution is realized to reveal the fine structure of & alpha;-Cu2Se via spherical-aberration-corrected scanning transmission electron microscopy. It is observed to be an interesting self-independent binary-sublattice construction for Cu and Se in & alpha;-Cu2Se, respectively, which shows a variety of ordered copper fluctuation structures are embedded in a rigid pseudo-cubic Se sublattice. Ordering of Cu uses a variety of configurations with little energy difference, forming considerable amounts of "boundaries," which may lead to ultrastrong phonon scattering. Furthermore, density functional theory calculations indicate that the electronic structures are mainly determined by the rigid Se face-centered cubic sublattice and not sensitive to the various copper fluctuations, which may guarantee the electron transfers with large carrier mobility. The self-independent binary-sublattice construction is speculated to enhance phonon scattering while still maintaining good electrical transport property. This study provides new critical information for further understanding the possible correlation between the specific structure and thermoelectric performance of & alpha;-Cu2Se, as well as designing new thermoelectric materials.
Thermoelectric Properties of Strained -Cu2Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong

DOI: https://doi.org/10.1021/acsami.1c08686

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In recent years, the high-temperature phase of Cu2Se, namely, beta-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in beta-Cu2Se show a distinct ion-liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized beta-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type beta-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained beta-Cu2Se. The results show that the n-type beta-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type beta-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.
Micromechanism for Copper-Deficiency Enhanced Stability: A Quasi in Situ TEM Study of Electric-Induced Structural Evolution in Cu2-x (S, Se) Liquid-Like Thermoelectric Materials

Xiaoyue Lu,Ping Lu,Yuyu Wei,Chenxi Zhu,Hong Su,Xianxiu Qiu,Sheng Feng,Pengfei Qiu,Xun Shi,Lidong Chen,Fangfang Xu

DOI: https://doi.org/10.1021/acs.nanolett.3c05087

IF: 10.8

2024-01-01

Nano Letters

Abstract:Cu-based liquid-like thermoelectric materials have garnered tremendous attention due to their inherent ultralow lattice thermal conductivity. However, their practical application is hampered by stability issues under a large current or temperature gradient. It has been reported that introduction of copper vacancies can enhance the chemical stability, whereas the micromechanism behind this macroscopic improvement still remains unknown. Here, we have established a quasi in situ TEM method to examine and compare the structural evolution of Cu2-xS0.2Se0.8 (x = 0, 0.05) under external electric fields. It is then found that the preset Cu vacancies could favor the electric-induced formation of a more stable intermediate phase, i.e., the hexagonal CuSe-type structure in the form of either lamellar defects (majorly) or long-range order (minorly), in which ordering of S and Se also occurred. Thereby, copper and chalcogen atoms could largely be solidified into the matrix, and the elemental deposition and evaporation process is mitigated under an electric field.
Low thermal conductivity and high thermoelectric performance in Cu2Se/CuAgSe composite materials

He Yu,Jian Fu,Yi Wu,Xiaowei Zhang,Yu, He

DOI: https://doi.org/10.1007/s10854-024-12113-6

2024-02-24

Journal of Materials Science Materials in Electronics

Abstract:As a typical superionic conductor, Cu 2 Se has attracted much attention in recent years due to its good thermoelectric performance, low toxicity, and high elemental abundance. However, its relatively high thermal conductivity still restricts the further improvement in figure of merit (ZT). Here, we report a facile synthesis of CuAgSe/Cu 2 Se composite ceramics to optimize the thermoelectric properties. Consequently, the thermal conductivity of the composite ceramics is greatly reduced due to the intrinsic low thermal conductivity of CuAgSe and the porous structures of the composites. Introducing a moderate amount CuAgSe can reduce the thermal conductivity to one-third of the value of pure Cu 2 Se, while the corresponding power factor (PF) remains unchanged. Ultimately, the CuAgSe/Cu 2 Se composite ceramics presented a good thermoelectric properties with a ZT value of 1.43 at 900 K. This work provides a simple and effective strategy to optimize Cu 2 Se-based materials thermoelectric performance, which also are helpful to the optimization design of other thermoelectric systems.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen

DOI: https://doi.org/10.48550/arXiv.2006.06260

2020-06-11

Materials Science

Abstract:Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.
Electronic origin of the enhanced thermoelectric efficiency of Cu2Se

Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen

DOI: https://doi.org/10.1016/j.scib.2020.07.007

IF: 18.9

2020-11-01

Science Bulletin

Abstract:Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.

multidisciplinary sciences
Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Jincheng Yu,Xiaodong Liu,Haihua Hu,Yilin Jiang,Hua-Lu Zhuang,Hezhang Li,Bin Su,Jing-Wei Li,Zhanran Han,Zhengqin Wang,Lu Chen,Kei Hayashi,Yuzuru Miyazaki,B. Layla Mehdi,Jing-Feng Li

DOI: https://doi.org/10.1016/j.joule.2024.06.007

IF: 46.048

2024-01-01

Joule

Abstract:Cu2Se is a promising p-type thermoelectric material for energy harvesting due to its intrinsically low thermal conductivity arising from the liquid-like Cu ions, leaving very limited room for regulation of phonon propagation. Herein, the thermal conductivity of superionic Cu2Se is efficiently mediated by titanium oxide nanoclusters, leading to an exceptionally high thermoelectric figure of merit (ZT) at high temperatures. By controlling the oxygen deficiency, the sophisticated TiO2-n architectures can be constructed with optimized phase composition and electrical properties. The presence of p-n junctions helps to reduce carrier concentration without degrading mobility, and the complex heterogeneous interfaces generated by TiO2-n nanoclusters give rise to huge interfacial thermal resistance. Benefiting from the suppressed electrical transport and enhanced phonon scattering, the total thermal conductivity shows a reduction of at least 36%, contributing to a high ZT value of 2.8 at 973 K. This work demonstrates a paradigm of modulating thermal transport through the self-assembly design.
Multiple Phase Transitions and Structural Oscillations in Thermoelectric Cu2S at Elevating Temperatures

Jialin Duan,Chenxi Zhu,Mengjia Guan,Ping Lu,Ying He,Zhengqian Fu,Linlin Zhang,Fangfang Xu,Xun Shi,Lidong Chen

DOI: https://doi.org/10.1016/j.ceramint.2018.04.127

IF: 5.532

2018-01-01

Ceramics International

Abstract:The intrinsic ultra-low lattice thermal conductivity (κL) of high performance thermoelectric Cu2S may arise from its multiform complex crystal structures while the further sharp drop of κL observed at elevating temperatures close to the phase transition to hexagonal high-chalcocite is of considerable interest. In this work, in-depth in-situ transmission electron microscopy investigations have been performed by either heating or electron irradiation to analyze the structural evolution of Cu2S. Multiple including new phase structures have been observed in Cu2S. Upon increasing the temperature, drastic structural changes took place including phase transition among different phases, formation of an intermediate phase, switching of crystal orientation and inverse phase transitions, which indicate multiple forms of Cu ordering with high temperature-sensitivity. Such tremendous structural evolution along with formation and movement of phase boundaries are believed to strongly scatter the phonons.
Phase Transition Behaviors and Thermoelectric Properties of CuAgTe 1– x Se x near 400 K

Xianxiu Qiu,Pengfei Qiu,Zhongmou Yue,Hongyi Chen,Tingting Deng,Jie Xiao,Dudi Ren,Zhengyang Zhou,Lidong Chen,Xun Shi

DOI: https://doi.org/10.1021/acsami.1c20333

2021-12-24

Abstract:Phase transition is an effective strategy to engineer thermal conductivity and electrical transports. Recently, p-type CuAgTe1-xSex materials were reported to show excellent thermoelectric performance at 300-450 K, but the data are controversial due to the cooccurrence of phase transition in this temperature range. Accurately measuring and analyzing the electrical and thermal transport properties in the narrow phase transition temperature range is a quite challenging task. In this work, we systemically investigate the phase transition behavior, and electrical and thermal transport properties of p-type CuAgTe1-xSex (x = 0.3, 0.4, and 0.5) near 400 K. CuAgTe1-xSex (x = 0.3, 0.4, and 0.5) materials show similar phase transition temperatures but quite different phase transition speeds. The phase transition has a weak influence on the electrical transport properties of CuAgTe0.7Se0.3 and CuAgTe0.6Se0.4, but a strong influence on those of CuAgTe0.5Se0.5. Likewise, an obvious underestimation of thermal diffusivity, with a maximum deviation about 20% off the real value, is observed during the phase transition temperature range for CuAgTe1-xSex. Finally, CuAgTe0.7Se0.3 shows a peak zT around 0.9 at 390 K. The present study proves that CuAgTe1-xSex solid solutions are one kind of promising near-room-temperature thermoelectric material.

materials science, multidisciplinary,nanoscience & nanotechnology
Diverse lattice dynamics in ternary Cu-Sb-Se compounds

Wujie Qiu,Lihua Wu,Xuezhi Ke,Jihui Yang,Wenqing Zhang

DOI: https://doi.org/10.1038/srep13643

2015-09-02

Abstract:Searching and designing materials with extremely low lattice thermal conductivity (LTC) has attracted considerable attention in material sciences. Here we systematically demonstrate the diverse lattice dynamics of the ternary Cu-Sb-Se compounds due to the different chemical-bond environments. For Cu3SbSe4 and CuSbSe2, the chemical bond strength is nearly equally distributed in crystalline bulk, and all the atoms are constrained to be around their equilibrium positions. Their thermal transport behaviors are well interpreted by the perturbative phonon-phonon interactions. While for Cu3SbSe3 with obvious chemical-bond hierarchy, one type of atoms is weakly bonded with surrounding atoms, which leads the structure to the part-crystalline state. The part-crystalline state makes a great contribution to the reduction of thermal conductivity that can only be effectively described by including a rattling-like scattering process in addition to the perturbative method. Current results may inspire new approaches to designing materials with low lattice thermal conductivities for high-performance thermoelectric conversion and thermal barrier coatings.
Anomalous Transport and Thermoelectric Performances of CuAgSe Compounds

A. J. Hong,T. Li,H. X. Zhu,X. H. Zhou,Q. Y. He,W. S. Liu,Z. B. Yan,J. -M. Liu,Z. F. Ren

DOI: https://doi.org/10.1016/j.ssi.2014.03.025

IF: 3.699

2014-01-01

Solid State Ionics

Abstract:Copper silver selenide has two phases: low-temperature semimetal phase (α-CuAgSe) and high-temperature phonon-glass superionic phase (β-CuAgSe). In this work, the electric transport and thermoelectric properties of the two phases are investigated. It is revealed that β-CuAgSe is a p-type semiconductor and exhibits low thermal conductivity while α-CuAgSe shows metallic conduction with dominant n-type carriers and low electrical resistivity. The thermoelectric figure of merit zT of the polycrystalline β-CuAgSe at 623K is ~0.95, suggesting that superionic CuAgSe can be a promising thermoelectric candidate in the intermediate temperature range.
Compositionally Tailored Order-Disorder of Cation-Anion Sublattices in Cu2Te1-xSx Solid Solution Thermoelectric Materials

Hong Su,Ping Lu,Chenxi Zhu,Wujie Qiu,Xianxiu Qiu,Kunpeng Zhao,Xiaoyue Lu,Yuyu Wei,Xun Shi,Lidong Chen,Fangfang Xu

DOI: https://doi.org/10.1016/j.actamat.2023.118764

IF: 9.4

2023-01-01

Acta Materialia

Abstract:High performance thermoelectric Cu2Te1-xSx solid solutions can surprisingly be formed over a wide composi-tional range even with big atomic size difference between S and Te. The Cu sublattice has been found to be partially ordered and even shows amorphous substructures in some compositions, while S/Te is considered to form a chemically disordered yet crystalline sublattice. However, precise order-disorder configurations of cation-anion sublattices and their evolution upon compositional change still remain unclear. Meanwhile, the appear-ance of diffuse reflections on the electron diffraction patterns suggests occurrence of short-range order whose structures are not yet solved. Here, atomic structures of Cu2Te1-xSx (x = 0.1, 0.2, 0.4, 0.5, 0.6 and 0.8) have been investigated by transmission electron microscopy in both real and reciprocal spaces. The high-angle annular dark field atomic imaging indicates an approximate hexagonal stacking for S/Te atoms in all solution compositions. However, location of Cu atoms in numerous interstices of the chalcogen sublattice varies by S/Te atomic ratio, leading to change in order-disorder configurations of Cu or even nanoscale phase separation. Diffuse scattering with different geometries are identified to arise from chemical short-range order in forms of sulphur-rich atomic layers on (0001) and lath-like tellurium aggregation on {10-10}. The as-observed compositionally tailored solid solution structures and short-range order structures are found to be strongly correlated to the electron and phonon transportation in Cu2Te1-xSx. The present work indicates a promising strategy for designing solid solu-tions having large atomic-size mismatch which may generate abundant order/disorder atomic configurations hence greatly improve the thermoelectric properties.
Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Jing Jiang,Chengcheng Yang,Yi Niu,Jie Song,Chao Wang

DOI: https://doi.org/10.1021/acsami.1c08886

2021-07-30

Abstract:Liquid-like copper selenium compounds have attracted considerable interest in recent years for their excellent thermoelectric performance, abundant element reserves, and low toxicity. However, the related applications are still limited due to the phase transition and precipitation of Cu under an external field. Here, the cubic Cu1.85Se-based compounds with suppressed phase transition and improved critical voltage (Vc) are first studied. In particular, Li/Bi co-doping effectively optimizes hole concentration and the ZTs are substantially improved from 0.2 in Cu1.85Se to 0.7 in Li0.03Cu1.81Bi0.04Se at 760 K. Meanwhile, the latter shows an outstanding Vc above 0.22 V at 750 K, which is the highest value in Cu2–xSe thermoelectric compounds to date. Moreover, S is alloyed in Li0.03Cu1.81Bi0.04Se to greatly reduce the thermal conductivity and the ZT is further enhanced to 0.9 for Li0.03Cu1.81Bi0.04Se0.9S0.1 at 760 K. Our work sheds light on a new strategy to realize good stability and enhanced thermoelectric performance, which provides a new direction for further research.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c08886.Temperature dependence of the thermoelectric properties of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD patterns of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD pattern of Li0.04Cu1.81Bi0.04Se and thermoelectric properties of LixCu1.85Se (x = 0, 0.01, 0.02, 0.03, 0.04); XPS spectra of Li0.03Cu1.81Bi0.04Se; high-temperature XRD patterns of Cu1.85Se and Li0.03Cu1.85Se; TGA analysis of Cu1.85Se and Li0.03Cu1.85Se; temperature dependence of Cu1.85–xSnxSe (x = 0, 0.01, 0.02, 0.03); temperature-dependent thermoelectric properties of Cu1.85–xBixSe (x = 0, 0.01, 0.02, 0.03, 0.04); temperature dependence of electrical thermal conductivity of LixCu1.85–xSe (x = 0, 0.01, 0.02, 0.03) and Li0.03Cu1.85–yBiySe (y = 0.02, 0.03, 0.04, 0.05); detailed calculation process of lattice thermal conductivity; high stability and reproducibility of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se; temperature dependence of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3); and temperature dependence of the electrical thermal conductivity for Cu1.85Se, Li0.03Cu1.85Se and Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3) (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Vacancy Cluster-Induced Local Disordered Structure For The Enhancement Of Thermoelectric Property In Cu2znsnse4

Zhou Li,Weihui Zhang,Bingchuan Gu,Chenxi Zhao,Bangjiao Ye,Chong Xiao,Yi Xie

DOI: https://doi.org/10.1039/d0ta09866c

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:Low thermal conductivity is commonly seen in amorphous or disordered systems, in which electrical conductivity is also very low, bringing considerable obstacles to the development of high-performance thermoelectric materials. Present study highlights the vacancy cluster-induced local disordered structure in Cu2ZnSnSe4 for the simultaneous achievement of low thermal conductivity and high electrical conductivity, thereby significantly enhancing its thermoelectric property. Comprehensive evidences from positron annihilation and HRTEM characterizations indicated that the vacancies in cation-deficient (V-Cu, V-Zn, and V-Sn) samples existed as vacancy clusters containing both cation vacancies and intrinsic Se vacancies, which induced the formation of localized disorderly oriented domains. These cation deficiencies contributed to the improved electrical conductivity and power factor of the corresponding Cu2(1-x)Zn1-ySn1-zSe4 samples via an increase in the hole carrier concentration. Moreover, the induced local disordering contributed to further reduced thermal conductivity via stronger phonon scattering. As a result, enhanced ZT performance was achieved in all cation deficient samples. Among them, Sn-deficient Cu2ZnSnSe4 obtained the highest ZT value of 0.44 at 750 K, which was two times larger than that of pristine sample (ZT = 0.14 at 750 K). The cation-anion vacancy cluster and local disordered structure elucidated in the present work open up a new avenue to tackle the entanglement of thermoelectric parameters by proper vacancy modulation.

Multiformity and Fluctuation of Cu Ordering in Cu2Se Thermoelectric Materials

The Order-Disorder Transition in Cu2Se and Medium-Range Ordering in the High-Temperature Phase.

A Self‐Independent Binary‐Sublattice Construction in Cu2Se Thermoelectric Materials

Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

An Instant Change of Elastic Lattice Strain during Cu 2 Se Phase Transition: Origin of Abnormal Thermoelectric Properties

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Thermoelectric Properties of Strained -Cu<sub>2</sub>Se

Micromechanism for Copper-Deficiency Enhanced Stability: A Quasi in Situ TEM Study of Electric-Induced Structural Evolution in Cu2-x (S, Se) Liquid-Like Thermoelectric Materials

Low thermal conductivity and high thermoelectric performance in Cu2Se/CuAgSe composite materials

Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Electronic origin of the enhanced thermoelectric efficiency of Cu2Se

Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Multiple Phase Transitions and Structural Oscillations in Thermoelectric Cu2S at Elevating Temperatures

Phase Transition Behaviors and Thermoelectric Properties of CuAgTe 1– x Se x near 400 K

Diverse lattice dynamics in ternary Cu-Sb-Se compounds

Anomalous Transport and Thermoelectric Performances of CuAgSe Compounds

Compositionally Tailored Order-Disorder of Cation-Anion Sublattices in Cu2Te1-xSx Solid Solution Thermoelectric Materials

Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Vacancy Cluster-Induced Local Disordered Structure For The Enhancement Of Thermoelectric Property In Cu2znsnse4