Monte Carlo Simulation of Electron Transport in Silicon Carbide
SHEN Jin-peng,GUO Wen-ping,WU Lian-hua,ZHANG Chen,WANG Yong,CHEN Hao,JIANG Jian-jun
DOI: https://doi.org/10.3321/j.issn:1001-9731.2007.04.009
2007-01-01
Abstract:The electron transport properties in 2H-,4H-,and 6H-silicon carbide are investigated numerically with an ensemble Monte Carlo technique.A method of approximate momentum relaxation rate to get the angle of scattering are considered in the simulation to reduce the scattering number.And an innovative method of lookup table is also obtained to calculate free-flying time,compared with the self-scattering method of variable, it can completely eliminate self-scattering,saving a great deal of cpu time.