Abstract:Measurements of space charge density and trap levels are informative ways to predict failure conditions of insulation materials. The charges are injected from electrodes and penetrate from surface towards deep inside of the insulation material. In order to resist the charge injection, trapping, migration and increase charge recombination, de-trapping and extraction rate, layer (nanocomposite-PI-nanocomposite) sandwich structure samples are used. Two techniques Pulse Electro Acoustic (PEA) and Thermal Stimulated Current (TSC) are combined to characterize space charge behavior and trap levels. Lab-view based program is used to detect the charges density distribution and total charge decay, different peaks of current using TSC technique are used to get activation energy and trap level density. The effects of structural interface (single, double, three layers) and types of nano (Al2O3, SiO2) fillers are analyzed to influence charge accumulation polarity and trap levels. Trap levels are calculated using TSC data as well as total charge decay data. The trap values calculated from both data match each other. Al2O3-PI-Al2O3 sandwich structure showed remarkable improvements to resist accumulation of space charge for longer time. Mostly charges are shallow traps with 1.126eV trap level and recombination rate is higher. In double layer structure in which interface is made up of SiO2 and Al2O3, deep trap level of 1.26 eV and higher trap density is observed. The charges decay is faster in three layer structure than double and single layer structure. It is concluded that the interface formed with different type of nano and structure of insulation, both are an important parameters for manufacturing industry to suppress space charges accumulation and traps.

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