Abstract: Carbon nanotubes (CNTs) exhibit a great prospect as a nanoscale building block for future nanoelectronics due to their unique one-dimensional nanostructure and properties [1]. To explore their potential in various domains, an essential prerequisite is to build reliable interconnections between the CNTs and the external electrical circuits and mechanical systems. To address this need, various chemical and physical processes have been explored to build such interconnections. For example, Burghard et al. reported “controlled adsorption of CNTs on chemically modified electrodes” for interconnection of CNTs [2,3]. However, a stronger bonding instead of a weak chemical adsorption is mandatory for constructing reliable nanodevices. Ruoff et al. showed that focused electron beam in a scanning electron microscope (SEM) can be used to deposit a small amount of hydrocarbon contamination so as to attach nanotubes on an AFM tip [4, 5]. Such a “spot welding” technique has also been used for connecting CNTs and polysilicon surface electrically and mechanically [6]. Madsen et al. presented an in situ method for highly conductive attachment of multiwalled carbon nanotubes (MWCNTs) onto microelectrodes by depositing a gold–carbon composite using a focused electron beam system [7]. Although robust contacts can be obtained by the these methods, limited access to a focused electron beam system and the small-scale spot-treatment nature prevent their large-scale industrial applications. To meet the needs of future large-scale applications, simpler, less capital intensive and more scalable processes are highly desirable. In this chapter, we introduce a novel ultrasonic nanowelding process, with which one can fabricate reliable bonding between single-wall carbon nanotubes (SWCNTs) and metal electrodes. Contacts formed by the present process are found to have low contact resistance and good long-term stability and mechanical strength. A low resistance of around 15 k Ω for a 1- µm-long metallic SWCNT at room temperature can be achieved. After nanowelding, the effective Schottky barrier height between semiconducting SWCNT and Ti electrode is as low as ~6:6 meV in the ON-state and the barrier width is ~0:9 nm at Vg = 0. The performance of the CNT field-effect transistors (FETs) fabricated by this method has also been demonstrated to have greatly improved.

Nanospot welding of carbon nanotubes using near-field enhancement effect of AFM probe irradiated by optical fiber probe laser

Nanojoint Formation Between Ceramic Titanate Nanowires and Spot Melting of Metal Nanowires with Electron Beam

Nanospot soldering polystyrene nanoparticles with an optical fiber probe laser irradiating a metallic AFM probe based on the near-field enhancement effect.

Nanorobotic Spot Welding by Attogram Precision Metal Deposition from Copper-filled Carbon Nanotubes.

Nano-Welding By Scanning Probe Microscope

Laser-induced Single Point Nanowelding of Silver Nanowires

Welding method for fabricating carbon nanotube probe

Nanoscale Welding of Multi-Walled Carbon Nanotubes by 1064 Nm Fiber Laser

Carbon Nanotube As Probe for Atomic Force Microscope

Nanowelding configuration between carbon nanotubes in axial direction

Optically Controlled Local Nanosoldering of Metal Nanowires

Ultrasonic Nanowelding Technology Between Carbon Nanotubes and Metal Electrodes

Femtosecond Laser-Induced Interconnection of Multi-Walled Carbon Nanotubes

Laser Assisted Welding of Gold Nanowires

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

Laser assisted welding of layered metallic nanostructure

Nanoscale Soldering of Axially Positioned Single-Walled Carbon Nanotubes: A Molecular Dynamics Simulation Study

New Optical Near-Field Nanolithography with Optical Fiber Probe Laser Irradiating Atomic Force Microscopy Probe Tip

Femtosecond Laser Irradiation Of Carbon Nanotubes To Metal Electrodes

Laser nanojoining of copper nanowires

Research on Interface Structure During Nanowelding with Molecular Dynamics and Experimental Method