Phase Change Observed in Ultrathin Ba0.5sr0.5tio3 Films by in Situ Resonant Photoemission Spectroscopy

Y.-H. Lin,K. Terai,H. Wadati,M. Kobayashi,M. Takizawa,J. I. Hwang,A. Fujimori,C.-W. Nan,J.-F. Li,S.-I. Fujimori,T. Okane,Y. Saitoh,K. Kobayashi
DOI: https://doi.org/10.1063/1.2745249
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100) substrates by the pulsed laser deposition technique and were studied by measuring the Ti 2p→3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. The results demonstrated an abrupt variation in the spectral structures between 2.8nm (∼7 ML) and 2.0nm (∼5 ML) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0–2.8nm. This may be ascribed mainly to the intrinsic size effects.
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