Abstract:In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.

Interrelation Between Atomic Switching Disorder and Thermoelectric Properties of Zrnisn Half-Heusler Compounds

Identification of the Intrinsic Atomic Disorder in ZrNiSn-based Alloys and Their Effects on Thermoelectric Properties

The Intrinsic Disorder Related Alloy Scattering in ZrNiSn Half-Heusler Thermoelectric Materials.

Ni Atomic Disorder in ZrNiSn Revealed by Scanning Transmission Electron Microscopy

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study

Preparation and Thermoelectric Properties of Zr1-xTixNiSn0.975Sb0.025 Half-Heusler Alloys

Thermoelectric Properties and N - to P -Type Conversion of Co-Doped ZrNiSn-Based Half-Heusler Alloys

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

Phase Boundary Mapping in ZrNiSn Half-Heusler for Enhanced Thermoelectric Performance

Demonstration of a phonon-glass electron-crystal strategy in (Hf,Zr)NiSn half-Heusler thermoelectric materials by alloying

High performance half-Heusler thermoelectric materials with refined grains and nanoscale precipitates

Suspension melting preparation of Zr1-xTixNiSn0.975Sb0.025 half-heusler alloy and its thermoelectric properties

Beneficial contribution of alloy disorder to electron and phonon transport in half-heusler thermoelectric materials

Reduced Grain Size and Improved Thermoelectric Properties of Melt Spun (hf,zr)nisn Half-Heusler Alloys

Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

Half-Heusler thermoelectric materials: NMR studies

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr x NiSn Synthesized by a Modified Solid-State Reaction

Establishing the Carrier Scattering Phase Diagram for ZrNiSn-based Half-Heusler Thermoelectric Materials

First-principles study of disordered half-Heusler alloys \textit{X}Fe$_{0.5}$Ni$_{0.5}$Sn (\textit{X} = Nb, Ta) as thermoelectric prospects

Identifying the Effect of Ni Solubility on the Thermoelectric Properties of HfNiSn-based Half-Heuslers

Increased Electrical Conductivity In Fine-Grained (Zr,Hf)Nisn Based Thermoelectric Materials With Nanoscale Precipitates