Efficient n-doping of MoO3 for improved performance of organic light emitting diodes and polymer solar cells

mingxia wang,wenbo wang,song jin,yuhuan chen,jidong zhang,dashan qin
DOI: https://doi.org/10.1088/0031-8949/90/3/035801
2015-01-01
Physica Scripta
Abstract:N-doped MoO3 by 4,4'-N, N'-dicarbazole-biphenyl (MoO3: CBP, 15: 1 in mass) was applied in an inverted organic light emitting diode (IOLED) and a polymer solar cell (IPSC). A composite anode of 7 nm 15: 1 MoO3: CBP/3 nm MoO3/Al presented markedly increased hole current in the IOLED compared with the conventional anode of 10 nm MoO3/Al, as the 15: 1 MoO3: CBP showed greater conductivity than the neat MoO3 due to the formation of the charge-transfer complex between the CBP and the MoO3; nevertheless, the former composite anode showed slightly increased power conversion efficiency for the IPSC relative to the latter, mostly attributable to the fact that the electron accumulation zone established at the MoO3 side of the MoO3: CBP/MoO3 homointerface limited hole extraction under the short-circuit condition, counteracting the conduction advantage of the 15: 1 MoO3: CBP over the neat MoO3. We provide an easy-to-grasp concept for developing high-performance composite anodes for IOLEDs and IPSCs.
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