Abstract:Rotationally resolved spectra of the H3Σu--X3Σg- electronic transition bands of Si2 have been experimentally studied using laser-induced fluorescence in the 380-520 nm range. Si2 molecules are produced in a supersonically expanding planar plasma by discharging a silane/argon gas mixture. In total, 44 bands belonging to the H3Σu--X3Σg- electronic transition system of the most abundant isotopologue 28Si2 are experimentally recorded. With a spectral resolution of ∼0.04 cm-1, the triplet spin-splitting structures in individual rotational transition lines are fully resolved. Detailed analyses on the high-resolution spectra have yielded an accurate determination of spectroscopic constants for both X3Σg- and H3Σu- states. The spin-spin interaction constants for the two triplet states are found to be comparable (λ ≈1.5 cm-1), which may originate from the 3p atomic orbital interaction in the triplet Si2 molecule. The measured isotopologue spectra of 29Si28Si and 30Si28Si indicate that the H3Σu--X3Σg- transition system of 29S28S and 30S28S can be reasonably reproduced by the isotope mass-scaling rule. Spectroscopic parameters, including the Franck-Condon factors, the Einstein coefficients, and the oscillator strengths, are also determined from the experimental results and the Rydberg-Klein-Rees (RKR) calculations. The agreement between the experimentally measured and calculated dispersed fluorescence spectra indicates that the RKR calculations with the molecular constants determined in this work can accurately reproduce the diatomic potentials of both states. These molecular data provide a benchmark in high-level theoretical studies on Si2 and likely other small silicon clusters.

Studies of Energy Levels, Hyperfine Structure, and Transition Probabilities for Neutral Silicon

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Systematic Multi-Configuration Dirac-Fock Calculations of the Kα and Kβ X-ray Spectra of Silicon Ions

Multiconfiguration Dirac-Hartree-Fock calculations of transition energy,hyperfine structure constant and isotope shift of neutral Si isotopes in 3s~23p~2 ~3P_2,~1D_2→3s3p~3 ~3D_3~o transitions

Calculations of energy levels, transition rates, lifetimes and Landé g factors for silicon-like Kr XXIII

MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV

Energy Levels, Oscillator Strengths, Line Strengths, and Transition Probabilities in Si-like Ions of La XLIII, Er LIV, Tm LV, and Yb LVI

Theoretical Study on the Spectroscopic Properties and Line Intensity of Silicon Monosulfide Cation.

Multiconfiguration Dirac–Hartree–Fock Calculations for Intercombination Lines in Silicon-Like Ions

Theoretical Study Of Interesting Fine-Structure Splittings Based On A Scenario For Precise Calculations

Theoretical Calculations of Hyperfine Interactions of the Jahn-Teller Distorted Single Vacancy in Silicon

Consistent Wide-Range Equation of State of Silicon by a Unified First-Principles Method

Theoretical Studies of the Spin Hamiltonian Parameters for Fe0 and Mn– in Silicon Center

K-shell Energy Levels and Radiative Rates for Transitions in Si Ix

Tight-binding Calculation of Ionization Potentials of Small Silicon Clusters

Energy Levels and Transition Probabilities of Quartet Rydberg Series in Boron-Like Silicon

Theoretical Studies on Electron Scattering of S and Si Isotopes

Extensive theoretical study on various low-lying electronic states of silicon monochloride cation including spin-orbit coupling.

Spectroscopy and molecule opacity investigation on excited states of SiS

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

High-Resolution Laser Spectroscopic Survey of the H3Σu--X3Σg- Electronic Transition of Si2.