Abstract:Passivation technology is crucial for reducing interface defects and impacting the performance of crystalline silicon (c-Si) solar cells. Concurrently, maintaining a thin passivation layer is essential for ensuring efficient carrier transport. With an ultrathin passivated contact structure, both Silicon Heterojunction (SHJ) cells and Tunnel Oxide Passivated Contact (TOPCon) solar cells achieve an efficiency surpassing 26%. To reduce production costs and simplify solar cell manufacturing processes, the rapid development of organic material passivation technology has emerged. However, its widespread industrial production is hindered by environmental safety concerns, such as strong acid corrosion and biological and ecological safety issues. Here, we discovered a low-cost self-assembled monolayer (SAM) hole-selective transport material known as 2PACz ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid) with phosphate groups to form c-Si solar cells for the first time. The ultrathin film of 2PACz with phosphate groups can establish strong and stable P-O-Si bonds on the silicon surface. Meanwhile, like 2PACz, a uniform ultrathin film with a carbazole function group can offer electron-localizing and thus hole-selective properties, which provides ideas for studying dopant-free silicon solar cells. As a result of such interfacial passivation engineering, it plays an important role in repairing porous structures, such as pyramid-textured silicon surfaces, and cutting losses during the commercialization of c-Si solar cells. Crucially, this advancement offers insights for the development of new high-efficiency ultrathin film passivation methods in the postsilicon era.

Silicon Surface Passivation by an Organic Overlayer of 9,10-Phenanthrenequinone

Electronic Structure and Band Alignment of 9,10-Phenanthrenequinone Passivated Silicon Surfaces

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

In-situ surface patch-passivation via phosphorus oxygen bond for efficient PbS colloidal quantum dot infrared solar cells

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Ultrathin Self-Assembled Monolayer for Effective Silicon Solar Cell Passivation

Photovoltaic Device Application of a Hydroquinone-Modified Conductive Polymer and Dual-Functional Molecular Si Surface Passivation Technology

High Performance Nanostructured Silicon-Organic Quasi P-N Junction Solar Cells Via Low-Temperature Deposited Hole and Electron Selective Layer.

Synergistic Surface Passivation of CH3NH3PbBr3 Perovskite Quantum Dots with Phosphonic Acid and (3-Aminopropyl)triethoxysilane

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells

Synergetic Passivation of Metal‐Halide Perovskite with Fluorinated Phenmethylammonium Toward Efficient Solar Cells and Modules

Optimizing Surface Passivation of n‐Type Quantum Dots for Efficient PbS Quantum Dot Solar Cells

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Dual Passivation of CsPbI3 Perovskite Nanocrystals with Amino Acid Ligands for Efficient Quantum Dot Solar Cells

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

Merging Passivation in Synthesis Enabling the Lowest Open‐Circuit Voltage Loss for PbS Quantum Dot Solar Cells

Efficient Passivation of Hybrid Perovskite Solar Cells Using Organic Dyes with COOH Functional Group