Hall Effect in the Extremely Large Magnetoresistance Semimetal WTe2

Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson
DOI: https://doi.org/10.1063/1.4935240
IF: 4
2015-01-01
Applied Physics Letters
Abstract:We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron-and hole-type carriers were determined. We observed a sudden increase in the hole density below similar to 160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole "compensation" and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system. (C) 2015 AIP Publishing LLC.
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