Tunable Oxygen Vacancy Configuration by Strain Engineering in Perovskite Ferroelectrics from First-Principles Study

Q. Yang,J. X. Cao,Y. C. Zhou,Y. Zhang,Y. Ma,X. J. Lou
DOI: https://doi.org/10.1063/1.4824215
IF: 4
2013-01-01
Applied Physics Letters
Abstract:Comprehensive first-principle calculations indicate that the oxygen vacancy (VO) configuration of a prototypical perovskite oxide PbTiO3 (PTO) can be tuned by strain engineering. Remarkably, we found that VO located along the c axis (Vc), normally resulting in a polarization-harming tail-to-tail domain configuration in strain-free PTO (Vcud), can be readily tuned to a polarization-harmless head-to-tail domain configuration (Vcsw) by applying an ab-biaxial compressive strain of 3%. Also, VO located in the ab-plane (Vab), another type of polarization-harmless vacancy, can be stabilized by applying a compressive strain of 2%.
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