Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure
Yuanjun Yang,Zhenlin Luo,Shutong Wang,Wenyu Huang,Guilin Wang,Cangmin Wang,Yingxue Yao,Hongju Li,Zhili Wang,Jingtian Zhou,Yongqi Dong,Yong Guan,Yangchao Tian,Ce Feng,Yonggang Zhao,Chen Gao,Gang Xiao
DOI: https://doi.org/10.1016/j.isci.2021.102734
IF: 5.8
2021-07-01
iScience
Abstract:Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.
multidisciplinary sciences