Interfacial-scattering–induced enhancement of the anomalous Hall effect in uniform Fe nanocluster-assembled films

j b wang,w b mi,l s wang,d l peng
DOI: https://doi.org/10.1209/0295-5075/109/17012
2015-01-01
Abstract:We report on the cluster size (d) dependence of the anomalous Hall effect (AHE) in uniform Fe nanocluster-assembled films prepared by the plasma-gas-condensation method. In particular, a large enhancement of the AHE is observed at d = 4.3 nm, which is almost four orders of magnitude larger than bulk Fe. The saturated anomalous Hall resistivity (rho(A)(xy)) shows a sharp decrease as d increases from 4.3 to 10.1 nm and a slight decrease with further increasing d to 16.1 nm. Moreover, in double-logarithmic scales, rho(A)(xy) decreases with the increase of longitudinal resistivity (rho(xx)), obeying a new scaling relation of log(rho(A)(xy)/rho(xx)) = a(0) + b(0) log rho(xx), which originates from the interfacial scattering to the AHE and longitudinal resistivity. Copyright (C) EPLA, 2015
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