Abstract:The manipulation of the Rashba spin-splitting is crucial for the development of nanospintronic technology. Here, it is proposed that the Rashba spin-splitting can be turned on and off by reversing electric-field direction. By the first-principles calculations, our proposal is illustrated by a concrete example of Janus monolayer RbKNaBi. The designed RbKNaBi possesses dynamical, thermal, and mechanical stabilities, and is a large-gap quantum spin Hall insulator (QSHI) with Rashba spin-splitting near the Fermi level. A small built-in electric field is predicted due to very small electronegativity difference between the bottom and top atoms, which is very key to switch Rashba spin-splitting through the experimentally available electric field intensity. Due to out-of-plane structural asymmetry, the Janus monolayer has distinctive behaviors by applying external electric field E with the same magnitude but different directions ( z or −z ). Our results reveal that the Rashba energy ( ER ) and Rashba constant ( αR ) are increased by the positive E , while a negative E suppresses the Rashba splitting to disappear, and then appears again. In a certain E region (0.15 V/Å to 0.25 V/Å ), switching Rashba spin-splitting can be achieved by only reversing electric-field direction. Besides, the piezoelectric strain coefficients d11 and d31 (5.52 pm/V and –0.41 pm/V) are predicted, which are higher than or compared with those of many 2D materials. By piezoelectric effect, the strain can also be used to tune Rashba spin-splitting of RbKNaBi. In Janus RbKNaBi monolayer, the combination of piezoelectricity and Rashba spin-splitting with topological insulating phase can promote the integration of various physical phenomena. Moreover, a possible spintronic device is proposed to realize the function of spintronic switch. Our proposed manipulation of the Rashba spin-splitting may make a special contribution to semiconductor spintronics. https://doi.org/10.1103/PhysRevMaterials.7.044604 ©2023 American Physical Society

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