Structural Stability and Band Gap Tunability of Single-Side Hydrogenated Graphene from First-Principles Calculations

Min Li,Lu Wang,Ningning Yu,Xiaotian Sun,Tingjun Hou,Youyong Li

DOI: https://doi.org/10.1039/c5tc00209e

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Hydrogenation of graphene on one side can efficiently tune the band gap between the visible light and near-infrared regions.

What problem does this paper attempt to address?

Two-dimensional Graphene Heterojunctions: the Tunable Mechanical Properties

Kang Xia,Haifei Zhan,Yuantong Gu

DOI: https://doi.org/10.1016/j.carbon.2015.09.022

IF: 10.9

2015-01-01

Carbon

Abstract:We report the mechanical properties of different two-dimensional carbon heterojunctions (HJs) made from graphene and various stable graphene allotropes, including α-, β-, γ- and 6612-graphyne (GY), and graphdiyne (GDY). It is found that all HJs exhibit a brittle behaviour except the one with α-GY, which however shows a hardening process due to the formation of triple carbon rings. Such hardening process has greatly deferred the failure of the structure. The yielding of the HJs is usually initiated at the interface between graphene and graphene allotropes, and monoatomic carbon rings are normally formed after yielding. By varying the locations of graphene (either in the middle or at the two ends of the HJs), similar mechanical properties have been obtained, suggesting insignificant impacts from location of graphene allotropes. Whereas, changing the types and percentages of the graphene allotropes, the HJs exhibit vastly different mechanical properties. In general, with the increasing graphene percentage, the yield strain decreases and the effective Young's modulus increases. Meanwhile, the yield stress appears irrelevant with the graphene percentage. This study provides a fundamental understanding of the tensile properties of the heterojunctions that are crucial for the design and engineering of their mechanical properties, in order to facilitate their emerging future applications in nanoscale devices, such as flexible/stretchable electronics.
Thermodynamically Stable Single-Side Hydrogenated Graphene

H. J. Xiang,E. J. Kan,Su-Huai Wei,X. G. Gong,M. -H. Whangbo

DOI: https://doi.org/10.1103/physrevb.82.165425

IF: 3.7

2010-01-01

Physical Review B

Abstract:The single-sided hydrogenation of graphene was examined by combining the cluster expansion method with density-functional theory to find that hydrogen atoms prefer to form one-dimensional chains, leading to ripples made up of sp(2) carbon atoms between them. The formation of such novel structures is due to the competition between electronic kinetic energy and elastic strain energy. Surprisingly, the single-sided hydrogenation of graphene is thermodynamically stable at low hydrogen coverage, and some hydrogenated graphenes are semiconducting, similar to graphene nanoribbons. The new single-side hydrogenated graphene structures account for several puzzling experimental observations. In addition, we propose a low-energy single-side fluorinated graphene structure.
Stability of hydrogenated graphene: a first-principles study

ding yi,liu yang,shijie xie,avadh saxena

DOI: https://doi.org/10.1039/c5ra00004a

IF: 4.036

2015-01-01

RSC Advances

Abstract:In order to explain the disagreement between present theoretical and experimental investigations on the stability of hydrogenated graphene, we have systematically studied hydrogenated graphene with different configurations from the consideration of single-side and double-side adsorption using first-principles calculations. Both binding energy and formation energy are calculated to characterize the stability of the system. It is found that single-side hydrogenated graphene is always unstable. However, for double-side hydrogenation, some configurations are stable due to the increased carbon-carbon sp(3) hybridization compared to single-side hydrogenation. Furthermore, it is found that the system is energetically favorable when an equal number of hydrogen atoms are adsorbed on each side of the graphene.
Hydrogenation-controlled band engineering of dumbbell graphene

Yuxuan Song,Mengteng Chen,Xiao Xie,Xiaobiao Liu,Jia Li,François M. Peeters,Linyang Li

DOI: https://doi.org/10.1016/j.nanoen.2024.109763

IF: 17.6

2024-05-25

Nano Energy

Abstract:The stability of the dumbbell structure has been confirmed by previous theory and experiment. Based on first-principles calculations, we proposed hexagonal dumbbell graphene (HDB C 10 ) and rectangular dumbbell graphene (RDB C 10 ) monolayers containing periodically raised C (C R ) atoms. They turn out to have high mobility semiconductor properties. By adsorbing H atoms on these C R atoms, their band structures can be widely tuned from semiconductor to semimetal. When considering adsorption of two/four H atoms on the unit cell of the dumbbell structure, the bandgap can be increased, and isolated flat band structures can be obtained by further adding or removing H atoms. Remarkably, two different Dirac band structures can be found in the HDB/RDB C 10 H 2 -I monolayers. The HDB C 10 H 2 -I shows a Dirac cone with isotropic Fermi velocities, while the RDB C 10 H 2 -I monolayer exhibits a quasi-one-dimensional Dirac nodal line with varying Fermi velocities along the XS path. Tight-binding (TB) models are constructed including nearest neighbor (NN) and next NN hopping in order to understand our DFT results. These TB models are related to the Su-Schrieffer-Heeger model, and are able to explain the tunable topological properties of the RDB C 10 H 2 -I monolayer. They not only are able to explain the different kinds of Fermi velocity, but also can predict the emergence of topological edge states, providing a good platform for research on Dirac fermions. The HDB/RDB C 10 monolayer exhibits more freedom of tunable band structures and more stable hydrogen storage capacity, making it superior to graphene. Finally, possible experimental synthesis paths of these DB monolayers are provided.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical
Single-sided-hydrogenated graphene: Density functional theorypredictions

Bhalchandra S. Pujari,Sergey Gusarov,Michael Brett,Andriy Kovalenko

DOI: https://doi.org/10.48550/arXiv.1102.5744

2011-03-01

Abstract:Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in between the gapless graphene and wide bandgap graphane. We show that its electronic structure and lattice characteristics are substantially different from those of graphene, graphone, or graphane. The lattice parameter and C-C bond length are found to be lengthened by 15% of those of graphene. Our binding energy analysis confirms that such a single sided hydrogenation leads to thermodynamically stable material.

Materials Science,Mesoscale and Nanoscale Physics
Hydrogenation Enabled Scrolling of Graphene

Shuze Zhu,Teng Li

DOI: https://doi.org/10.1088/0022-3727/46/7/075301

2013-01-01

Journal of Physics D Applied Physics

Abstract:Hydrogenation of graphene leads to local bond distortion of each hydrogenated carbon atom. Therefore, programmable hydrogenation of graphene can open up new pathways to controlling the morphology of graphene and therefore enable the exploration of graphene-based unconventional nanomaterials. Using molecular dynamics simulations, we show that single-sided hydrogenation can cause the scrolling of graphene. If a proper size of the graphene is hydrogenated on one side, the graphene can completely scroll up into a carbon nanoscroll (CNS) that remains stable at room temperature. We perform extensive simulations to delineate a diagram in which three types of scrolling behaviour of partially single-sided hydrogenated graphene are identified in the parameter space spanned by the hydrogenation size and the graphene size. Such a diagram can serve as quantitative guidelines that shed important light on a feasible solution to address the challenge of fabricating high-quality CNSs, whose open topology holds promise to enable novel nanodevices.
Modulating the Electronic Structures of Graphene by Controllable Hydrogenation

Zhiqiang Luo,Jingzhi Shang,Sanhua Lim,Dehui Li,Qihua Xiong,Zexiang Shen,Jianyi Lin,Ting Yu

DOI: https://doi.org/10.1063/1.3524217

IF: 4

2010-01-01

Applied Physics Letters

Abstract:The evolution of electronic structures of hydrogenated graphene with different amount of hydrogen (H) coverage was investigated by ultraviolet photoemission spectroscopy and optical absorption spectroscopy. Raman spectroscopy and x-ray photoelectron spectroscopy were used to monitor and evaluate the H coverage. At low H coverage, the sp3 CH bonds embedded within a sp2 C matrix behave as defects in graphene and depress the delocalized π electron system. At high H coverage, two localized π electron states originating from the sp2 C clusters encircled by the sp3 CH matrix appear in the electronic band structures, and an opening of a band gap has been observed.
A Tunable and Sizable Bandgap of a G-C3n4/graphene/g-c3n4 Sandwich Heterostructure: a Van Der Waals Density Functional Study

M. M. Dong,C. He,W. X. Zhang

DOI: https://doi.org/10.1039/c7tc00386b

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:Uniaxial strain can effectively tune the electronic properties of a g-C3N4/SLG/g-C3N4 sandwich heterostructure.
An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,Francisco Guinea,Jose Ángel Silva-Guillén,Shengjun Yuan

DOI: https://doi.org/10.1038/s41524-022-00763-1

IF: 12.256

2022-01-01

npj Computational Materials

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases. In this work, we study heterostructures of TBG and hexagonal boron nitride (hBN) using an atomistic tight-binding model together with semi-classical molecular dynamics to consider relaxation effects. The hBN substrate has significant effects on the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudo-magnetic fields that break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we develop a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics is a powerful tool to study the electronic properties of moiré heterostructures, and to explain experimental results in which the effect of the substrate plays an important role.
Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Yonggang Li,Zhen Zhan,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.109.085118

2024-01-01

Abstract:Ultraflat bands have already been detected in twisted bilayer graphene and twisted bilayer transition-metal dichalcogenides, which provide a platform to investigate strong correlations. In this paper, the electronic properties of twisted trilayer molybdenum disulfide (TTM) are investigated via an accurate tight-binding Hamiltonian. We find that the highest valence bands are derived from the F-point of the constituent monolayer, and they exhibit a graphenelike dispersion or become isolated flat bands that are dependent on the starting stacking arrangements. The lattice relaxation, local deformation, and external fields can significantly tune the electronic structures of TTM. After introducing the spin-orbital coupling effect, we find a spin-valley-layer locking effect at the minimum of the conduction band at the K- and K'-point of the Brillouin zone, which may provide a platform to study optical properties and magnetoelectric effects.
Possible gapless helical edge states in hydrogenated graphene

Yong-Cheng Jiang,Toshikaze Kariyado,Xiao Hu

2023-12-07

Abstract:Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a large band gap about 1 eV. Remarkably, by changing the spatial pattern of the hydrogenation, topologically distinct states can be realized, where the topological nontriviality is detected by $C_2$ parity indices in bulk and confirmed by the existence of gapless edge/interface states as protected by the mirror and sublattice symmetries. The analysis of the wave functions reveals that the helical edge states in hydrogenated graphene with the appropriate design carry pseudospin currents that are reminiscent of the quantum spin Hall effect. Our work shows the potential of hydrogenated graphene in pseudospin-based device applications.

Mesoscale and Nanoscale Physics,Materials Science
Strain engineering on graphene towards tunable and reversible hydrogenation

Zhiping Xu,Kun Xue

DOI: https://doi.org/10.48550/arXiv.0904.2938

2009-04-20

Materials Science

Abstract:Graphene is the extreme material for molecular sensory and hydrogen storage applications because of its two-dimensional geometry and unique structure-property relationship. In this Letter, hydrogenation of graphene is discussed in the extent of intercoupling between mechanical deformation and electronic configuration. Our first principles calculation reveals that the atomic structures, binding energies, mechanical and electronic properties of graphene are significantly modified by the hydrogenation and applied strain. Under an in-plane strain of 10 %, the binding energies of hydrogen on graphene can be improved by 53.89 % and 23.56 % in the symmetric and anti-symmetric phase respectively. Furthermore the instability of symmetrically bound hydrogen atoms under compression suggests a reversible storage approach of hydrogen. In the anti-symmetric phase, the binding of hydrogen breaks the sp2 characteristic of graphene, which can be partly recovered at tensile strain. A charge density based analysis unveils the underline mechanisms. The results reported here offer a way not only to tune the binding of hydrogen on graphene in a controllable and reversible manner, but also to engineer the properties of graphene through a synergistic control through mechanical loads and hydrogen doping.
Tunable Multi-Bands in Twisted Double Bilayer Graphene

Yujian Zhu,Yiwei Chen,Qingxin Li,Yongdao Chen,Yan Huang,Wang Zhu,Dongdong An,Junwei Song,Qikang Gan,Kaiyuan Wang,Lingnan Wei,Qijun Zong,Kenji Watanabe,Takashi Taniguchi,Haolin Wang,Li Huang,Lede Xian,Liang Sun,Geliang Yu,Lei Wang

DOI: https://doi.org/10.1088/2053-1583/ac69bb

IF: 6.861

2022-01-01

2D Materials

Abstract:The bandstructure of a material, playing an important role in its electron transport property, is usually governed by the lattice configuration. Materials with a field-effect tunable band, such as bilayer [1] and rhombohedral trilayer graphene [2, 3], are more flexible for electronic applications. Here, on dual-gated twisted double bilayer graphene (TDBG) samples with small twist angle around 1(circle), we observe vertical electric-field-tunable bandstructures at multiple moire fillings with bandgap values continuously varying from zero to tens of mili-electron volts. Moreover, within the first moire filling on both electron and hole sides, the carrier transport deviates from Fermi liquid behavior, with measured resistivity exhibiting linear temperature dependence between 1.5 K and 50 K. Furthermore, under a vertical magnetic field, the coupling between the two bilayer graphene layers can also be turned on and off by a displacement field. Our results suggest TDBG with small twist angle is a platform for studying the evolution of multiple electric field tunable moire bands and the resulting emergent correlated electronic phases.
Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations

D. W. Boukhvalov,M. I. Katsnelson,A. I. Lichtenstein

DOI: https://doi.org/10.1103/PhysRevB.77.035427

2007-12-28

Abstract:Density functional calculations of electronic structure, total energy, structural distortions, and magnetism for hydrogenated single-layer, bilayer, and multi-layer graphene are performed. It is found that hydrogen-induced magnetism can survives only at very low concentrations of hydrogen (single-atom regime) whereas hydrogen pairs with optimized structure are usually nonmagnetic. Chemisorption energy as a function of hydrogen concentration is calculated, as well as energy barriers for hydrogen binding and release. The results confirm that graphene can be perspective material for hydrogen storage. Difference between hydrogenation of graphene, nanotubes, and bulk graphite is discussed.

Materials Science
Tunable electronic properties of graphene - fully hydrogenated boron nitride heterostructure: A van der Waals density functional study

Wenxue Zhang,M.M. Dong,Tangyuan Li,J.L. Gong,Chaohui He

DOI: https://doi.org/10.1016/j.spmi.2017.03.051

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:The structural and electronic properties of Gr/BN and Gr/H-BN-H heterostructures have been systematically investigated on density functional theory with van der Waals corrections. The results indicate that the band gap of Gr/H-BN-H is about 0.024 eV (without an electric field) and 0.412 eV (with a strong electric field). Moreover, the increase of band gap of Gr/BN and Gr/H-BN-H heterostructures does not lead an obvious drop in their carrier mobility. Meanwhile, Gr/H-BN-H heterostructure has a larger tunable range of band gap and carrier mobility than Gr/BN heterostructure. These electronic properties highlight graphene/BN potential applications in nanodevices with low energy consumption.
Tuning electronic and magnetic properties of graphene by surface modification

Jian Zhou,Miao Miao Wu,Xiao Zhou,Qiang Sun

DOI: https://doi.org/10.1063/1.3225154

IF: 4

2009-09-07

Applied Physics Letters

Abstract:We have demonstrated that the electronic and magnetic properties of graphene sheet can be delicately tuned by surface modification. Applying an external electric field to a fully hydrogenated graphene sheet can unload hydrogen atoms on one side, while keeping the hydrogen atoms on the other side, thus forming a half-hydrogenated graphene sheet, where the unpaired electrons in the unsaturated C sites give rise to magnetic moments, coupled through extended p-p interactions. Furthermore, the electronic structure of the resulting half-hydrogenated graphene sheet can be further tuned by introducing F atoms on the other side, making a nonmagnetic semiconductor with a direct band gap.

physics, applied
Structural stability, tunable electronic and optical properties of two-dimensional WS2 and GaN heterostructure: First-principles calculations

Huabing Shu

DOI: https://doi.org/10.1016/j.mseb.2020.114672

2020-11-01

Abstract:Based on first-principles calculations, we explore the structural, electronic and optical properties of WS2/GaN heterostructure and its response to strain. Calculations reveal that in-plane compressive strain of 1% can cause the structural instability of WS2/GaN heterostructure while the tensile strain can retain the stability of structure. Under the tensile strain of 10%, the direct bandgap of the WS2/GaN heterostructure can be tuned significantly and its type-II nature of band alignment is preserved. The band offsets at the WS2-GaN interface coupled with the interlayer polarized field can effectively reduce the recombination of the photoinduced electron-hole pairs. Also, the increasing biaxial tensile strain can rouse the optical absorption for near-infrared light, widening the light harvesting of the WS2/GaN heterostructure. In addition, vertical strain can also engineer the electronic properties and optical absorption of the WS2/GaN heterostructure by changing the interlayer coupling. These results indicate that the WS2/GaN heterostructure has potential applications in optoelectronics.
Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Erjun Kan,Hao Ren,Fang Wu,Zhenyu Li,Ruifeng Lu,Chuanyun Xiao,Kaiming Deng,Jinlong Yang

DOI: https://doi.org/10.1021/jp2106988

2012-01-01

The Journal of Physical Chemistry C

Abstract:The electronic properties of a graphene–boron nitride (G/BN) bilayer have been carefully investigated by first-principles calculations. We find that the energy gap of graphene is tunable from 0 to 0.55 eV and sensitive to the stacking order and interlayer distances of the G/BN bilayer. By electronic structure analysis and tight-binding simulations, we conclude that the charge redistribution within graphene and charge transfer between graphene and BN layers determine the energy gap of graphene, through modification of the on-site energy difference of carbon p orbitals at two sublattices. On the basis of the revealed mechanism, we also predict how to engineer the band gap of graphene.
Two-dimensional Graphene Superlattice Made with Partial Hydrogenation

Ming Yang,Argo Nurbawono,Chun Zhang,Ariando,Yuan Ping Feng

DOI: https://doi.org/10.1063/1.3425664

2011-05-19

Abstract:Electronic properties of two-dimensional graphene superlattice made with partial hydrogenation were thoroughly studied via Density Functional Tight Binding approach (DFTB) which incorporates the tight-binding method into the density functional formalism. The two-dimensional (2-d) pattern of hydrogen atoms on graphene was found to have great effects on electronic structures of graphene superlattice. In particular, the edges of the 2-d pattern, armchair or zigzag, are essential for the energy band gap opening, and the energy band gap sensitively depends on the shape, size, and the 2-d periodicity of the pattern. Based on these findings, we suggested that the 2-d graphene superlattice may be used in fabricating quantum dots and 2-d heterojunctions on graphene without the need for cutting or etching.

Mesoscale and Nanoscale Physics
Hydrogen-Coverage-Dependent Stark Effect in Bilayer Graphene and Graphene/BN Nanofilms

Tengfei Cao,Xiaohong Zheng,Liangfeng Huang,Penglai Gong,Zhi Zeng

DOI: https://doi.org/10.1021/jp501904j

2014-01-01

The Journal of Physical Chemistry C

Abstract:Hydrogenation and electric field are used to tailor the electronic structures of hybrid graphene/hexagonal boron nitride (Gr/BN) and bilayer graphene (Gr/Gr). Without hydrogen adsorption, the electronic structure of Gr/BN is only slightly affected by the electric field, but energy gaps are induced in Gr/Gr because of the breaking of inversion symmetry. Under partial hydrogenation conditions, more interlayer bonds tend to form in Gr/BN than that in Gr/Gr because of the inherent Coulomb attraction, and a band gap is created in Gr/BN even at low hydrogen coverage. The electronic structures of partially hydrogenated Gr/BN and Gr/Gr are both rather insensitive to the electric fields. Under full hydrogenation conditions, Gr/BN and Gr/Gr evolve into diamond-like nanofilms: Gr/BN-BC (interlayer B-C bonding) and Gr/Gr-CC (C-C bonding). Because of the interface-dipole-induced electric field, the band gap of Gr/BN-BC is rather small compared to that of the Gr/Gr-CC. Depending on the direction of the external electric field, the band gap of Gr/BN-BC is linearly increased or decreased, whereas that of Gr/Gr-CC is only decreased. These electric-field-induced band gap modulations in Gr/BN and Gr/Gr as well as their hydrogenation derivatives are results of the Stark effect; they are dependent on the hydrogen coverage and can be understood in terms of the charge distribution of the valence-band maximum and conduction-band minimum.

Structural Stability and Band Gap Tunability of Single-Side Hydrogenated Graphene from First-Principles Calculations

Two-dimensional Graphene Heterojunctions: the Tunable Mechanical Properties

Thermodynamically Stable Single-Side Hydrogenated Graphene

Stability of hydrogenated graphene: a first-principles study

Hydrogenation-controlled band engineering of dumbbell graphene

Single-sided-hydrogenated graphene: Density functional theorypredictions

Hydrogenation Enabled Scrolling of Graphene

Modulating the Electronic Structures of Graphene by Controllable Hydrogenation

A Tunable and Sizable Bandgap of a G-C3n4/graphene/g-c3n4 Sandwich Heterostructure: a Van Der Waals Density Functional Study

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Possible gapless helical edge states in hydrogenated graphene

Strain engineering on graphene towards tunable and reversible hydrogenation

Tunable Multi-Bands in Twisted Double Bilayer Graphene

Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations

Tunable electronic properties of graphene - fully hydrogenated boron nitride heterostructure: A van der Waals density functional study

Tuning electronic and magnetic properties of graphene by surface modification

Structural stability, tunable electronic and optical properties of two-dimensional WS2 and GaN heterostructure: First-principles calculations

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Two-dimensional Graphene Superlattice Made with Partial Hydrogenation

Hydrogen-Coverage-Dependent Stark Effect in Bilayer Graphene and Graphene/BN Nanofilms