Influence of Annealing Temperature on Stress Impedance Effect of FeCoSiB Films and FeCoSiB/Cu/FeCoSiB Sandwich Layers

ZHANG Wan-li,JIANG Hong-chuan,YANG Guo-ning,PENG Bin,ZHANG Wen-xu,ZHANG Yong-qiang
DOI: https://doi.org/10.3321/j.issn:1001-9731.2005.04.010
2005-01-01
Abstract:In this paper, FeCoSiB films and FeCoSiB/Cu/FeCoSiB sandwich layers were deposited on glass substrates by DC magnetron sputtering. Film magnetic performances were analysed by vibrating sample magnetometer (VSM). Film stress impedance effect was investigated at the frequency range from 200kHz to 10MHz by HP4275A impedance analyzer. The results show that magneto-annealing can improve film stress impedance effect and film soft magnetic performances, and induce magneto-anisotropy. At 10MHz and annealing temperature lower than 300℃, with the increase of annealing temperature, film stress impedance effect was increased. However, when annealing temperature is higher than 300℃, film stress impedance effect is decreased. Compared to FeCoSiB film, FeCoSiB/Cu/FeCoSiB sandwich layer stress impedance effect is improved. At 10MHz and 450mm displace, the stress impedance effect of 300℃ annealed FeCoSiB/Cu/FeCoSiB sandwich layers can reach to 8.3%, but only 1.75% for FeCoSiB films. When analyzing frequency was higher than 4MHz, the influence of analyzing frequency on film stress impedance effect can be ignored. With the decrease of measuring frequency less than 1MHz, film stress impedance effect decreases greatly.
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