Abstract:Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

Spin Polarization and Fano–Rashba Resonance in Nonmagnetic Graphene

Spin-Dependent Fano Resonance in an Impurity-Doped Graphene Coupled to Ferromagnetic Leads

Symmetries of quantum transport with Rashba spin-orbit: Graphene spintronics

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

Robust Spin-Valley Polarization in Commensurate MoS2 /graphene Heterostructures

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

Enhancing Spin–orbit Coupling in High-Mobility Graphene by Introducing Chiral Space Curvature

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics

Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Magnetotransport Signatures of the Radial Rashba Spin-Orbit Coupling in Proximitized Graphene

Valley Polarized Insulator-Metal Transition and Valley Filtering Effect in Graphene

Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Significant Dzyaloshinskii–Moriya Interaction at Graphene–ferromagnet Interfaces Due to the Rashba Effect

Spin-Orbit Proximity Effect in Graphene

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

A scheme to realize the quantum spin-valley Hall effect in monolayer graphene

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers