Abstract:The stability of the dumbbell structure has been confirmed by previous theory and experiment. Based on first-principles calculations, we proposed hexagonal dumbbell graphene (HDB C 10 ) and rectangular dumbbell graphene (RDB C 10 ) monolayers containing periodically raised C (C R ) atoms. They turn out to have high mobility semiconductor properties. By adsorbing H atoms on these C R atoms, their band structures can be widely tuned from semiconductor to semimetal. When considering adsorption of two/four H atoms on the unit cell of the dumbbell structure, the bandgap can be increased, and isolated flat band structures can be obtained by further adding or removing H atoms. Remarkably, two different Dirac band structures can be found in the HDB/RDB C 10 H 2 -I monolayers. The HDB C 10 H 2 -I shows a Dirac cone with isotropic Fermi velocities, while the RDB C 10 H 2 -I monolayer exhibits a quasi-one-dimensional Dirac nodal line with varying Fermi velocities along the XS path. Tight-binding (TB) models are constructed including nearest neighbor (NN) and next NN hopping in order to understand our DFT results. These TB models are related to the Su-Schrieffer-Heeger model, and are able to explain the tunable topological properties of the RDB C 10 H 2 -I monolayer. They not only are able to explain the different kinds of Fermi velocity, but also can predict the emergence of topological edge states, providing a good platform for research on Dirac fermions. The HDB/RDB C 10 monolayer exhibits more freedom of tunable band structures and more stable hydrogen storage capacity, making it superior to graphene. Finally, possible experimental synthesis paths of these DB monolayers are provided.

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Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

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Hydrogenation Enabled Scrolling of Graphene

Electronic and Superconducting Properties of Hydrogenated Graphene from First-Principles Calculations

Adsorptions of Hydrogen on Graphene and Other Forms of Carbon Structures: First Principle Calculations

Optical conductivity of hydrogenated graphene from first principles

Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Modeling Electronic Structure and Transport Properties of Graphene with Resonant Scattering Centers

Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations

Electric-Field Control of Giant On/Off Current Ratio in Graphene Through Reversible Hydrogenation

Direct Observation of a Dispersionless Impurity Band in Hydrogenated Graphene

Quantum and Electrochemical Interplays in Hydrogenated Graphene

Direct Observation of Ordered Configurations of Hydrogen Adatoms on Graphene.

Effects of Edge Passivation by Hydrogen on Electronic Structure of Armchair Graphene Nanoribbon and Band Gap Engineering

Hydrogenation-controlled band engineering of dumbbell graphene

Photo-induced free radical modification of graphene.

Strain engineering on graphene towards tunable and reversible hydrogenation

Two-dimensional Graphene Superlattice Made with Partial Hydrogenation

Metal-enhanced hydrogenation of graphene with atomic pattern