Epitaxial PbZrxTi1−xO3 Ferroelectric Bilayers with Giant Electromechanical Properties

hsinhui huang,qi zhang,esther huang,ronald maran,osami sakata,yoshitaka ehara,takahisa shiraishi,hiroshi funakubo,p r munroe,nagarajan valanoor

DOI: https://doi.org/10.1002/admi.201500075

IF: 5.4

2015-01-01

Advanced Materials Interfaces

Abstract:Giant electromechanical response viaferroelastic domain switching is achieved in epitaxial (001) ferroelectric tetragonal (T) PbZr0.3Ti0.7O3/rhombohedral (R) PbZr0.55Ti0.45O3 bilayers, grown on La0.67Sr0.33MnO3 buffered SrTiO3 substrates. X-ray diffraction and transmission electron microscopy show that the domain structure of the T films is tuned as a function of its thickness, from a fully a(1)/a(2)-domains (30 nm thick T layer) to a three domain stress-free c/a(1)/c/a(2) polytwin state (100 nm thick T layer). A large switchable polarization is found up to 65 C cm(-2). Quantitative piezoelectric force microscopy reveals enhanced piezoelectric coefficients, with d(33) coefficients ranging from 250 to 350 pm V-1, which is up to seven times higher than the nominal PbZrxTi1-xO3 thin film values. These are attributed to the motion of nanoscale ferroelastic domains. Fatigue testing proves that these domains are reversible and repeatable up to 10(7) cycles. In-situ X-ray synchrotron measurements reveal that the ferroelastic domain switching is promoted by a pulsating strain effect imposed by the R layer. The study reports a fundamental understanding of the origin of giant piezoelectric coefficients in epitaxial ferroelectric bilayers.