Abstract:1 Email: mkevin@vpec.vt.edu For power electronic systems operating in the high power region, the conventional semiconductor switches available have been the Silicon Controlled Rectifier (SCR) and the Gate Turn-Off (GTO) thyristor. The SCR has the highest ratings of any semiconductor switch available but cannot be turned off by means of its control terminal. This prevents the use of SCRs in many applications where a switching frequency much higher than the fundamental AC line frequency is necessary in order to reduce filter size or improve performance. The SCR is therefore not suitable to many energy storage systems where high frequency are required such as STATic var COMpensators (STATCOMs) and SMES interfaces. The GTO is essentially an SCR with the ability to be turned off by means of its gate, hence the name. The GTO has traditionally been the only option for high power converters which require forced commutation capabilities. This gives the advantage of higher switching frequency which allows the construction of active filters for the utility and high power DC/DC converters such as needed to interface a SMES coil to the inverter if the common voltage-fed inverter topology is desired. Funded by DOE Energy Storage Systems Program and made use of ERC shared facilities supported by the National Science Foundation under award number EEC-9731677.

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