Abstract:Abstract The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

Quantum Ring Infrared Photodetector Based on Droplet Epitaxy Technique

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Multicolor Photodetector Based on GaAs Quantum Rings Grown by Droplet Epitaxy

Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.

Photodetectors Fabricated from Strain-free GaAs Coupled Quantum Dots

Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Ge Quantum Dot Infrared Photo-Detector

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

Quantum structures for multiband photon detection

A Sensitive Double Quantum Well Infrared Phototransistor

Intermediate-band Material Based on GaAs Quantum Rings for Solar Cells

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Si-based Ge Quantum Dot Infrared Photodetectors

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells