Enhancement of Perpendicular Magnetic Anisotropy in Co/Ni Multilayers by in Situ Annealing the Ta/Cu Under-Layers

Di Wu,Shaohai Chen,Zongzhi Zhang,B. Ma,Q. Y. Jin

DOI: https://doi.org/10.1063/1.4841695

IF: 4

2013-01-01

Applied Physics Letters

Abstract:The perpendicular magnetic properties of glass/Ta/Cu/[Co/Ni]4/Ta multilayers can be efficiently tuned by in situ pre-annealing the Ta/Cu under-layers at various temperatures (TCu) before the deposition of the Co/Ni stack. As a result of the co-effect of fcc(111) texture and Cu surface roughness, the perpendicular anisotropy Ku and coercivity Hc⊥ exhibit a similar non-monotonous dependence on the TCu, showing minimum values at TCu = 100 °C and maxima at 400 °C for Ku while at 550 °C for Hc⊥. By in situ annealing the under-layers at 550 °C and then post-annealing the whole stack at 250 °C, the Hc⊥ value can be significantly enhanced from 139 Oe up to 620 Oe, which is important for spintronic applications.