Confinement of excited states in two-dimensional, in-plane, quantum heterostructures
Gwangwoo Kim,Benjamin Huet,Christopher E. Stevens,Kiyoung Jo,Jeng-Yuan Tsai,Saiphaneendra Bachu,Meghan Leger,Seunguk Song,Mahfujur Rahaman,Kyung Yeol Ma,Nicholas R. Glavin,Hyeon Suk Shin,Nasim Alem,Qimin Yan,Joshua R. Hendrickson,Joan M. Redwing,Deep Jariwala
DOI: https://doi.org/10.1038/s41467-024-50653-x
IF: 16.6
2024-07-29
Nature Communications
Abstract:Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe 2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe 2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe 2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe 2 . Finally, single-photon emission (g 2 (0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
multidisciplinary sciences