Abstract:Mechanisms of defect formation near surface ledges of a diamond cubic crystal subjected to compressive strain parallel to the surface are investigated as precursory processes to dislocation nucleation in Si1-xGex/Si(100) heteroepitaxial thin films under surface diffusion conditions. This study is motivated by our preliminary calculations of dislocation formation at surface ledges in a model crystal characterized by the 6–12 Lennard-Jones interatomic potential, and by our controlled annealing experiments on evolution of a Si1-xGex/Si(100) film from an atomically flat, defect-free, surface morphology to an undulating surface morphology with cusp-like surface features and dislocation formation at the cusp valley. When subjecting such films to high temperature anneals, we observed nucleation and growth of three types of dislocations: the 60° glide dislocations, the 90° Lomer-Cottrell dislocations with stair rod Shockley partials and twinned wedge disclinations with twofold ∑9 coincidence boundaries between the wedge and matrix. The objective of this paper is to examine the sequence of atomistic processes which lead to the formation of each of these three types of defects, and in doing so we hope to foster a link between the continuum picture of dislocation nucleation in thin films and the quantum mechanical picture of the unstable collapse of surface ledges due to compressive strain. While we do not actually perform quantum mechanical calculations in this paper, attempts will be made to identify the critical problems that need to be addressed at the quantum mechanics level. Although the present study should be of general interest in the study of dislocation formation near crystal surface ledges, we will confine our discussion to the problem of dislocation formation during stress driven mass transport via surface diffusion in heteroepitaxial thin films which are morphologically unstable under cycloid-like variations in surface shape. The following process is envisioned as undulations form in the film surface. As the curvature at the root of a surface ‘valley’ increases, the local elastic strain magnitude rises as a result of the local geometrical magnification of stress. The strain continues to increase in magnitude as the root sharpens, until atomic ledges collapse to form dislocations. Due to the resulting stress relief, subsequent mass transport reverses its direction of flow and causes such dislocations to be trapped as bulk defects as the film surface moves away from the nucleation sites. Through this mechanism, dislocations can be nucleated without glide by surface trapping in films with even a modest level of nominal compressive mismatch strain.

Atomic-scale study of nucleation of dislocations from fcc–bcc interfaces

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Atomistic survey of grain boundary dislocation interactions in FCC Nickel

New Mechanisms of Helical Dislocation Formation Via the Pinch-off Process Near a Nano-Inhomogeneity

Dislocation Models of Interfacial Shearing Induced by an Approaching Lattice Glide Dislocation

Topology and Evolution of Dislocation Structures Mediated by Glissile Reactions in Face-Centered Cubic Metals

Intergranular fracture, grain-boundary structure, and dislocation-density interactions in FCC bicrystals

A molecular dynamics study of dislocation-interphase boundary interactions in FCC/BCC phase transformation system

Phase Field Modeling of A Glide Dislocation Transmission Across A Coherent Sliding Interface

Elastic Interaction-Induced Anisotropic Growth of Dislocation Loop Arrays

Investigation of Relationships between Dislocations and Crystal Surface Ledges

Dislocation-mediated migration of interphase boundaries

Interaction of Dislocations and Interfaces in Crystalline Heterostructures: A Review of Atomistic Studies

Atomistic Simulations for the Evolution of a U-shaped Dislocation in Fcc Al

Atomistic and Continuum Studies of Diffusional Creep and Associated Dislocation Mechanisms in Thin Films on Substrates

Unravelling the jerky glide of dislocations in body-centred cubic crystals

Theoretical Study of Misfit Dislocation in Interface Dynamics

Atomistic models of dislocation formation at crystal surface ledges in Si<sub>1-x</sub>Ge<sub>x</sub>/Si(100) heteroepitaxial thin films

Atomic scale investigation of interfacial damage initiation in SnPb alloy: structural stability and defect-interface interactions

Molecular dynamics study on the grain boundary dislocation source in nanocrystalline copper under tensile loading

Multiscale computational and experimental analysis of slip-GB reactions: In situ high-resolution electron backscattered diffraction and concurrent atomistic-continuum simulations