Ferromagnetism And Electronic Transport In Epitaxial Ge1-Xfexte Thin Film Grown By Pulsed Laser Deposition

j d liu,x s miao,fengyu tong,wenping luo,z c xia
DOI: https://doi.org/10.1063/1.4795312
IF: 4
2013-01-01
Applied Physics Letters
Abstract:The magnetic and transport behaviors of epitaxial Ge1-xFexTe thin film with low Fe concentration (x = 0.02) deposited by pulsed laser deposition have been investigated. Temperature-dependent magnetization and anomalous Hall effect result in a Curie temperature of similar to 160 K. A high hole density resulting from crystalline defects induces a long-range ferromagnetism. Competition between spontaneous magnetization and thermal effects leads to a change of magnetoresistance ratio from positive to negative with increasing temperature. The minimum carrier concentration is achieved at 160 K, which may correspond to ferromagnetic-paramagnetic phase transition, implying that ferromagnetism is closely related to transport behaviors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795312]
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