Abstract:Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent electrical properties. However, unlike the Si/SiO2 system, the loose and defective native oxide of InAs is unable to passivate the channel surface and serve as an efficient isolation layer (IL) in the gate stack. Here, we, for the first time, demonstrate that using a stable dielectric Y2O3 to replace the native oxide IL can effectively passivate the NW surface, isolate the channel surface from high-k HfO2, and improve the electrical properties of InAs NW FETs significantly. First, top-gate devices with Y2O3 IL outperform the devices with native oxide or chemically generated oxide of InAs as the IL, exhibiting a small subthreshold swing (SS) of 77 mV/dec, a large on-off ratio, a high field-effect mobility (μFE) of 1845 cm2/V·s, and an extremely low interface trap density (Dit) of 9.1 × 1011 eV-1 cm-2. Double-gate FETs with Y2O3 IL also show excellent gate control (drain-induced barrier lowering (DIBL) down to 35 mV/V) and a high μFE of 2711 cm2/V·s (the highest in the multigate structure). In addition, InAs NW FETs with Y2O3 IL show greater stability after long-term air exposure than those with native oxide IL, demonstrating retained on-off ratio, DIBL, transconductance, and even smaller SS (from 89 to 77 mV/dec). Finally, the results of low-temperature measurement suggest that Y2O3 IL can effectively improve interface qualities. Our results indicate that Y2O3/HfO2 InAs NW FETs have great potential in digital units of integrated circuits for future nodes. Our strategy for improving the interface between InAs NW and the dielectric layer is also valuable for other III-V NW devices.

Electrical Characteristics Of Field-Effect Transistors Based On Indium Arsenide Nanowire Thinner Than 10nm

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors

Contact Properties of Field-Effect Transistors Based on Indium Arsenide Nanowires Thinner Than 16 Nm

Suppressing the Excess OFF-state Current of Short-Channel InAs Nanowire Field-Effect Transistors by Nanoscale Partial-Gate

Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer.

Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y 2 O 3 Isolation Layer

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

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Improving The Electrical Properties Of Inas Nanowire Field Effect Transistors By Covering Them With Y2o3/Hfo2 Layers

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Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Schottky Barrier Heights at the Interfaces Between Pure-Phase Inas Nanowires and Metal Contacts

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Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices