Abstract:Half‐Heusler high‐entropy alloys (Zr2Ni2−xFexSnSb; x = 0.30, 0.35, 0.40) are synthesized via arc melting and heat treatment to achieve reduced thermal conductivity through phase separation, grain‐boundary scattering, and electron–phonon interactions. Enhanced phonon scattering leads to a significant improvement in the thermoelectric figure of merit, highlighting their potential for energy conversion applications. Half‐Heusler (hH) compounds are emerging as promising materials for thermoelectric applications, owing to their exceptional mechanical and thermal stability, combined with the absence of toxic elements. These characteristics make hH compounds an attractive subject for detailed study and potential use in advanced thermoelectric systems. However, its thermoelectric applicability is limited because of high lattice thermal conductivity (κl). Various strategies, such as phase separation, grain‐boundary scatterings, and electron–phonon interactions, have been used to reduce κl, which enhances phonon scatterings. Recently, high‐entropy hH alloys have gained significant attention due to their distorted structure that inherently incorporates high phonon scattering features, addressing the key issue of hH. Herein, hH high‐entropy alloys (Zr2Ni2−xFexSnSb; x = 0.30, 0.35, 0.40) have been synthesized by arc melting and heat treatment. A significantly reduced lattice thermal conductivities (<2.25 W mK−1 at 985 K) are obtained due to the presence of multicomponents, which scatter phonon significantly. Experimental observation is very well complimented with density functional theory findings by analyzing phonon dispersions, chemical bonding, group velocities, and anharmonicity. Thereby, it is demonstrated that a high thermoelectric figure of merit is achieved in the proposed hH high‐entropy alloys by strengthening the phonon scatterings.

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Phase Boundary Mapping in ZrNiSn Half-Heusler for Enhanced Thermoelectric Performance

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Thermoelectric Properties and N - to P -Type Conversion of Co-Doped ZrNiSn-Based Half-Heusler Alloys

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P-type Doping of Hf0.6Zr0.4NiSn Half-Heusler Thermoelectric Materials Prepared by Levitation Melting and Spark Plasma Sintering

Demonstration of a phonon-glass electron-crystal strategy in (Hf,Zr)NiSn half-Heusler thermoelectric materials by alloying

Interrelation Between Atomic Switching Disorder and Thermoelectric Properties of Zrnisn Half-Heusler Compounds