Single-Photon Defector At 1550 Nm With Gate-Mode Quenched Ingaas/Inp Avalanche Photodiode

G Wu,C Zhou,X Chen,X Li,H Zeng
DOI: https://doi.org/10.1117/12.520253
2004-01-01
Abstract:In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60degreesC, we obtained the detection efficiency eta higher than 10% and 20% at the dark probability P-d about 1.3 x 10(-5) and 1.6 x 10(-5) per nanosecond, respectively. Also at 100 kHz, we got the best ratio of P-d/eta as 1.7 x 10(-3) per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained P-d/eta as 8.9 x 10(-4) per pulse.
What problem does this paper attempt to address?