Abstract:Boron carbide (B4C) is superhard, but its engineering applications are limited by the abnormal brittle failure arising from amorphous shear band formation. Mitigating the local amorphization is essential to improve the ductility of B4C. Here, we carried out ab initio molecular dynamics (AIMD) simulations to examine the response of B4C to shear along two plausible slip systems (001)/[100] and (111)/[112¯] at finite temperature. We found that the icosahedra of B4C gradually deconstruct at finite temperature, resulting in local amorphization, thereby giving rise to a lower stress barrier than that of density functional theory simulations at zero temperature. The deconstruction of the icosahedral clusters arises from the interaction with the neighboring chains. The failure mechanism at the finite temperature suggested that the local amorphization can be suppressed by altering the structure of the 12-atom icosahedron and the 3-atom chain of B4C. To demonstrate this, we replaced the B11CP icosahedron in B4C with B12 icosahedron to form boron-rich boron carbide (B13C2) and then performed the same shear deformations. We found that local amorphization significantly decreases, which results from the modified icosahedral interaction. We also altered the 3-atom C-B-C chain to the 2-atom P-P chain and found that the accumulated shear stress can be released through icosahedral slipping, which is achieved by breaking the chains. The icosahedral slipping then prevents the destruction of icosahedra under shear deformations, expected to improve the ductility. Our results demonstrate two design strategies toward improved ductility of B4C: (1) boron enrichment can alleviate amorphous shear band formation in boron carbide, and (2) altering the 3-atom chain to a 2-atom chain and meanwhile decreasing the strength of the chain to make it less stable than the icosahedron cage may lead to an icosahedral-slipping-dominated mechanism, thereby avoiding icosahedral fracture.

Raman Spectroscopy Of Pressure-Induced Amorphous Boron Carbide

High-pressure deformation and amorphization in boron carbide

Pressure-induced Depolarization and Resonance in Raman Scattering of Single-Crystalline Boron Carbide

Depressurization Amorphization of Single-Crystal Boron Carbide

Mechanism For Amorphization Of Boron Carbide Under Complex Stress Conditions

High-pressure and high-temperature Raman study of cinnabar

Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide.

Structural Stability and Vibrational Characteristics of CaB6 under High Pressure

Pressure-induced Structural Transformation of CaC2.

Raman characterization of boron doped tetrahedral amorphous carbon films

Atomic Structure of Amorphous Shear Bands in Boron Carbide

Comparative High Pressure Raman Study of Boron Nitride Nanotubes and Hexagonal Boron Nitride

Raman Spectroscopy Signatures of Boron-Rich Superhard Materials from Density Functional Theory

Atomistic explanation of shear-induced amorphous band formation in boron carbide

Synthesis, Conductivity and High-Pressure Phase Transition of Amorphous Boron Carbon Nitride

First principles study of post-boron carbide phases with icosahedra broken*

Elastic Properties, Sp3 Fraction, and Raman Scattering in Low and High Pressure Synthesized Diamond-Like Boron Rich Carbides

High-Pressure Behavior of Superconducting Boron-Doped Diamond

Raman Investigation on the Behavior of Parasibirskite CaHBO3 at High Pressure

Local amorphization in boron carbide at finite temperature: Strategies toward improved ductility

Formation, Structure, and Electric Property of CaB4 Single Crystal Synthesized under High Pressure