Abstract:We study the intrinsic anomalous Hall effect (AHE) in both two-dimensional and bulk Fe3GeTe2 (FGT) van der Waals crystals, where long-range ferromagnetic order has been observed in FGT with thickness down to monolayer. We demonstrate that the FGT with number of layers (n) equal to 2 exhibits the strongest AHE, and the trend of the calculated anomalous Hall conductivity (AHC) per layer with n is roughly consistent with the experimental observations. Such layer dependence of AHE is in sharp contrast to the similar values of magnetic moments for FGT with different thickness. The distribution of Berry curvature and configurations of Fermi lines in the reciprocal space indicate that the interlayer hybridization in bilayer FGT induces great modification of the energy dispersions around the Fermi level, leading to much more occurrence of avoided crossings of Fermi lines near the Brillouin zone boundaries. Despite the much lower value of the AHC in the pristine monolayer FGT, it can be significantly enhanced by electron doping. Our study thus provides an in-depth understanding of the evolution of the AHE and electronic structure of FGT from bulk to monolayer.

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